Sacrificial benzocyclobutene/norbornene polymers for making air gap semiconductor devices

    公开(公告)号:US20060246681A1

    公开(公告)日:2006-11-02

    申请号:US10544428

    申请日:2004-01-30

    IPC分类号: H01L21/76

    摘要: A method of forming an air gap within a semiconductor structure by the steps of: (a) using a sacrificial polymer to occupy a space in a semiconductor structure; and (b) heating the semiconductor structure to decompose the sacrificial polymer leaving an air gap within the semiconductor structure, wherein the sacrificial polymer of step (a) is: (a) a copolymer of 5-ethylidene-2-norbornene and vinylbenzocyclobutene (or a vinylbenzocyclobutene derivative); or (b) a copolymer of 5-ethylidene-2-norbornene and 5-(3benzocyclobutylidene)-2-norbornene; or (c) a polymer of 5-(3benzocyclobutylidene)-2-norbornene. In addition, a semiconductor structure, having a sacrificial polymer positioned between conductor lines, wherein the sacrificial polymer is: (a) a copolymer of 5-ethylidene-2-norbornene and vinylbenzocyclobutene (or a vinylbenzocyclobutene derivative); or (b) a copolymer of 5-ethylidene-2-norbornene and 5-(3benzocyclobutylidene)-2-norbornene; or (c) a polymer of 5-(3benzocyclobutylidene)-2-norbornene.

    Sacrificial benzocyclobutene copolymers for making air gap semiconductor devices
    2.
    发明申请
    Sacrificial benzocyclobutene copolymers for making air gap semiconductor devices 有权
    用于制造气隙半导体器件的牺牲苯并环丁烯共聚物

    公开(公告)号:US20060292892A1

    公开(公告)日:2006-12-28

    申请号:US10544415

    申请日:2004-01-30

    IPC分类号: H01L23/58 H01L21/31

    摘要: A method of forming an air gap within a semiconductor structure by the steps of: (a) using a sacrificial polymer to occupy a space in a semiconductor structure; and (b) heating the semiconductor structure to decompose the sacrificial polymer leaving an air gap within the semiconductor structure, wherein the sacrificial polymer of step (a) is a copolymer of bis [3-(4-benzocyclobutenyl)] 1,n (n=2-12) alkyldiol diacrylate (such as bis [3-(4-benzocyclobutenyl)] 1,6 hexanediol diacrylate) and 1,3 bis 2 [4-benzocyclobutenyl (ethenyl)] benzene. In addition, a semiconductor structure, having a sacrificial polymer positioned between conductor lines, wherein the sacrificial polymer is a copolymer of bis [3-(4-benzocyclobutenyl)] 1,n (n=2-12)alkyldiol diacrylate and 1,3 bis 2 [4-benzocyclobutenyl(ethenyl)] benzene.

    摘要翻译: 一种通过以下步骤在半导体结构内形成气隙的方法:(a)使用牺牲聚合物占据半导体结构中的空间; (b)加热半导体结构以分解牺牲聚合物,在半导体结构内留下空隙,其中步骤(a)的牺牲聚合物是双[3-(4-苯并环丁烯基)] 1,n(n = 2-12)二丙烯酸烷基二醇酯(例如双[3-(4-苯并环丁烯基)] 1,6-己二醇二丙烯酸酯)和1,3-双2 [4-苯并环丁烯基(乙烯基)]苯。 另外,具有位于导体线之间的牺牲聚合物的半导体结构,其中牺牲聚合物是双[3-(4-苯并环丁烯基)] 1,n(n = 2-12)烷基二醇二丙烯酸酯和1,3 双[4-苯并环丁烯基(乙烯基)]苯。

    Sacrificial styrene benzocyclobutene copolymers for making air gap semiconductor devices
    3.
    发明申请
    Sacrificial styrene benzocyclobutene copolymers for making air gap semiconductor devices 审中-公开
    用于制造气隙半导体器件的牺牲苯乙烯苯并环丁烯共聚物

    公开(公告)号:US20060264065A1

    公开(公告)日:2006-11-23

    申请号:US10544416

    申请日:2004-01-30

    摘要: A method of forming an air gap within a semiconductor structure by the steps of: (a) using a sacrificial polymer to occupy a space in a semiconductor structure; and (b) heating the semiconductor structure to decompose the sacrificial polymer leaving an air gap within the semiconductor structure, wherein the sacrificial polymer of step (a) is a copolymer of styrene or styrene derivative (such as alpha methyl styrene) and vinylbenzocyclobutene or a vinylbenzocyclobutene derivative. In addition, a semiconductor structure, having a sacrificial polymer positioned between conductor lines, wherein the sacrificial polymer is a copolymer of styrene or styrene derivative and vinylbenzocyclobutene or a vinylbenzocyclobutene derivative.

    摘要翻译: 一种通过以下步骤在半导体结构内形成气隙的方法:(a)使用牺牲聚合物占据半导体结构中的空间; 并且(b)加热半导体结构以分解在半导体结构内留下空隙的牺牲聚合物,其中步骤(a)的牺牲聚合物是苯乙烯或苯乙烯衍生物(例如α-甲基苯乙烯)和乙烯基苯并环丁烯的共聚物或 乙烯基苯并环丁烯衍生物。 另外,具有位于导线之间的牺牲聚合物的半导体结构,其中牺牲聚合物是苯乙烯或苯乙烯衍生物与乙烯基苯并环丁烯或乙烯基苯并环丁烯衍生物的共聚物。