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公开(公告)号:US5465171A
公开(公告)日:1995-11-07
申请号:US334674
申请日:1994-11-04
CPC分类号: G02F1/125 , G02F1/11 , H01S5/0607 , H01S5/02236
摘要: An optical modulator device comprised of a semiconductor laser acoustically coupled to a thin film resonator is disclosed herein. The thin film resonator includes a piezoelectric crystal layer having first and second opposing surfaces, with the first opposing surface being in contact with a metallic electrode. The semiconductor laser is interposed between an acoustically reflective surface and the second surface of the thin film resonator. In a preferred implementation the acoustically reflective surface is defined by a submount underlying a substrate upon which is mounted the semiconductor laser.A frequency modulator exhibiting an improved modulation index may be achieved by integrating a superlattice structure within the active region of the semiconductor laser. The superlattice structure will preferably include a cascaded stack of stacked pairs, each stack pair constituent being of a thickness equivalent to a multiple of one-half of the wavelength of optical emission produced by the semiconductor laser of the superlattice.The optical device may also be implemented in the form of a phase modulator disposed to provide a phase-modulated optical output of predetermined frequency. Phase modulation is produced in the absence of appreciable frequency modulation by configuring the thin film resonator to be of a longitudinal length less than that of the semiconductor laser.
摘要翻译: 本文公开了由声耦合到薄膜谐振器的半导体激光器构成的光调制器装置。 薄膜谐振器包括具有第一和第二相对表面的压电晶体层,第一相对表面与金属电极接触。 半导体激光器介于声反射表面和薄膜谐振器的第二表面之间。 在优选实施例中,声反射表面由安装半导体激光器的衬底下方的底座限定。 可以通过在半导体激光器的有源区域内集成超晶格结构来实现具有改进的调制指数的频率调制器。 超晶格结构将优选地包括堆叠对的级联堆叠,每个叠层组分的厚度等于由超晶格的半导体激光器产生的光发射的波长的一半的倍数。 光学器件还可以以相位调制器的形式实现,该相位调制器设置成提供预定频率的相位调制光输出。 在没有明显的频率调制的情况下通过将薄膜谐振器配置成比半导体激光器的纵向长度小的纵向长度来产生相位调制。