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1.发明申请公开(公告)号：US20090179198A1
公开(公告)日：2009-07-16
申请号：US12403685
申请日：2009-03-13
申请人： Richard Kevin Bailey , Graciela Beatriz Blanchet , John W. Catron, JR. , Reid John Chesterfield , Howard David Glicksman , Marc B. Goldfinger , Gary Delmar Jaycox , Lynda Kaye Johnson , Roupen Leon Keusseyan , Irina Malajovich , Hong Meng , Jeffrey Scott Meth , Geoffrey Nunes , Gerard O'Neil , Kenneth George Sharp , Feng Gao
发明人： Richard Kevin Bailey , Graciela Beatriz Blanchet , John W. Catron, JR. , Reid John Chesterfield , Howard David Glicksman , Marc B. Goldfinger , Gary Delmar Jaycox , Lynda Kaye Johnson , Roupen Leon Keusseyan , Irina Malajovich , Hong Meng , Jeffrey Scott Meth , Geoffrey Nunes , Gerard O'Neil , Kenneth George Sharp , Feng Gao
IPC分类号： H01L51/10
CPC分类号： H01L51/052 , H01L51/0013 , H01L51/0035 , H01L51/0052 , H01L51/0068 , H01L51/0541 , H01L51/0545 , H01L51/055 , H01L51/102
摘要： The invention relates to thin film transistors comprising novel dielectric layers and novel electrodes comprising metal compositions that can be provided by a dry thermal transfer process.
摘要翻译： 本发明涉及包括新型电介质层的薄膜晶体管和包含可通过干热转移工艺提供的金属组合物的新型电极。
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2.发明授权公开(公告)号：US07528448B2
公开(公告)日：2009-05-05
申请号：US11488200
申请日：2006-07-17
申请人： Richard Kevin Bailey , Graciela Beatriz Blanchet , John W. Catron, Jr. , Reid John Chesterfield , Howard David Glicksman , Marc B. Goldfinger , Gary Delmar Jaycox , Lynda Kaye Johnson , Roupen Leon Keusseyan , Irina Malajovich , Hong Meng , Jeffrey Scott Meth , Geoffrey Nunes , Gerard O'Neil , Kenneth George Sharp , Feng Gao
发明人： Richard Kevin Bailey , Graciela Beatriz Blanchet , John W. Catron, Jr. , Reid John Chesterfield , Howard David Glicksman , Marc B. Goldfinger , Gary Delmar Jaycox , Lynda Kaye Johnson , Roupen Leon Keusseyan , Irina Malajovich , Hong Meng , Jeffrey Scott Meth , Geoffrey Nunes , Gerard O'Neil , Kenneth George Sharp , Feng Gao
IPC分类号： H01L27/01 , H01L27/12 , H01L31/0392
CPC分类号： H01L51/052 , H01L51/0013 , H01L51/0035 , H01L51/0052 , H01L51/0068 , H01L51/0541 , H01L51/0545 , H01L51/055 , H01L51/102
摘要： The invention relates to thin film transistors comprising novel dielectric layers and novel electrodes comprising metal compositions that can be provided by a dry thermal transfer process.
摘要翻译： 本发明涉及包括新型电介质层的薄膜晶体管和包含可通过干热转移工艺提供的金属组合物的新型电极。
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3.发明申请公开(公告)号：US20080012006A1
公开(公告)日：2008-01-17
申请号：US11488200
申请日：2006-07-17
申请人： Richard Kevin Bailey , Graciela Beatriz Blanchet , John W. Catron , Reid John Chesterfield , Feng Gao , Howard David Glicksman , Marc B. Goldfinger , Gary Delmar Jaycox , Lynda Kaye Johnson , Roupen Leon Keusseyan , Irina Malajovich , Hong Meng , Jeffrey Scott Meth , Gerard O'Neil , Kenneth George Sharp , Nancy G. Tassi , Geoffrey Nunes
发明人： Richard Kevin Bailey , Graciela Beatriz Blanchet , John W. Catron , Reid John Chesterfield , Feng Gao , Howard David Glicksman , Marc B. Goldfinger , Gary Delmar Jaycox , Lynda Kaye Johnson , Roupen Leon Keusseyan , Irina Malajovich , Hong Meng , Jeffrey Scott Meth , Gerard O'Neil , Kenneth George Sharp , Nancy G. Tassi , Geoffrey Nunes
IPC分类号： H01L51/10 , H01L29/786
CPC分类号： H01L51/052 , H01L51/0013 , H01L51/0035 , H01L51/0052 , H01L51/0068 , H01L51/0541 , H01L51/0545 , H01L51/055 , H01L51/102
摘要： The invention relates to thin film transistors comprising novel dielectric layers and novel electrodes comprising metal compositions that can be provided by a dry thermal transfer process.
摘要翻译： 本发明涉及包含新型电介质层的薄膜晶体管和包含可通过干热转移工艺提供的金属组合物的新型电极。
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4.发明授权公开(公告)号：US08053840B2
公开(公告)日：2011-11-08
申请号：US12403685
申请日：2009-03-13
申请人： Richard Kevin Bailey , Graciela Beatriz Blanchet , John W. Catron, Jr. , Reid John Chesterfield , Marc B. Goldfinger , Gary Delmar Jaycox , Lynda Kaye Johnson , Irina Malajovich , Hong Meng , Jeffrey Scott Meth , Kenneth George Sharp , Rinaldo Soria Schiffino , Feng Gao , Gerald Donald Andrews
发明人： Richard Kevin Bailey , Graciela Beatriz Blanchet , John W. Catron, Jr. , Reid John Chesterfield , Marc B. Goldfinger , Gary Delmar Jaycox , Lynda Kaye Johnson , Irina Malajovich , Hong Meng , Jeffrey Scott Meth , Kenneth George Sharp , Rinaldo Soria Schiffino , Feng Gao , Gerald Donald Andrews
CPC分类号： H01L51/052 , H01L51/0013 , H01L51/0035 , H01L51/0052 , H01L51/0068 , H01L51/0541 , H01L51/0545 , H01L51/055 , H01L51/102
摘要： The invention relates to thin film transistors comprising novel dielectric layers and novel electrodes comprising metal compositions that can be provided by a dry thermal transfer process.
摘要翻译： 本发明涉及包括新型电介质层的薄膜晶体管和包含可通过干热转移工艺提供的金属组合物的新型电极。
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公开(公告)号：US20080303425A1
公开(公告)日：2008-12-11
申请号：US12121883
申请日：2008-05-16
申请人： VSEVOLOD ROSTOVTSEV , Hong Meng , Lois Bryman , Jeffrey A. Merlo , Norman Herron , Reid John Chesterfield
发明人： VSEVOLOD ROSTOVTSEV , Hong Meng , Lois Bryman , Jeffrey A. Merlo , Norman Herron , Reid John Chesterfield
IPC分类号： H01L51/52 , C07C211/61
CPC分类号： C09K11/06 , C07C211/61 , C07C255/58 , C07C2603/48 , C07C2603/52 , C09B57/00 , C09K2211/1011 , C09K2211/1014 , H01L51/0039 , H01L51/0043 , H01L51/0054 , H01L51/006 , H01L51/5012 , H05B33/14
摘要： This invention relates to chrysene compounds that are useful in electroluminescent applications and are capable of blue emission. It also relates to electronic devices in which the active layer includes such a chrysene compound.
摘要翻译： 本发明涉及可用于电致发光应用并能够发蓝光的化合物。 它还涉及其中活性层包括这种化合物的电子器件。
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公开(公告)号：US08759818B2
公开(公告)日：2014-06-24
申请号：US12643420
申请日：2009-12-21
申请人： Daniel David LeCloux , Adam Fennimore , Weiying Gao , Nora Sabina Radu , Weishi Wu , Vsevolod Rostovtsev , Michael Henry Howard, Jr. , Hong Meng , Yulong Shen , Jeffrey A. Merlo , Eric Maurice Smith
发明人： Daniel David LeCloux , Adam Fennimore , Weiying Gao , Nora Sabina Radu , Weishi Wu , Vsevolod Rostovtsev , Michael Henry Howard, Jr. , Hong Meng , Yulong Shen , Jeffrey A. Merlo , Eric Maurice Smith
IPC分类号： H01L29/08 , H01L51/00 , C07B59/00 , C07D307/87 , C07C15/28 , C07D209/86 , C07D307/91 , H01L51/50
CPC分类号： H01L51/0058 , C07B59/001 , C07B2200/05 , C07C15/28 , C07C2603/24 , C07D209/86 , C07D307/87 , C07D307/91 , H01L51/0003 , H01L51/0005 , H01L51/0052 , H01L51/006 , H01L51/5024 , H01L51/5036
摘要： This invention relates to deuterated aryl-anthracene compounds that are useful in electronic applications. It also relates to electronic devices in which the active layer includes such a deuterated compound.
摘要翻译： 本发明涉及可用于电子应用的氘代芳基蒽化合物。 它还涉及其中活性层包括这种氘代化合物的电子器件。
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公开(公告)号：US20130240869A1
公开(公告)日：2013-09-19
申请号：US13989579
申请日：2011-12-19
申请人： Kerwin D. Dobbs , Weiying Gao , Norman Herron , Vsevolod Rostovtsev , Weishi Wu , Yulong Shen , Hong Meng
发明人： Kerwin D. Dobbs , Weiying Gao , Norman Herron , Vsevolod Rostovtsev , Weishi Wu , Yulong Shen , Hong Meng
IPC分类号： H01L51/00
CPC分类号： H01L51/0058 , C09B1/00 , C09B57/00 , C09B57/001 , C09B57/008 , C09K11/06 , C09K2211/1007 , C09K2211/1011 , H01L51/0052 , H01L51/006 , H05B33/14
摘要： This invention relates to electroactive compositions including anthracene derivative compounds. It also relates to electronic devices in which at least one active layer includes such a composition.
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公开(公告)号：US20130240868A1
公开(公告)日：2013-09-19
申请号：US13989493
申请日：2011-12-19
申请人： Kerwin D. Dobbs , Weiying Gao , Norman Herron , Vsevolod Rostovtsev , Weishi Wu , Yulong Shen , Hong Meng
发明人： Kerwin D. Dobbs , Weiying Gao , Norman Herron , Vsevolod Rostovtsev , Weishi Wu , Yulong Shen , Hong Meng
IPC分类号： H01L51/00
CPC分类号： H01L51/0058 , H01L51/5012
摘要： This invention relates to electroactive compositions including anthracene derivative compounds. It also relates to electronic devices in which at least one active layer includes such a composition.
摘要翻译： 本发明涉及包含蒽衍生物化合物的电活性组合物。 它还涉及其中至少一个活性层包括这种组合物的电子器件。
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公开(公告)号：US08216753B2
公开(公告)日：2012-07-10
申请号：US12333869
申请日：2008-12-12
申请人： Hong Meng
发明人： Hong Meng
IPC分类号： G03G5/00
CPC分类号： H01L51/0073 , C07D493/04 , C08G61/12 , C08G61/125 , C08G61/126 , C08G2261/3242 , C08G2261/3243 , H01L51/0035 , H01L51/0071 , H01L51/0074
摘要： There is provided an electroactive material having Formula I wherein: Q is the same or different at each occurrence and can be O, S, Se, Te, NR, SO, SO2, or SiR3; R is the same or different at each occurrence and can be hydrogen, alkyl, aryl, alkenyl, or alkynyl; R1 through R8 are the same or different and can be hydrogen, alkyl, aryl, halogen, hydroxyl, aryloxy, alkoxy, alkenyl, alkynyl, amino, alkylthio, phosphino, silyl, —COR, —COOR, —PO3R2, —OPO3R2, or CN.
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10.发明申请公开(公告)号：US20110037056A1
公开(公告)日：2011-02-17
申请号：US12635909
申请日：2009-12-11
申请人： Charles J. Dubois , Weiying Gao , Norman Herron , Hong Meng , Jeffrey A. Merlo , Vsevolod Rostovtsev , Weishi Wu
发明人： Charles J. Dubois , Weiying Gao , Norman Herron , Hong Meng , Jeffrey A. Merlo , Vsevolod Rostovtsev , Weishi Wu
CPC分类号： H01L51/5016 , C09B57/00 , C09B57/008 , C09K11/06 , C09K2211/1007 , C09K2211/1011 , C09K2211/1014 , C09K2211/1029 , C09K2211/1088 , H01L51/0059 , H01L51/006 , H01L51/0072 , H01L51/0085 , H01L2251/5384 , H01L2251/552
摘要： There is provided a photoactive composition including: (a) a first host material having a HOMO energy level shallower than or equal to −5.6 eV and having a Tg greater than 95° C.; (b) a second host material having a LUMO deeper than −2.0 eV; and (c) an electroluminescent dopant material. The weight ratio of first host material to second host material is in the range of 99:1 to 1.5:1.
摘要翻译： 提供了一种光活性组合物，其包括：（a）具有低于或等于-5.6eV且Tg大于95℃的HOMO能级的第一主体材料; （b）具有深度大于-2.0eV的LUMO的第二主体材料; 和（c）电致发光掺杂剂材料。 第一主体材料与第二主体材料的重量比在99:1至1.5:1的范围内。
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