Electrically alterable read only memory semiconductor device made by low
pressure chemical vapor deposition process
    1.
    发明授权
    Electrically alterable read only memory semiconductor device made by low pressure chemical vapor deposition process 失效
    通过低压化学气相沉积工艺制造的电可更改的只读存储器半导体器件

    公开(公告)号:US4330930A

    公开(公告)日:1982-05-25

    申请号:US120741

    申请日:1980-02-12

    CPC分类号: H01L29/792

    摘要: An electrically alterable read only memory (EAROM) having a tunneling layer of an insulating material such as silicon dioxide which is grown on the substrate by thermal oxidation carried out at low pressure and a layer of silicon nitride laid down on the tunneling layer by a low-pressure chemical vapor deposition, the interface of the two layers forming a charge storage area with the EAROM having improved read/write switching capability and quality, and improved reliability and memory retentivity characteristics.

    摘要翻译: 具有通过在低压下进行的热氧化而在衬底上生长的绝缘材料(例如二氧化硅)的隧穿层的电可更换的只读存储器(EAROM)和铺设在隧道层上的氮化硅层低 压力化学气相沉积,两层的界面形成电荷存储区域,EAROM具有改进的读/写切换能力和质量,以及改进的可靠性和记忆保持特性。

    Electrically alterable read only memory semiconductor device made by low
pressure chemical vapor deposition process
    2.
    发明授权
    Electrically alterable read only memory semiconductor device made by low pressure chemical vapor deposition process 失效
    通过低压化学气相沉积工艺制造的电可更改的只读存储器半导体器件

    公开(公告)号:US4456978A

    公开(公告)日:1984-06-26

    申请号:US381704

    申请日:1982-05-25

    IPC分类号: H01L29/792 G11C11/40

    CPC分类号: H01L29/792

    摘要: An electrically alterable read only memory (EAROM) having a tunneling layer of an insulating material such as silicon dioxide which is grown on the substrate by thermal oxidation carried out at low pressure and a layer of silicon nitride laid down on the tunneling layer by a low-pressure chemical vapor deposition, the interface of the two layers forming a charge storage area with the EAROM having improved read/write switching capability and quality, and improved reliability and memory retentivity characteristics.

    摘要翻译: 具有通过在低压下进行的热氧化而在衬底上生长的绝缘材料(例如二氧化硅)的隧穿层的电可更换的只读存储器(EAROM)和铺设在隧道层上的氮化硅层低 压力化学气相沉积,两层的界面形成电荷存储区域,EAROM具有改进的读/写切换能力和质量,以及改进的可靠性和记忆保持特性。

    Removable Card And A Mobile Wireless Communication Device
    3.
    发明申请
    Removable Card And A Mobile Wireless Communication Device 审中-公开
    可拆卸卡和移动无线通信设备

    公开(公告)号:US20090075698A1

    公开(公告)日:2009-03-19

    申请号:US11855846

    申请日:2007-09-14

    IPC分类号: H04B1/38

    摘要: A removable card for use with a mobile wireless communication device has a processor and a non-volatile memory, connected to the processor. The memory has programming code stored configured to be executed by the processor and is operable in one of two modes. In a first mode the card is connected to the device with the card storing information received wirelessly by the device from the Internet. In a second mode the card is connected to a network portal device, which is connected to the Internet, with the card storing information received through the network portal device from the Internet. In another embodiment, the removable card has electrical connections for connecting to a mobile wireless communicating device for use by a user to connect to the Internet. The memory has two portions: a first portion and a second portion with the partitioning being alterable. The processor restricts access to the first portion by the user, while grants access to the second portion to the user. Finally, the present invention relates to a mobile wireless communication device.

    摘要翻译: 用于移动无线通信设备的可拆卸卡具有连接到处理器的处理器和非易失性存储器。 存储器具有被配置为由处理器执行并且可以以两种模式之一操作的存储的编程代码。 在第一模式中,卡被连接到设备,其中卡存储由设备从因特网无线地接收到的信息。 在第二模式中,该卡连接到连接到互联网的网络入口设备,其中卡从存储通过网络入口设备从因特网接收的信息。 在另一个实施例中,可拆卸卡具有用于连接到移动无线通信设备的电连接,供用户使用以连接到因特网。 存储器具有两部分:第一部分和第二部分,其中分割是可改变的。 处理器限制用户对第一部分的访问,同时向用户授予对第二部分的访问。 最后,本发明涉及移动无线通信设备。