Ultra-deep power-down mode for memory devices
    1.
    发明授权
    Ultra-deep power-down mode for memory devices 有权
    用于存储器件的超深度掉电模式

    公开(公告)号:US09037890B2

    公开(公告)日:2015-05-19

    申请号:US13559320

    申请日:2012-07-26

    摘要: A memory device includes a voltage regulator, whose output provides a voltage supply for various other components of the memory device, including a command user interface. The memory device is placed into an ultra-deep power-down mode by providing to the memory device a software command, which causes the output of the voltage regulator to be disabled. To bring the memory device out of the ultra-deep power-down mode, a chip select signal is provided to the memory device, which includes a wake-up circuit that remains powered on even when the memory device is in the ultra-deep power-down mode. Receipt of the chip select signal while the memory device is in the ultra-deep power-down mode causes the output of the voltage regulator to be enabled, thereby providing power to the components that were completely powered down.

    摘要翻译: 存储器件包括电压调节器,其输出为存储器件的各种其他部件提供电压供应,包括命令用户界面。 存储器件通过向存储器件提供软件命令而被置于超深度掉电模式,该命令导致电压调节器的输出被禁止。 为了使存储器件脱离超深度掉电模式,芯片选择信号被提供给存储器件,其包括即使当存储器件处于超深度功率时仍保持通电的唤醒电路 降模式。 当存储器件处于超深度掉电模式时,芯片选择信号的接收使得电压调节器的输出被使能,从而为完全断电的部件提供电力。