公开(公告)号：US06531759B2

公开(公告)日：2003-03-11

申请号：US09777540

申请日：2001-02-06

申请人： Richard A. Wachnik ,  Henry A. Nye, III ,  Charles R. Davis ,  Theodore H. Zabel ,  Phillip J. Restle

发明人： Richard A. Wachnik ,  Henry A. Nye, III ,  Charles R. Davis ,  Theodore H. Zabel ,  Phillip J. Restle

IPC分类号： H01L23552

CPC分类号： H01L23/556 ,  H01L24/11 ,  H01L2224/13099 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01022 ,  H01L2924/01024 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01042 ,  H01L2924/01073 ,  H01L2924/01074 ,  H01L2924/01075 ,  H01L2924/01076 ,  H01L2924/01077 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/014 ,  H01L2924/14 ,  H01L2924/30105 ,  H01L2924/30107 ,  H01L2924/3025

摘要： An integrated circuit, comprising: a semiconductor substrate, a plurality of last metal conductors disposed above said substrate, a bottom metallic layer disposed on said last metal conductors, a top metallic layer, and an alpha absorber disposed between said bottom and top metallic layers, said alpha absorber consisting essentially of a high-purity metal which is an alpha-particle absorber. The metal is, for example, of Ta, W, Re, Os or Ir.

公开(公告)号：US06444592B1

公开(公告)日：2002-09-03

申请号：US09597765

申请日：2000-06-20

申请人： Arne W. Ballantine ,  Douglas A. Buchanan ,  Eduard A. Cartier ,  Kevin K. Chan ,  Matthew W. Copel ,  Christopher P. D'Emic ,  Evgeni P. Gousev ,  Fenton Read McFeely ,  Joseph S. Newbury ,  Harald F. Okorn-Schmidt ,  Patrick R. Varekamp ,  Theodore H. Zabel

发明人： Arne W. Ballantine ,  Douglas A. Buchanan ,  Eduard A. Cartier ,  Kevin K. Chan ,  Matthew W. Copel ,  Christopher P. D'Emic ,  Evgeni P. Gousev ,  Fenton Read McFeely ,  Joseph S. Newbury ,  Harald F. Okorn-Schmidt ,  Patrick R. Varekamp ,  Theodore H. Zabel

IPC分类号： H01L21469

CPC分类号： H01L21/31691 ,  H01L28/56

摘要： A method for integrating a high-k material into CMOS processing schemes is provided. The method includes forming an interfacial oxide, oxynitride and/or nitride layer on a device region of a semiconductor substrate, said interfacial layer having a thickness of less than 10 Å; and (b) forming a high-k dielectric material on said interfacial oxide, oxynitride and/or, nitride layer, said high-k dielectric having a dielectric constant, k, of greater than 8.

摘要翻译： 提供了一种将高k材料集成到CMOS处理方案中的方法。 该方法包括在半导体衬底的器件区域上形成界面氧化物，氧氮化物和/或氮化物层，所述界面层的厚度小于10埃; 和（b）在所述界面氧化物，氧氮化物和/或氮化物层上形成高k电介质材料，所述高k电介质的介电常数k大于8。

公开(公告)号：US07183758B2

公开(公告)日：2007-02-27

申请号：US10734694

申请日：2003-12-12

申请人： Carl E. Bohnenkamp ,  Ethan H. Cannon ,  Ethan W. Cascio ,  Michael S. Gordon ,  Kenneth P. Rodbell ,  Theodore H. Zabel

发明人： Carl E. Bohnenkamp ,  Ethan H. Cannon ,  Ethan W. Cascio ,  Michael S. Gordon ,  Kenneth P. Rodbell ,  Theodore H. Zabel

IPC分类号： G01R31/28

CPC分类号： H01L21/68764 ,  H01L21/67213 ,  H01L21/68771

摘要： Issues that are addressed in accordance with at least one presently preferred embodiment of the present invention, are: improvements upon the time it takes to physically swap degraders (done previously by hand); the safety involved in doing so, since the degraders become highly radioactive; possible improved energy resolution and beam stability if the accelerator can be left running continuously; and in-situ monitoring of beam current, beam position and stability. Particularly contemplated are methods and arrangements for changing degraders automatically, not manually, and in a safe manner.

摘要翻译： 根据本发明的至少一个目前优选的实施例解决的问题是：在物理交换降解器（先前由手工完成）所花费的时间上的改进; 这样做的安全性，因为降解物变得高度放射性; 如果加速器可以连续运行，可能改善能量分辨率和光束稳定性; 并对射束电流，光束位置和稳定性进行现场监测。 特别考虑的是自动而不是手动地以安全的方式改变降解器的方法和装置。