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公开(公告)号：US08168366B2
公开(公告)日：2012-05-01
申请号：US12253072
申请日：2008-10-16
CPC分类号： G03F7/0397 , C08F220/18 , C08F220/24 , C08F220/28 , C08F220/60 , G03F7/0046 , G03F7/2041 , Y10S430/108 , Y10S430/111
摘要： The present invention relates to a radiation sensitive photoresist composition. The composition comprises a polymer comprising at least two monomers. The first monomer has an acid cleavable tertiary ester group. The second monomer is an acidic monomer. The acid cleavable ester group of the polymer has a surprisingly low activation energy which results in improved resist images in lithographic processes.
摘要翻译： 本发明涉及一种辐射敏感光刻胶组合物。 组合物包含包含至少两种单体的聚合物。 第一单体具有酸可裂解的叔酯基。 第二单体是酸性单体。 聚合物的酸可裂解酯基具有惊人的低活化能，这导致光刻工艺中抗蚀剂图像的改善。
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2.发明授权公开(公告)号：US08034532B2
公开(公告)日：2011-10-11
申请号：US11380744
申请日：2006-04-28
申请人： Robert David Allen , Phillip Joe Brock , Carl E. Larson , Ratnam Sooriyakumaran , Linda Karin Sundberg , Hoa D Truong
发明人： Robert David Allen , Phillip Joe Brock , Carl E. Larson , Ratnam Sooriyakumaran , Linda Karin Sundberg , Hoa D Truong
CPC分类号： G03F7/11 , G03F7/0046 , G03F7/0752 , G03F7/2041 , Y10S430/108 , Y10S430/111
摘要： A topcoat material for application on top of a photoresist material is disclosed. The topcoat material comprises an acid-inert compound. The topcoat material also comprises a polymer or an oligomer or a cage structure which shows negligible intermixing with the imaging layer and is soluble in aqueous base developer. A method of forming a patterned material layer on a substrate and a coated substrate comprising the topcoat material is also disclosed.
摘要翻译： 公开了一种用于施加在光致抗蚀剂材料上的面漆材料。 面漆材料包含酸惰性化合物。 面漆材料还包括聚合物或低聚物或保持架结构，其与成像层混合可忽略，并且可溶于碱性显影液。 还公开了在基材上形成图案化材料层的方法和包含面漆材料的涂布基材。
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公开(公告)号：US08945808B2
公开(公告)日：2015-02-03
申请号：US11380731
申请日：2006-04-28
申请人： Robert Allen David , Phillip Joe Brock , Carl E Larson , Daniel Paul Sanders , Ratnam Sooriyakumaran , Linda Karin Sundberg , Hoa D Truong , Gregory Michael Wallraff
发明人： Robert Allen David , Phillip Joe Brock , Carl E Larson , Daniel Paul Sanders , Ratnam Sooriyakumaran , Linda Karin Sundberg , Hoa D Truong , Gregory Michael Wallraff
CPC分类号： G03F7/2041 , G03F7/0046 , G03F7/0392 , G03F7/0757
摘要： Resist compositions that can be used in immersion lithography without the use of an additional topcoat are disclosed. The resist compositions comprise a photoresist polymer, at least one photoacid generator, a solvent; and a self-topcoating resist additive. A method of forming a patterned material layer on a substrate using the resist composition is also disclosed.
摘要翻译： 公开了可用于浸没式光刻中而不使用另外的顶涂层的抗蚀剂组合物。 抗蚀剂组合物包含光致抗蚀剂聚合物，至少一种光致酸产生剂，溶剂; 和自 - 面漆抗蚀剂添加剂。 还公开了使用抗蚀剂组合物在衬底上形成图案化材料层的方法。
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