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公开(公告)号：US5465171A
公开(公告)日：1995-11-07
申请号：US334674
申请日：1994-11-04
CPC分类号： G02F1/125 , G02F1/11 , H01S5/0607 , H01S5/02236
摘要： An optical modulator device comprised of a semiconductor laser acoustically coupled to a thin film resonator is disclosed herein. The thin film resonator includes a piezoelectric crystal layer having first and second opposing surfaces, with the first opposing surface being in contact with a metallic electrode. The semiconductor laser is interposed between an acoustically reflective surface and the second surface of the thin film resonator. In a preferred implementation the acoustically reflective surface is defined by a submount underlying a substrate upon which is mounted the semiconductor laser.A frequency modulator exhibiting an improved modulation index may be achieved by integrating a superlattice structure within the active region of the semiconductor laser. The superlattice structure will preferably include a cascaded stack of stacked pairs, each stack pair constituent being of a thickness equivalent to a multiple of one-half of the wavelength of optical emission produced by the semiconductor laser of the superlattice.The optical device may also be implemented in the form of a phase modulator disposed to provide a phase-modulated optical output of predetermined frequency. Phase modulation is produced in the absence of appreciable frequency modulation by configuring the thin film resonator to be of a longitudinal length less than that of the semiconductor laser.
摘要翻译： 本文公开了由声耦合到薄膜谐振器的半导体激光器构成的光调制器装置。 薄膜谐振器包括具有第一和第二相对表面的压电晶体层，第一相对表面与金属电极接触。 半导体激光器介于声反射表面和薄膜谐振器的第二表面之间。 在优选实施例中，声反射表面由安装半导体激光器的衬底下方的底座限定。 可以通过在半导体激光器的有源区域内集成超晶格结构来实现具有改进的调制指数的频率调制器。 超晶格结构将优选地包括堆叠对的级联堆叠，每个叠层组分的厚度等于由超晶格的半导体激光器产生的光发射的波长的一半的倍数。 光学器件还可以以相位调制器的形式实现，该相位调制器设置成提供预定频率的相位调制光输出。 在没有明显的频率调制的情况下通过将薄膜谐振器配置成比半导体激光器的纵向长度小的纵向长度来产生相位调制。
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公开(公告)号：US08013791B1
公开(公告)日：2011-09-06
申请号：US12182678
申请日：2008-07-30
申请人： Robert J. Weber , Shannon Wanner , Hsin-Jan Fu , Saalini Sekar
发明人： Robert J. Weber , Shannon Wanner , Hsin-Jan Fu , Saalini Sekar
IPC分类号： H01Q3/30
CPC分类号： H01Q3/2605 , H01Q3/38
摘要： A method of spatial control of a phased array system having a plurality of antenna elements is provided. The method includes providing a baseband signal, baseband phase shifting the baseband signal to provide a plurality of baseband shifted signals for controlling phase of each of the plurality of antenna elements, upconverting each of the baseband shifted signals to a radio frequency signal, and applying each of the radio frequency signals to the plurality of antenna elements to thereby provide for spatial control of the phased array system. A hardware architecture for a phased array system is also provided.
摘要翻译： 提供了一种具有多个天线元件的相控阵列系统的空间控制方法。 该方法包括提供基带信号，基带相移基带信号以提供多个基带移位信号，用于控制多个天线元件中的每一个的相位，将每个基带位移信号上变频为射频信号， 的射频信号发送到多个天线元件，从而提供相控阵列系统的空间控制。 还提供了用于相控阵系统的硬件架构。
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公开(公告)号：US06876283B1
公开(公告)日：2005-04-05
申请号：US10618055
申请日：2003-07-11
申请人： Robert J. Weber , Chieh-Hsiao Wang
发明人： Robert J. Weber , Chieh-Hsiao Wang
CPC分类号： B81B3/0086 , B81B2201/014 , B81B2203/0118 , B81B2203/019 , H01H59/0009
摘要： The invention provides tapered-width micro-cantilevers and micro-bridges that give additional design parameters for controlling and synthesizing pull-in (i.e., actuation) voltages. The pull-in voltage of a tapered-width micro-cantilever is generally a function of the taper function of the width along the length, the initial width, and the length of the micro-cantilever. By controlling these design parameters, a specific pull-in voltage for a micro-cantilever is obtained. The formula for a pull-in voltage is determined based on the geometry of the micro-cantilever device and a plurality of derived pull-in voltages. The pull-in voltage is derived by iteratively solving a displacement vector as a function of applied voltage across the micro-cantilever device and setting the pull-in voltage to the voltage at which the solution does not converge. The formula is derived for linear-tapered width, parabolic-tapered width and exponential-tapered width micro-cantilevers.
摘要翻译： 本发明提供了锥形宽度微悬臂梁和微型桥梁，其提供用于控制和合成拉入（即致动）电压的附加设计参数。 锥形宽度微悬臂的拉入电压通常是沿着长度，初始宽度和微悬臂长度的宽度的锥度函数的函数。 通过控制这些设计参数，可获得微悬臂梁的特定拉入电压。 基于微悬臂装置的几何形状和多个导出的拉入电压来确定拉入电压的公式。 通过迭代地求解位移矢量作为跨越微悬臂装置上的施加电压的函数并将拉入电压设置为解不融合的电压来导出拉入电压。 该公式是针对线性锥形宽度，抛物线锥形宽度和指数锥形宽度微悬臂梁而导出的。
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4.发明授权Multiple layer acoustical structures for thin-film resonator based circuits and systems 失效用于基于薄膜谐振器的电路和系统的多层声学结构
公开(公告)号：US5864261A
公开(公告)日：1999-01-26
申请号：US789404
申请日：1997-01-29
申请人： Robert J. Weber
发明人： Robert J. Weber
CPC分类号： H03H9/175 , H03H9/02078 , H03H9/02133 , H03H9/583 , H03H9/585 , H03H9/589
摘要： A stacked thin film device structure grown on a substrate, the resonator structure comprising a thin film device comprising at least one piezoelectric crystal layer sandwiched between metallic electrodes, and constructed to have an acoustic response in a given frequency range, and an acoustical stack disposed between and joining the thin film device and the substrate and comprising multiple layers of material, each layer having a characteristic thickness and impedance and being composed of a non-lossless material, the characteristic thicknesses and impedances of the layers being adjusted to determine the input impedance presented to the thin film device, and thereby determining the acoustical coupling between the thin film device and the substrate.
摘要翻译： 一种在衬底上生长的层叠薄膜器件结构，所述谐振器结构包括薄膜器件，薄膜器件包括夹在金属电极之间的至少一个压电晶体层，并被构造为在给定频率范围内具有声响应，以及设置在 并且连接薄膜器件和衬底并且包括多层材料，每个层具有特征厚度和阻抗并且由非无损材料组成，调节层的特征厚度和阻抗以确定呈现的输入阻抗 到薄膜器件，从而确定薄膜器件和衬底之间的声耦合。
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公开(公告)号：US4816778A
公开(公告)日：1989-03-28
申请号：US135101
申请日：1987-12-18
申请人： Robert J. Weber
发明人： Robert J. Weber
CPC分类号： H03B5/24 , H03B5/20 , H03B2200/0028 , H03B27/00
摘要： When an oscillator is required to operate at high frequencies, there may be more than one frequency that can provide the required 360.degree. phase shift in the feedback signal, and thus more than one oscillating frequency. The present invention eliminates prior art inductors in assuring (for oscillators having an odd number of stages) that there is only a single range of frequencies having the desired phase shift in the feedback loop. In a three-stage oscillator, this is accomplished by designing the circuit to have 120.degree. of phase shift in each stage at the desired oscillatory RF frequency, but 180.degree. of phase shift at near DC frequency.
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公开(公告)号：US4323863A
公开(公告)日：1982-04-06
申请号：US79616
申请日：1979-09-27
申请人： Robert J. Weber
发明人： Robert J. Weber
CPC分类号： H01P5/16
摘要： An n-way power divider, particularly useful where n.noteq.2.sup.x, includes an input and a plurality of outputs. The power applied to the input is coupled to the outputs, and phase shifters are associated with at least some of the outputs. The phase shift provided by each of the phase shifters is determined such that the reflected power waves from each of the outputs appearing at the input cancel. Because the circuit is reciprocal, it can also be used as a signal combiner with appropriately phased power-wave vectors at the inputs.
摘要翻译： 一个n路功率分配器，特别适用于n NOTEQUAL 2x，包括一个输入和多个输出。 施加到输入的功率耦合到输出，并且移相器与至少一些输出相关联。 由每个移相器提供的相移被确定为使得输出中出现的每个输出的反射功率波消除。 因为电路是互逆的，所以它也可以用作在输入端具有合适的相位功率波矢量的信号组合器。
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公开(公告)号：US20110026869A1
公开(公告)日：2011-02-03
申请号：US12845943
申请日：2010-07-29
申请人： Sasha N. Kemmet , Jin-Wei Tioh , Mani Mina , Robert J. Weber
发明人： Sasha N. Kemmet , Jin-Wei Tioh , Mani Mina , Robert J. Weber
CPC分类号： G02F1/0955
摘要： A fiber-based, magneto-optic (MO) optical modulator or switch based on Sagnac interferometry is provided. The system uses a magneto-optic Faraday rotator (MOFR) to produce optical modulation with low magnetic fields. The Sagnac geometry allows for increased modulation at lower fields than traditional MO modulators. This switch uses the MOFR to create different states of polarization in counter-propagating waves, which results in interference at the output port. A magnetic field is used to control the amount of rotation in the state of polarization (SOP), and therefore, the ON-OFF extinction ratio.
摘要翻译： 提供了基于Sagnac干涉测量的基于光纤的磁光（MO）光调制器或开关。 该系统使用磁光法拉第旋转器（MOFR）来产生具有低磁场的光学调制。 Sagnac几何允许在比较传统MO调制器更低的场下增加调制。 该开关使用MOFR在反向传播波中产生不同的极化状态，这导致输出端口的干扰。 使用磁场来控制偏振状态（SOP）中的旋转量，因此控制ON-OFF消光比。
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公开(公告)号：US07160183B2
公开(公告)日：2007-01-09
申请号：US10431764
申请日：2003-05-08
申请人： Robert J. Weber
发明人： Robert J. Weber
IPC分类号： B24D11/00
摘要： A buff is made from a non-woven fabric where the fibers are first carded and formed into a fairly thick fleece. The fleece is passed over a topographical surface on, for example, a moving belt or a drum. The fleece is subject to a bow-tie hydroentanglement process where many fine jets of water entangle the fibers on the topographical surface. Excess water is vacuumed from the system. The fabric is dried and chemically treated. With the fabric a variety of buffing tools are made, in wheel, belt or roll form. Tests against standard and mill treatment buffs show a remarkably lower fabric weight loss percentage and lower or normal operating temperatures. The fabric has exceptional mechanical strength having a tensile strength in excess of 650 N/50 mm according to DIN 29073/3. Preferably the fabric has a tensile strength of at least 1,000 N/50 mm in the machine direction and in excess of 900 N/50 mm in the cross direction according to such DIN.
摘要翻译： 抛光机由无纺布制成，其中纤维首先被梳理并形成相当厚的羊毛。 羊毛通过例如移动带或滚筒上的地形表面。 羊毛采用弓领水刺手法，其中许多精细的水射流缠绕在地形表面上的纤维。 多余的水从系统中抽真空。 将织物干燥并化学处理。 用织物制成各种抛光工具，轮子，皮带或卷筒形式。 针对标准和磨粉处理磨损的试验显示织物重量损失百分比显着降低或正常工作温度。 根据DIN 29073/3，该织物具有超过650N / 50mm的拉伸强度的优异的机械强度。 优选地，织物在机器方向上的拉伸强度至少为1000N / 50mm，并且根据DIN，在横向方向上的拉伸强度超过900N / 50mm。
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公开(公告)号：US5256991A
公开(公告)日：1993-10-26
申请号：US883690
申请日：1992-05-15
IPC分类号： H03H11/50
CPC分类号： H03H11/50
摘要： A broadband microwave active inductor circuit for producing a flat inductive response versus frequency comprises a pair of bipolar transistors arranged in a gyrator configuration for producing an active inductance. Because the transistors exhibit intrinsic characteristics which influence the inductive response of the active inductor circuit, a feedback network is connected to the gyrator configuration to compensate for the intrinsic characteristics of the transistors so that the active inductor circuit realizes a flat inductive response over a wide range of frequencies including microwave frequencies.
摘要翻译： 用于产生平坦的感应响应与频率的宽带微波有源电感器电路包括一对双极晶体管，其布置在用于产生有源电感的回转器配置中。 因为晶体管表现出影响有源电感器电路的感应响应的固有特性，反馈网络连接到回转器配置以补偿晶体管的固有特性，使得有源电感器电路在宽范围内实现平坦的感应响应 的频率包括微波频率。
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公开(公告)号：US4683443A
公开(公告)日：1987-07-28
申请号：US822579
申请日：1986-01-27
摘要： A single circuit which provides forward biasing, input impedance matching and voltage input limiting to a transistor which has a source, gate and drain terminal is presented. Biasing, input matching and limiting for a transistor is accomplished using two inductor coils, five crystal diodes, a positive voltage source, and three resistors. The forward biasing is achieved using three resistors, and the third, fourth and fifth crystal diode. The third resistor connects the drain terminal of the transistor to the positive voltage source. The second resistor connects the junction between the third resistor and the drain terminal to the transistor's gate terminal. The fourth and fifth crystal diodes are connected in series between the source terminal and the common electrical ground. The first resistor and third diode are connected in parallel between the transistor's gate terminal and the common electrical ground. Limiting of the input voltages over the gate terminal is accomplished by the first and second crystal diodes which are connected in series with each other and in a parallel circuit with the first resistor/diode and the common electrical ground. Finally, input impedance matching is accomplished by the two inductor coils which are connected in series with the gate terminal with the first three diodes and first resistor between them. The parasitic impedances of the three cyrstal diodes create a shunt capacitor in parallel with the first resistor. The shunt capacitor to ground and second inductor coil provide impedance matching to the transistor.
摘要翻译： 提供了一种向具有源极，栅极和漏极端子的晶体管提供正向偏置，输入阻抗匹配和电压输入限制的单个电路。 使用两个电感线圈，五个晶体二极管，正电压源和三个电阻来实现晶体管的偏置，输入匹配和限制。 使用三个电阻器和第三，第四和第五晶体二极管实现正向偏置。 第三电阻将晶体管的漏极端子连接到正电压源。 第二个电阻器将第三个电阻和漏极端子之间的连接点连接到晶体管的栅极端子。 第四和第五晶体二极管串联在源极端子和公共电气接地之间。 第一个电阻和第三个二极管并联在晶体管的栅极端子和公共电气接地之间。 通过栅极端子上的输入电压的限制由第一和第二晶体二极管实现，第一和第二晶体二极管彼此串联连接并且与第一电阻器/二极管和公共电接地并联连接。 最后，输入阻抗匹配由两个电感线圈实现，两个电感线圈与栅极端子串联连接，前三个二极管和它们之间的第一个电阻。 三个Cyrstal二极管的寄生阻抗与第一个电阻器并联产生并联电容器。 分流电容对地和第二电感线圈提供与晶体管的阻抗匹配。
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