公开(公告)号：US11175331B2

公开(公告)日：2021-11-16

申请号：US16074686

申请日：2017-01-18

申请人： Robert Bosch GmbH

发明人： Daniel Schneider ,  Franz Dietz

IPC分类号： G01R31/02 ,  G01R31/26 ,  G01R27/02 ,  G01R31/28 ,  G01R31/27

摘要： An aging detector for an electrical circuit component and a method for monitoring an aging of a circuit component includes an input of the aging detector recording a parameter of the circuit component, with the aging circuit being configured to, based on the recorded parameter, determine a corresponding response threshold and/or a response or adapt the response threshold and/or the response, and to initiate the response to the parameter exceeding the specific response threshold.

公开(公告)号：US20210199708A1

公开(公告)日：2021-07-01

申请号：US16074686

申请日：2017-01-18

申请人： Robert Bosch GmbH

发明人： Daniel Schneider ,  Franz Dietz

IPC分类号： G01R31/26 ,  G01R27/02

摘要： An aging detector for an electrical circuit component and a method for monitoring an aging of a circuit component includes an input of the aging detector recording a parameter of the circuit component, with the aging circuit being configured to, based on the recorded parameter, determine a corresponding response threshold and/or a response or adapt the response threshold and/or the response, and to initiate the response to the parameter exceeding the specific response threshold.

公开(公告)号：US20180138098A1

公开(公告)日：2018-05-17

申请号：US15573252

申请日：2016-05-09

申请人： Robert Bosch GmbH

发明人： Daniel Schneider ,  Franz Dietz

IPC分类号： H01L21/66 ,  H01L23/522 ,  H01L23/58 ,  H01L23/528 ,  H01L23/00 ,  G01R31/26

CPC分类号： H01L22/34 ,  G01R31/2607 ,  G01R31/2644 ,  H01L23/5226 ,  H01L23/528 ,  H01L23/562 ,  H01L23/585

摘要： A detector for determining a faulty semiconductor component including a semiconductor component, a contact-via chain, which is situated laterally at a distance from the semiconductor component and which surrounds the semiconductor component in regions, a guard ring, which is situated laterally at a distance from the semiconductor component, and an evaluation unit, which is situated on the semiconductor component, wherein the evaluation unit is designed to apply an electrical voltage to the contact-via chain, in particular a permanent electrical voltage, to detect a resistance value of the contact-via chain and to produce an output signal when the resistance value of the contact-via chain exceeds a threshold value.

公开(公告)号：US20190271728A1

公开(公告)日：2019-09-05

申请号：US16348232

申请日：2017-09-12

申请人： Robert Bosch GmbH

发明人： Timo Seitzinger ,  Franz Dietz

IPC分类号： G01R31/00 ,  H02H9/04 ,  H02H1/00

摘要： An apparatus for detecting a number of electrostatic discharges, comprises a discharge protection device, wherein a detection unit is disposed electrically in parallel with the discharge protection device, and the detection unit encompasses at least one memory block, the memory block having a reset input.

公开(公告)号：US20180143243A1

公开(公告)日：2018-05-24

申请号：US15573505

申请日：2016-05-09

申请人： Robert Bosch GmbH

发明人： Franz Dietz ,  Lichao Teng ,  Markus Ost

IPC分类号： G01R31/28 ,  G01R31/36

CPC分类号： G01R31/2858 ,  G01R31/2884 ,  G01R31/3835

摘要： An assembly of strip conductors for determining errors in a semiconductor circuit, the strip conductors may be situated on a level of the semiconductor circuit. The assembly includes multiple sections, the sections being arranged as a series circuit, each section including a number of strip conductors, the number of strip conductors in the particular sections being different, each section including a start area and an end area, a voltage difference value between the start area and the end area of the particular section being detectable, and the voltage difference values of the particular sections being different in the case of an error.

公开(公告)号：US10684323B2

公开(公告)日：2020-06-16

申请号：US15573505

申请日：2016-05-09

申请人： Robert Bosch GmbH

发明人： Franz Dietz ,  Lichao Teng ,  Markus Ost

IPC分类号： G01R31/28 ,  G01R31/3835

摘要： An assembly of strip conductors for determining errors in a semiconductor circuit, the strip conductors may be situated on a level of the semiconductor circuit. The assembly includes multiple sections, the sections being arranged as a series circuit, each section including a number of strip conductors, the number of strip conductors in the particular sections being different, each section including a start area and an end area, a voltage difference value between the start area and the end area of the particular section being detectable, and the voltage difference values of the particular sections being different in the case of an error.

公开(公告)号：US10431507B2

公开(公告)日：2019-10-01

申请号：US15573252

申请日：2016-05-09

申请人： Robert Bosch GmbH

发明人： Daniel Schneider ,  Franz Dietz

IPC分类号： G01R31/26 ,  H01L21/66 ,  H01L23/58 ,  H01L23/522 ,  H01L23/528 ,  H01L23/00

摘要： A detector for determining a faulty semiconductor component including a semiconductor component, a contact-via chain, which is situated laterally at a distance from the semiconductor component and which surrounds the semiconductor component in regions, a guard ring, which is situated laterally at a distance from the semiconductor component, and an evaluation unit, which is situated on the semiconductor component, wherein the evaluation unit is designed to apply an electrical voltage to the contact-via chain, in particular a permanent electrical voltage, to detect a resistance value of the contact-via chain and to produce an output signal when the resistance value of the contact-via chain exceeds a threshold value.