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公开(公告)号：US20090310400A1
公开(公告)日：2009-12-17
申请号：US12545379
申请日：2009-08-21
IPC分类号： G11C11/02
CPC分类号： G11C11/16 , G11C8/08 , G11C11/1675 , H01L27/228
摘要： In MRAM using a spin-transfer torque switching, a sufficient writing operation with a small memory cell is realized, and a reading current is enlarged while a reading disturbance is suppressed. In the case where the free layer of the tunnel magneto-resistance element is located on the side of the bit line, using a PMOS transistor, and in the case where the fixed layer of the tunnel magneto-resistance element is located on the side of the bit line, using an NMOS transistor, an anti-parallel writing in a source grounding operation is performed. The reading and writing operation margin is improved by performing a reading operation in an anti-parallel writing direction.
摘要翻译： 在使用自旋转移转矩切换的MRAM中，实现了具有小存储单元的充分的写入操作，并且在读取干扰被抑制的同时增加读取电流。 在隧道磁阻元件的自由层位于位线一侧的情况下，使用PMOS晶体管，并且在隧道磁阻元件的固定层位于 使用NMOS晶体管的位线执行源极接地操作中的反并联写入。 通过执行反并行写入方向的读取操作来提高读取和写入操作余量。
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公开(公告)号：US07738286B2
公开(公告)日：2010-06-15
申请号：US11638379
申请日：2006-12-14
申请人： Kenchi Ito , Hiromasa Takahashi , Takayuki Kawahara , Riichiro Takemura , Thibault Devolder , Paul Crozat , Joo-von Kim , Claude Chappert
发明人： Kenchi Ito , Hiromasa Takahashi , Takayuki Kawahara , Riichiro Takemura , Thibault Devolder , Paul Crozat , Joo-von Kim , Claude Chappert
IPC分类号： G11C11/00
CPC分类号： G11C11/16 , Y10S977/935
摘要： A magnetic memory device comprises a magnetic tunnel junction (MTJ) connecting to a bit line to a sense line through an isolation transistor. The MTJ includes a ferromagnetic layer having a magnetic hard axis. An assist current line overlies the bit line and is insulated from the bit line. The MTJ is switchable between a first, relatively high resistance state and a second, relatively low resistance state. The assist current line applies a magnetic field along the magnetic hard axis in the ferromagnetic layer, independently of current flow through the MTJ for assisting switching of the MTJ between the first and second states.
摘要翻译： 磁存储器件包括通过隔离晶体管连接到感测线的位线的磁性隧道结（MTJ）。 MTJ包括具有磁性硬轴的铁磁层。 辅助电流线覆盖位线并与位线绝缘。 MTJ可以在第一相对高电阻状态和第二相对低电阻状态之间切换。 辅助电流线沿铁磁层中的磁性硬轴施加磁场，独立于通过MTJ的电流流动来辅助MTJ在第一和第二状态之间切换。
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公开(公告)号：US07596014B2
公开(公告)日：2009-09-29
申请号：US11736252
申请日：2007-04-17
IPC分类号： G11C11/00
CPC分类号： H01L27/228 , G11C11/1653 , G11C11/1657 , G11C11/1659 , G11C11/1673 , G11C11/1675 , G11C11/1693
摘要： In a memory using spin transfer torque, state of the spin is made unstable by applying a weak pulse before rewriting to reduce rewrite current. Reading of high-speed operation is performed with current in a regime where the current becomes non-linearly increases corresponding to the pulse width to suppress disturb. Further, fluctuation of respective memory cells is suppressed by a driving method setting the amount of spin constant by bit line charge to suppress read disturb.
摘要翻译： 在使用自旋传递转矩的存储器中，通过在重写之前施加弱脉冲来减小重写电流使自旋状态变得不稳定。 利用电流在电流变得非线性地增加而与脉冲宽度对应的状态下进行高速运行的读取，以抑制干扰。 此外，通过利用位线电荷设定自旋常数的驱动方法来抑制各个存储单元的波动，以抑制读取干扰。
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公开(公告)号：US07593253B2
公开(公告)日：2009-09-22
申请号：US11736088
申请日：2007-04-17
IPC分类号： G11C11/00
CPC分类号： G11C11/16 , G11C8/08 , G11C11/1675 , H01L27/228
摘要： In MRAM using a spin-transfer torque switching, a sufficient writing operation with a small memory cell is realized, and a reading current is enlarged while a reading disturbance is suppressed. In the case where the free layer of the tunnel magneto-resistance element is located on the side of the bit line, using a PMOS transistor, and in the case where the fixed layer of the tunnel magneto-resistance element is located on the side of the bit line, using an NMOS transistor, an anti-parallel writing in a source grounding operation is performed. The reading and writing operation margin is improved by performing a reading operation in an anti-parallel writing direction.
摘要翻译： 在使用自旋转移转矩切换的MRAM中，实现了具有小存储单元的充分的写入操作，并且在读取干扰被抑制的同时增加读取电流。 在隧道磁阻元件的自由层位于位线一侧的情况下，使用PMOS晶体管，并且在隧道磁阻元件的固定层位于 使用NMOS晶体管的位线执行源极接地操作中的反并联写入。 通过执行反并行写入方向的读取操作来提高读取和写入操作余量。
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公开(公告)号：US07778068B2
公开(公告)日：2010-08-17
申请号：US12545363
申请日：2009-08-21
IPC分类号： G11C11/00
CPC分类号： H01L27/228 , G11C11/1653 , G11C11/1657 , G11C11/1659 , G11C11/1673 , G11C11/1675 , G11C11/1693
摘要： In a memory using spin transfer torque, state of the spin is made unstable by applying a weak pulse before rewriting to reduce rewrite current. Reading of high-speed operation is performed with current in a regime where the current becomes non-linearly increases corresponding to the pulse width to suppress disturb. Further, fluctuation of respective memory cells is suppressed by a driving method setting the amount of spin constant by bit line charge to suppress read disturb.
摘要翻译： 在使用自旋传递转矩的存储器中，通过在重写之前施加弱脉冲来减小重写电流使自旋状态变得不稳定。 利用电流在电流变得非线性地增加而与脉冲宽度对应的状态下进行高速运行的读取，以抑制干扰。 此外，通过利用位线电荷设定自旋常数的驱动方法来抑制各个存储单元的波动，以抑制读取干扰。
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公开(公告)号：US20090310399A1
公开(公告)日：2009-12-17
申请号：US12545363
申请日：2009-08-21
CPC分类号： H01L27/228 , G11C11/1653 , G11C11/1657 , G11C11/1659 , G11C11/1673 , G11C11/1675 , G11C11/1693
摘要： In a memory using spin transfer torque, state of the spin is made unstable by applying a weak pulse before rewriting to reduce rewrite current. Reading of high-speed operation is performed with current in a regime where the current becomes non-linearly increases corresponding to the pulse width to suppress disturb. Further, fluctuation of respective memory cells is suppressed by a driving method setting the amount of spin constant by bit line charge to suppress read disturb.
摘要翻译： 在使用自旋传递转矩的存储器中，通过在重写之前施加弱脉冲来减小重写电流使自旋状态变得不稳定。 利用电流在电流变得非线性地增加而与脉冲宽度对应的状态下进行高速运行的读取，以抑制干扰。 此外，通过利用位线电荷设定自旋常数的驱动方法来抑制各个存储单元的波动，以抑制读取干扰。
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公开(公告)号：US20070258281A1
公开(公告)日：2007-11-08
申请号：US11606187
申请日：2006-11-30
IPC分类号： G11C11/02
CPC分类号： G11C11/15
摘要： A magnetic memory device comprises a magnetic tunnel junction (MTJ) having a ferromagnetic free layer, and exhibits a first, relatively high resistance state, and a second, relatively low resistance state. To write to the magnetic memory device a current IMTJ is driven through the MTJ. For a first duration, the current is equal to a DC threshold current, being the DC current required to switch the multilayer structure between the first state and the second state. This induces a C-like domain structure in the free layer. For a second duration, the current IMTJ is larger than the DC threshold current. This causes the MTJ to switch states. The current requited to cause switching is less than that required using a uniform current pulse.
摘要翻译： 磁存储器件包括具有铁磁性自由层的磁性隧道结（MTJ），并且呈现出第一相对高电阻状态和第二较低电阻状态。 为了写入磁存储器件，通过MTJ驱动电流I MTJ 。 对于第一持续时间，电流等于DC阈值电流，即在第一状态和第二状态之间切换多层结构所需的DC电流。 这在自由层中引起C样结构域结构。 在第二持续时间内，当前的电流电流大于直流阈值电流。 这导致MTJ切换状态。 导致切换的电流小于使用均匀电流脉冲所需的电流。
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公开(公告)号：US07787290B2
公开(公告)日：2010-08-31
申请号：US12545379
申请日：2009-08-21
IPC分类号： G11C11/00
CPC分类号： G11C11/16 , G11C8/08 , G11C11/1675 , H01L27/228
摘要： In MRAM using a spin-transfer torque switching, a sufficient writing operation with a small memory cell is realized, and a reading current is enlarged while a reading disturbance is suppressed. In the case where the free layer of the tunnel magneto-resistance element is located on the side of the bit line, using a PMOS transistor, and in the case where the fixed layer of the tunnel magneto-resistance element is located on the side of the bit line, using an NMOS transistor, an anti-parallel writing in a source grounding operation is performed. The reading and writing operation margin is improved by performing a reading operation in an anti-parallel writing direction.
摘要翻译： 在使用自旋转移转矩切换的MRAM中，实现了具有小存储单元的充分的写入操作，并且在读取干扰被抑制的同时增加读取电流。 在隧道磁阻元件的自由层位于位线一侧的情况下，使用PMOS晶体管，并且在隧道磁阻元件的固定层位于 使用NMOS晶体管的位线执行源极接地操作中的反并联写入。 通过执行反并行写入方向的读取操作来提高读取和写入操作余量。
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公开(公告)号：US07443718B2
公开(公告)日：2008-10-28
申请号：US11606187
申请日：2006-11-30
IPC分类号： G11C11/00
CPC分类号： G11C11/15
摘要： A magnetic memory device comprises a magnetic tunnel junction (MTJ) having a ferromagnetic free layer, and exhibits a first, relatively high resistance state, and a second, relatively low resistance state. To write to the magnetic memory device a current IMTJ is driven through the MTJ. For a first duration, the current is equal to a DC threshold current, being the DC current required to switch the multilayer structure between the first state and the second state. This induces a C-like domain structure in the free layer. For a second duration, the current IMTJ is larger than the DC threshold current. This causes the MTJ to switch states. The current requited to cause switching is less than that required using a uniform current pulse.
摘要翻译： 磁存储器件包括具有铁磁性自由层的磁性隧道结（MTJ），并且呈现出第一相对高电阻状态和第二较低电阻状态。 为了写入磁存储器件，通过MTJ驱动电流I MTJ 。 对于第一持续时间，电流等于DC阈值电流，即在第一状态和第二状态之间切换多层结构所需的DC电流。 这在自由层中引起C样结构域结构。 在第二持续时间内，当前的电流电流大于直流阈值电流。 这导致MTJ切换状态。 导致切换的电流小于使用均匀电流脉冲所需的电流。
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公开(公告)号：US20080037179A1
公开(公告)日：2008-02-14
申请号：US11638379
申请日：2006-12-14
申请人： Kenchi Ito , Hiromasa Takahashi , Takayuki Kawahara , Riichiro Takemura , Thibault Devolder , Paul Crozat , Joo-von Kim , Claude Chappert
发明人： Kenchi Ito , Hiromasa Takahashi , Takayuki Kawahara , Riichiro Takemura , Thibault Devolder , Paul Crozat , Joo-von Kim , Claude Chappert
IPC分类号： G11B5/33
CPC分类号： G11C11/16 , Y10S977/935
摘要： A magnetic memory device comprises a magnetic tunnel junction (MTJ) connecting to a bit line to a sense line through an isolation transistor. The MTJ includes a ferromagnetic layer having a magnetic hard axis. An assist current line overlies the bit line and is insulated from the bit line. The MTJ is switchable between a first, relatively high resistance state and a second, relatively low resistance state. The assist current line applies a magnetic field along the magnetic hard axis in the ferromagnetic layer, independently of current flow through the MTJ for assisting switching of the MTJ between the first and second states.
摘要翻译： 磁存储器件包括通过隔离晶体管连接到感测线的位线的磁性隧道结（MTJ）。 MTJ包括具有磁性硬轴的铁磁层。 辅助电流线覆盖位线并与位线绝缘。 MTJ可以在第一相对高电阻状态和第二相对低电阻状态之间切换。 辅助电流线沿铁磁层中的磁性硬轴施加磁场，独立于通过MTJ的电流流动来辅助MTJ在第一和第二状态之间切换。
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