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公开(公告)号：US07919762B2
公开(公告)日：2011-04-05
申请号：US12375889
申请日：2007-07-27
IPC分类号： G01N21/64
CPC分类号： G01N21/6489 , G01N21/66 , G01N21/9501 , G01N2021/6421 , G01R31/2648 , H01L22/10
摘要： Methods (200, 300), apparatuses and systems (100) for determining minority carrier diffusion lengths in a semi-conductor structure (130), which may be a solar cell or a unprocessed or partially processed silicon sample, are disclosed. The luminescence (140) may comprise photoluminescence, electroluminescence, or both. Luminescence (140) is excited (212) in the structure (130), and the intensities of short- and long-wavelength luminescence (140) are measured (214). Luminescence intensities may be captured from either side of the sample using a single photodetector, a FPA, a CCD array (150), or a mapping tool. The luminescence (140) excited in the structure (130) may be filtered (160) at short and long cutoff wavelengths. Diffusion lengths of the structure (130) are generated (216) using a predefined theoretical relationship. The generating step (216) may comprise calculating (316) intensity ratios from luminescence intensities and converting (320) the intensity ratios into diffusion lengths using the predefined theoretical relationship.
摘要翻译： 公开了用于确定半导体结构（130）中的少数载流子扩散长度的方法（200,300），装置和系统（100），其可以是太阳能电池或未处理或部分处理的硅样品。 发光（140）可以包括光致发光，电致发光或两者。 发光（140）在结构（130）中被激发（212），并且测量短波长和长波长发光（140）的强度（214）。 可以使用单个光电检测器，FPA，CCD阵列（150）或映射工具从样品的任一侧捕获发光强度。 在结构（130）中激发的发光（140）可以在短和长截止波长下被滤波（160）。 使用预定义的理论关系产生（216）结构（130）的扩散长度。 生成步骤（216）可以包括从发光强度计算（316）强度比，并且使用预定的理论关系将（320）强度比转换成扩散长度。
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公开(公告)号：US20100025588A1
公开(公告)日：2010-02-04
申请号：US12375889
申请日：2007-07-27
CPC分类号： G01N21/6489 , G01N21/66 , G01N21/9501 , G01N2021/6421 , G01R31/2648 , H01L22/10
摘要： Methods (200, 300), apparatuses and systems (100) for determining minority carrier diffusion lengths in a semi-conductor structure (130), which may be a solar cell or a unprocessed or partially processed silicon sample, are disclosed. The luminescence (140) may comprise photoluminescence, electroluminescence, or both. Luminescence (140) is excited (212) in the structure (130), and the intensities of short- and long-wavelength luminescence (140) are measured (214). Luminescence intensities may be captured from either side of the sample using a single photodetector, a FPA, a CCD array (150), or a mapping tool. The luminescence (140) excited in the structure (130) may be filtered (160) at short and long cutoff wavelengths. Diffusion lengths of the structure (130) are generated (216) using a predefined theoretical relationship. The generating step (216) may comprise calculating (316) intensity ratios from luminescence intensities and converting (320) the intensity ratios into diffusion lengths using the predefined theoretical relationship.
摘要翻译： 公开了用于确定半导体结构（130）中的少数载流子扩散长度的方法（200,300），装置和系统（100），其可以是太阳能电池或未处理或部分处理的硅样品。 发光（140）可以包括光致发光，电致发光或两者。 发光（140）在结构（130）中被激发（212），并且测量短波长和长波长发光（140）的强度（214）。 可以使用单个光电检测器，FPA，CCD阵列（150）或映射工具从样品的任一侧捕获发光强度。 在结构（130）中激发的发光（140）可以在短和长截止波长下被滤波（160）。 使用预定义的理论关系产生（216）结构（130）的扩散长度。 生成步骤（216）可以包括从发光强度计算（316）强度比，并且使用预定的理论关系将（320）强度比转换成扩散长度。
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3.发明授权公开(公告)号：US08064054B2
公开(公告)日：2011-11-22
申请号：US12083429
申请日：2006-10-11
IPC分类号： G01J3/40
CPC分类号： G01N21/6489 , F21Y2115/10 , G01N21/6456 , G01N21/8851 , G01N2021/8887 , H01L22/14
摘要： Methods (600) and systems (100) for inspecting an indirect bandgap semiconductor structure (140) are described. A light source (110) generates light (612) suitable for inducing photoluminescence in the indirect bandgap semiconductor structure (140). A short-pass filter unit (114) reduces long-wavelength light of the generated light above a specified emission peak. A collimator (112) collimates (616) the light. A large area of the indirect bandgap semiconductor structure (140) is substantially uniformly and simultaneously illuminated (618) with the collimated, short-pass filtered light. An image capture device (130) captures (620) images of photoluminescence simultaneously induced by the substantially uniform, simultaneous illumination incident across the large area of the indirect bandgap semiconductor structure. The photoluminescence images are imaged processed (622) to quantify spatially resolved specified electronic properties of the indirect bandgap semiconductor structure (140) using the spatial variation of the photoluminescence induced in the large area.
摘要翻译： 描述了用于检查间接带隙半导体结构（140）的方法（600）和系统（100）。 光源（110）产生适于在间接带隙半导体结构（140）中诱导光致发光的光（612）。 短路滤波器单元（114）将产生的光的长波长光减少到特定发射峰以上。 准直器（112）准直（616）光。 间接带隙半导体结构（140）的大面积基本均匀地并且被同步地照射（618）并且被准直的短路滤波的光。 图像捕获装置（130）捕获（620）由间接带隙半导体结构的大面积上基本均匀的同时照射入射引起的光致发光图像。 对光致发光图像进行成像处理（622），以使用在大面积中诱导的光致发光的空间变化来定量间接带隙半导体结构（140）的空间分辨的特定电子特性。
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4.发明申请公开(公告)号：US20090051914A1
公开(公告)日：2009-02-26
申请号：US12083429
申请日：2006-10-11
IPC分类号： G01J3/40
CPC分类号： G01N21/6489 , F21Y2115/10 , G01N21/6456 , G01N21/8851 , G01N2021/8887 , H01L22/14
摘要： Methods (600) and systems (100) for inspecting an indirect bandgap semiconductor structure (140) are described. A light source (110) generates light (612) suitable for inducing photoluminescence in the indirect bandgap semiconductor structure (140). A short-pass filter unit (114) reduces long-wavelength light of the generated light above a specified emission peak. A collimator (112) collimates (616) the light. A large area of the indirect bandgap semiconductor structure (140) is substantially uniformly and simultaneously illuminated (618) with the collimated, short-pass filtered light. An image capture device (130) captures (620) images of photoluminescence simultaneously induced by the substantially uniform, simultaneous illumination incident across the large area of the indirect bandgap semiconductor structure. The photoluminescence images are image processed (622) to quantify spatially resolved specified electronic properties of the indirect bandgap semiconductor structure (140) using the spatial variation of the photoluminescence induced in the large area.
摘要翻译： 描述了用于检查间接带隙半导体结构（140）的方法（600）和系统（100）。 光源（110）产生适于在间接带隙半导体结构（140）中诱导光致发光的光（612）。 短路滤波器单元（114）将产生的光的长波长光减少到特定发射峰以上。 准直器（112）准直（616）光。 间接带隙半导体结构（140）的大面积基本均匀地并且被同步地照射（618）并且被准直的短路滤波的光。 图像捕获装置（130）捕获（620）由间接带隙半导体结构的大面积上基本均匀的同时照射入射引起的光致发光图像。 使用在大面积中诱导的光致发光的空间变化来对光致发光图像进行图像处理（622）以量化间接带隙半导体结构（140）的空间分辨的指定电子特性。
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5.发明申请公开(公告)号：US20120257044A1
公开(公告)日：2012-10-11
申请号：US13494373
申请日：2012-06-12
IPC分类号： H04N7/18
CPC分类号： G01N21/6489 , F21Y2115/10 , G01N21/6456 , G01N21/8851 , G01N2021/8887 , H01L22/14
摘要： Methods (600) and systems (100) for inspecting an indirect bandgap semiconductor structure (140) are described. A light source (110) generates light (612) suitable for inducing photoluminescence in the indirect bandgap semiconductor structure (140). A short-pass filter unit (114) reduces long-wavelength light of the generated light above a specificed emission peak. A collimator (112) collimates (616) the light. A large area of the indirect bandgap semiconductor structure (140) is substantially uniformly and simultaneously illuminated (618) with the collimated, short-pass filtered light. An image capture device (130) captures (620) images of photoluminescence simultaneously induced by the substantially uniform, simultaneous illumination incident across the large area for the indirect bandgap semiconductor structure. The photoluminescence images are image processed (622) to quantify spatially resolved specified electronic properties of the indirect bandgap semiconductor structure (140) using the spatial variation of the photoluminescence induced in the large area.
摘要翻译： 描述了用于检查间接带隙半导体结构（140）的方法（600）和系统（100）。 光源（110）产生适于在间接带隙半导体结构（140）中诱导光致发光的光（612）。 短路滤波器单元（114）减少高于特定发射峰值的所产生的光的长波长光。 准直器（112）准直（616）光。 间接带隙半导体结构（140）的大面积基本均匀地并且被同步地照射（618）并且被准直的短路滤波的光。 图像捕获装置（130）捕获（620）由间隔带隙半导体结构的跨越大面积的基本均匀的同时照射入射引起的光致发光图像。 使用在大面积中诱导的光致发光的空间变化来对光致发光图像进行图像处理（622）以量化间接带隙半导体结构（140）的空间分辨的指定电子特性。
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6.发明申请公开(公告)号：US20120142125A1
公开(公告)日：2012-06-07
申请号：US13389805
申请日：2010-08-16
CPC分类号： G01N21/6489 , G01N21/6456 , G01N21/9501 , G01N21/9505
摘要： A method of photoluminence (PL) imaging of a series of silicon wafers, the method including the step of: utilizing incident illumination of a wavelength greater than 808 nm. The present invention further provides a method of analysing silicon semiconductor material utilising various illumination, camera and filter combinations. In some embodiments the PL response is captured by a MOSIR camera. In another embodiment a camera is used to capture the entire PL response and a long pass filter is applied to block a portion of the signal reaching the camera/detector.
摘要翻译： 一种硅晶片的发光（PL）成像方法，该方法包括以下步骤：利用大于808nm的波长的入射照明。 本发明还提供了利用各种照明，相机和滤光器组合来分析硅半导体材料的方法。 在一些实施例中，PL响应由MOSIR相机捕获。 在另一个实施例中，相机用于捕获整个PL响应，并且应用长通滤波器来阻挡到达相机/检测器的信号的一部分。
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公开(公告)号：US08483476B2
公开(公告)日：2013-07-09
申请号：US12675642
申请日：2008-09-01
IPC分类号： G06K9/00
CPC分类号： G01N21/6489 , G01N21/9501 , G01N2021/8887 , H01L31/18
摘要： Disclosed is a method (300) of manufacturing at least one semiconductor photovoltaic cell or module and for classifying semiconductor material. In one implementation (500) the method involves luminescence imaging a wafer at each of a plurality of stages (312-324) of the manufacturing process, and comparing at least two images obtained from the imaging step in respect of the same wafer to identify the incidence or growth of a manufacturing process induced fault. The wafer is removed (351-356) from the manufacturing process (310) where a process induced fault is identified that exceeds a predetermined level of acceptability or the fault may be remedied, or the wafer passed to an alternate manufacturing process to match its characteristics. In an alternate implementation the method comprises classifying semiconductor material. For example, providing at least two wafers, obtaining luminescence images of each wafer comparing the images to determine the electrical structure similarity of the wafers, and grouping wafers with a predetermined level of electrical structure similarity into the same family. The inventive method is suitable for determining various forms of mechanical, electrical and cosmetic irregularities.
摘要翻译： 公开了一种制造至少一个半导体光伏电池或模块并用于对半导体材料进行分类的方法（300）。 在一个实施方案（500）中，该方法涉及在制造过程的多个阶段（312-324）的每一个处对晶片进行发光成像，并且比较从相同晶片的成像步骤获得的至少两个图像，以识别 制造过程中发生或发展导致的故障。 从制造过程（310）移除晶片（351-356），其中识别超过预定可接受水平的过程引起的故障或者可以补救故障，或者将晶片传递到替代的制造过程以匹配其特性 。 在替代实施方式中，该方法包括对半导体材料进行分类。 例如，提供至少两个晶片，获得每个晶片的发光图像，比较图像以确定晶片的电气结构相似性，以及将具有预定水平的电气结构相似性的晶片分组到同一系列中。 本发明的方法适用于确定各种形式的机械，电和美容不均匀。
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公开(公告)号：US20110188733A1
公开(公告)日：2011-08-04
申请号：US12675642
申请日：2008-09-01
CPC分类号： G01N21/6489 , G01N21/9501 , G01N2021/8887 , H01L31/18
摘要： Disclosed is a method (300) of manufacturing at least one semiconductor photovoltaic cell or module and for classifying semiconductor material. In one implementation (500) the method involves luminescence imaging a wafer at each of a plurality of stages (312-324) of the manufacturing process, and comparing at least two images obtained from the imaging step in respect of the same wafer to identify the incidence or growth of a manufacturing process induced fault. The wafer is removed (351-356) from the manufacturing process (310) where a process induced fault is identified that exceeds a predetermined level of acceptability or the fault may be remedied, or the wafer passed to an alternate manufacturing process to match its characteristics. In an alternate implementation the method comprises classifying semiconductor material. For example, providing at least two wafers, obtaining luminescence images of each wafer comparing the images to determine the electrical structure similarity of the wafers, and grouping wafers with a predetermined level of electrical structure similarity into the same family. The inventive method is suitable for determining various forms of mechanical, electrical and cosmetic irregularities.
摘要翻译： 公开了一种制造至少一个半导体光伏电池或模块并用于对半导体材料进行分类的方法（300）。 在一个实施方案（500）中，该方法涉及在制造过程的多个阶段（312-324）的每一个处对晶片进行发光成像，并且比较从相同晶片的成像步骤获得的至少两个图像，以识别 制造过程中发生或发展导致的故障。 从制造过程（310）移除晶片（351-356），其中识别超过预定可接受水平的过程引起的故障或者可以补救故障，或者将晶片传递到替代的制造过程以匹配其特性 。 在替代实施方式中，该方法包括对半导体材料进行分类 例如，提供至少两个晶片，获得每个晶片的发光图像，比较图像以确定晶片的电气结构相似性，以及将具有预定水平的电气结构相似性的晶片分组到同一系列中。 本发明的方法适用于确定各种形式的机械，电和美容不均匀。
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公开(公告)号：US20110117681A1
公开(公告)日：2011-05-19
申请号：US13002748
申请日：2009-07-09
CPC分类号： H01L22/20 , C23C16/52 , G01N21/6456 , G01N21/6489 , G01N2021/646 , G01R31/2648 , G01R31/2656 , H01L22/12
摘要： Methods and apparatus are presented for monitoring the deposition and/or post-deposition processing of semiconductor thin films using photoluminescence imaging. The photoluminescence images are analysed to determine one or more properties of the semiconductor film, and variations thereof across the film. These properties are used to infer information about the deposition process, which can then be used to adjust the deposition process conditions and the conditions of subsequent processing steps. The methods and apparatus have particular application to thin film-based solar cells.
摘要翻译： 提出了使用光致发光成像监测半导体薄膜的沉积和/或沉积后处理的方法和装置。 分析光致发光图像以确定半导体膜的一个或多个特性及其在膜上的变化。 这些性质用于推断关于沉积过程的信息，然后可以使用这些信息来调整沉积工艺条件和后续处理步骤的条件。 该方法和装置特别适用于基于薄膜的太阳能电池。
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10.发明申请METHOD AND SYSTEM FOR TESTING INDIRECT BANDGAP SEMICONDUCTOR DEVICES USING LUMINESCENCE IMAGING 有权用于测试使用发光成像的间接带状半导体器件的方法和系统公开(公告)号：US20090206287A1
公开(公告)日：2009-08-20
申请号：US12299759
申请日：2007-05-04
IPC分类号： G01N23/04
CPC分类号： H02S50/15 , G01N21/64 , G01N21/6489 , G01N21/66 , G01N21/9501 , G01N21/956 , H01L31/022425
摘要： Embodiments of methods and systems for identifying or determining spatially resolved properties in indirect bandgap semiconductor devices such as solar cells are described. In one embodiment, spatially resolved properties of an indirect bandgap semiconductor device are determined by externally exciting the indirect bandgap semiconductor device to cause the indirect bandgap semiconductor device to emit luminescence (110), capturing images of luminescence emitted from the indirect bandgap semiconductor device in response to the external excitation (120), and determining spatially resolved properties of the indirect bandgap semiconductor device based on a comparison of relative intensities of regions in one or more of the luminescence images (130).
摘要翻译： 描述了用于识别或确定诸如太阳能电池的间接带隙半导体器件中的空间分辨特性的方法和系统的实施例。 在一个实施例中，间接带隙半导体器件的空间分辨性质通过外部激发间接带隙半导体器件来确定，以使间接带隙半导体器件发射发光（110），从而响应于从间接带隙半导体器件发射的发光的图像 基于一个或多个发光图像（130）中的区域的相对强度的比较来确定间接带隙半导体器件的空间分辨特性。
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