公开(公告)号：US20070120147A1

公开(公告)日：2007-05-31

申请号：US11598551

申请日：2006-11-13

Applicant: Walter Nagy ,  Ricardo Borges ,  Jeffrey Brown ,  Apurva Chaudhari ,  James Cook ,  Allen Hanson ,  Jerry Johnson ,  Kevin Linthicum ,  Edwin Piner ,  Pradeep Rajagopal ,  John Roberts ,  Sameer Singhal ,  Robert Therrien ,  Andrei Vescan

Inventor： Walter Nagy ,  Ricardo Borges ,  Jeffrey Brown ,  Apurva Chaudhari ,  James Cook ,  Allen Hanson ,  Jerry Johnson ,  Kevin Linthicum ,  Edwin Piner ,  Pradeep Rajagopal ,  John Roberts ,  Sameer Singhal ,  Robert Therrien ,  Andrei Vescan

IPC: H01L31/00

CPC classification number: H01L29/812 ,  H01L29/2003 ,  H01L29/7787

Abstract: Gallium nitride material transistors and methods associated with the same are provided. The transistors may be used in power applications by amplifying an input signal to produce an output signal having increased power. The transistors may be designed to transmit the majority of the output signal within a specific transmission channel (defined in terms of frequency), while minimizing transmission in adjacent channels. This ability gives the transistors excellent linearity which results in high signal quality and limits errors in transmitted data. The transistors may be designed to achieve low ACPR values (a measure of excellent linearity), while still operating at high drain efficiencies and/or high output powers. Such properties enable the transistors to be used in RF power applications including third generation (3G) power applications based on W-CDMA modulation.

Abstract translation: 提供了氮化镓材料晶体管和与之相关的方法。 晶体管可以通过放大输入信号来产生具有增加的功率的输出信号在功率应用中使用。 晶体管可以设计成在特定传输信道（以频率定义）的情况下传输大部分输出信号，同时最小化相邻信道中的传输。 这种能力使晶体管具有良好的线性度，导致高信号质量并限制了传输数据中的误差。 晶体管可以设计成实现低ACPR值（优良线性度量），同时仍然以高漏电效率和/或高输出功率工作。 这种特性使晶体管能够用于包括基于W-CDMA调制的第三代（3G）功率应用的射频功率应用中。

公开(公告)号：US20050145851A1

公开(公告)日：2005-07-07

申请号：US10879695

申请日：2004-06-28

Applicant: Jerry Johnson ,  Ricardo Borges ,  Jeffrey Brown ,  James Cook ,  Allen Hanson ,  Edwin Piner ,  Pradeep Rajagopal ,  John Roberts ,  Sameer Singhal ,  Robert Therrien ,  Andrei Vescan

Inventor： Jerry Johnson ,  Ricardo Borges ,  Jeffrey Brown ,  James Cook ,  Allen Hanson ,  Edwin Piner ,  Pradeep Rajagopal ,  John Roberts ,  Sameer Singhal ,  Robert Therrien ,  Andrei Vescan

IPC: H01L21/285 ,  H01L21/329 ,  H01L21/335 ,  H01L29/20 ,  H01L29/872 ,  H01L29/15

CPC classification number: H01L29/7787 ,  H01L21/28587 ,  H01L21/7605 ,  H01L29/2003 ,  H01L29/66212 ,  H01L29/66462 ,  H01L29/872

Abstract: Gallium nitride material structures, including devices, and methods associated with the same are provided. In some embodiments, the structures include one or more isolation regions which electrically isolate adjacent devices. One aspect of the invention is the discovery that the isolation regions also can significantly reduce the leakage current of devices (e.g., transistors) made from the structures, particularly devices that also include a passivating layer formed on a surface of the gallium nitride material. Lower leakage currents can result in increased power densities and operating voltages, amongst other advantages.

Abstract translation: 提供了氮化镓材料结构，包括器件和与其相关的方法。 在一些实施例中，结构包括一个或多个隔离相邻器件的隔离区域。 本发明的一个方面是发现隔离区域还可以显着地减少由结构制成的器件（例如，晶体管）的泄漏电流，特别是还包括形成在氮化镓材料表面上的钝化层的器件。 较低的漏电流可以导致增加的功率密度和工作电压以及其它优点。

公开(公告)号：US20050167775A1

公开(公告)日：2005-08-04

申请号：US10913297

申请日：2004-08-05

Applicant: Walter Nagy ,  Ricardo Borges ,  Jeffrey Brown ,  Apurva Chaudhari ,  James Cook ,  Allen Hanson ,  Jerry Johnson ,  Kevin Linthicum ,  Edwin Piner ,  Pradeep Rajagopal ,  John Roberts ,  Sameer Singhal ,  Robert Therrien ,  Andrei Vescan

Inventor： Walter Nagy ,  Ricardo Borges ,  Jeffrey Brown ,  Apurva Chaudhari ,  James Cook ,  Allen Hanson ,  Jerry Johnson ,  Kevin Linthicum ,  Edwin Piner ,  Pradeep Rajagopal ,  John Roberts ,  Sameer Singhal ,  Robert Therrien ,  Andrei Vescan

IPC: H01L29/15 ,  H01L29/20 ,  H01L29/778 ,  H01L29/812

CPC classification number: H01L29/812 ,  H01L29/2003 ,  H01L29/7787

Abstract: Gallium nitride material transistors and methods associated with the same are provided. The transistors may be used in power applications by amplifying an input signal to produce an output signal having increased power. The transistors may be designed to transmit the majority of the output signal within a specific transmission channel (defined in terms of frequency), while minimizing transmission in adjacent channels. This ability gives the transistors excellent linearity which results in high signal quality and limits errors in transmitted data. The transistors may be designed to achieve low ACPR values (a measure of excellent linearity), while still operating at high drain efficiencies and/or high output powers. Such properties enable the transistors to be used in RF power applications including third generation (3G) power applications based on W-CDMA modulation.

Abstract translation: 提供了氮化镓材料晶体管和与之相关的方法。 晶体管可以通过放大输入信号来产生具有增加的功率的输出信号在功率应用中使用。 晶体管可以设计成在特定传输信道（以频率定义）的情况下传输大部分输出信号，同时最小化相邻信道中的传输。 这种能力使晶体管具有良好的线性度，导致高信号质量并限制了传输数据中的误差。 晶体管可以设计成实现低ACPR值（优良线性度量），同时仍然以高漏电效率和/或高输出功率工作。 这种特性使晶体管能够用于包括基于W-CDMA调制的第三代（3G）功率应用的射频功率应用中。

公开(公告)号：US20180056308A1

公开(公告)日：2018-03-01

申请号：US15684525

申请日：2017-08-23

Applicant: Ricardo Borges

Inventor： Ricardo Borges

IPC: B05B1/18 ,  B05B1/16 ,  B05B15/08 ,  E03C1/04

CPC classification number: B05B1/185 ,  B05B1/16 ,  B05B1/18 ,  B05B15/652 ,  B05B15/656 ,  B05B15/68 ,  E03C1/0408 ,  E03C1/06

Abstract: An adjustable dual showering unit contains a first showerhead assembly, a second showerhead assembly, and a showerhead arm. The first showerhead assembly and the second showerhead assembly extend from the showerhead arm allowing multiple individuals to shower together. The distance between the first showerhead assembly and the second showerhead assembly is adjustable. The distance from the showerhead arm to a head portion of both the first showerhead assembly and the second showerhead assembly is also adjustable. Moreover, the orientation of the head portion of both the first showerhead assembly and the second showerhead assembly can be adjusted. Moreover, a fluid flow control valve allows the user to control the first showerhead assembly independent of the second showerhead assembly of vice versa. Thus, a unique showering experience is provided.

公开(公告)号：US06956250B2

公开(公告)日：2005-10-18

申请号：US09792409

申请日：2001-02-23

Applicant: Ricardo Borges ,  Kevin J. Linthicum ,  T. Warren Weeks ,  Thomas Gehrke

Inventor： Ricardo Borges ,  Kevin J. Linthicum ,  T. Warren Weeks ,  Thomas Gehrke

IPC: H01L23/34 ,  H01L23/373 ,  H01L29/20 ,  H01L33/00 ,  H01L31/0328

CPC classification number: H01L23/3735 ,  H01L29/2003 ,  H01L2924/0002 ,  H01L2924/00

Abstract: The invention includes providing gallium nitride materials including thermally conductive regions and methods to form such materials. The gallium nitride materials may be used to form semiconductor devices. The thermally conductive regions may include heat spreading layers and heat sinks. Heat spreading layers distribute beat generated during device operation over relatively large areas to prevent excessive localized heating. Heat sinks typically are formed at either the backside or topside of the device and facilitate heat dissipation to the environment. It may be preferable for devices to include a heat spreading layer which is connected to a heat sink at the backside of the device. A variety of semiconductor devices may utilize features of the invention including devices on silicon substrates and devices which generate large amounts of heat such as power transistors.

Abstract translation: 本发明包括提供包括导热区域的氮化镓材料和形成这种材料的方法。 氮化镓材料可用于形成半导体器件。 导热区域可以包括散热层和散热片。 热扩散层在比较大的区域中分配在设备操作期间产生的节拍，以防止过度的局部加热。 散热器通常形成在设备的背面或顶部的两侧，并且便于对环境的散热。 对于装置来说，优选地包括连接到装置背面的散热器的散热层。 各种半导体器件可以利用本发明的特征，包括硅衬底上的器件和产生大量热量的器件，例如功率晶体管。

公开(公告)号：US20050127397A1

公开(公告)日：2005-06-16

申请号：US11050598

申请日：2005-02-03

Applicant: Ricardo Borges ,  Kevin Linthicum ,  T. Weeks ,  Thomas Gehrke

Inventor： Ricardo Borges ,  Kevin Linthicum ,  T. Weeks ,  Thomas Gehrke

IPC: H01L23/34 ,  H01L23/373 ,  H01L29/20 ,  H01L33/00 ,  H01L21/00 ,  H01L31/0328 ,  H01L31/0336 ,  H01L31/072 ,  H01L31/109

CPC classification number: H01L23/3735 ,  H01L29/2003 ,  H01L2924/0002 ,  H01L2924/00

Abstract: The invention includes providing gallium nitride materials including thermally conductive regions and methods to form such materials. The gallium nitride materials may be used to form semiconductor devices. The thermally conductive regions may include heat spreading layers and heat sinks. Heat spreading layers distribute heat generated during device operation over relatively large areas to prevent excessive localized heating. Heat sinks typically are formed at either the backside or topside of the device and facilitate heat dissipation to the environment. It may be preferable for devices to include a heat spreading layer which is connected to a heat sink at the backside of the device. A variety of semiconductor devices may utilize features of the invention including devices on silicon substrates and devices which generate large amounts of heat such as power transistors.

Abstract translation: 本发明包括提供包括导热区域的氮化镓材料和形成这种材料的方法。 氮化镓材料可用于形成半导体器件。 导热区域可以包括散热层和散热片。 热扩散层在比较大的区域中分配在设备操作期间产生的热量，以防止过度的局部加热。 散热器通常形成在设备的背面或顶部的两侧，并且便于对环境的散热。 对于装置来说，优选地包括连接到装置背面的散热器的散热层。 各种半导体器件可以利用本发明的特征，包括硅衬底上的器件和产生大量热量的器件，例如功率晶体管。