-
公开(公告)号:US20080264340A1
公开(公告)日:2008-10-30
申请号:US12169238
申请日:2008-07-08
IPC分类号: C23C16/00
CPC分类号: C23C14/564 , H01J37/32504 , H01J37/34 , H01J2237/026
摘要: A shielding system for a physical vapor deposition chamber having a sputter target above the pedestal. The shielding system comprises a pedestal shield attachable to the pedestal and movable therewith. The pedestal shield surrounds and extends outward from the pedestal toward the chamber side or lower walls. The system also comprises a sidewall shield adapted to extend substantially around and within the chamber sidewalls, and downward from an upper portion thereof. The sidewall shield has a lower end extending inward and disposed adjacent the pedestal shield upper portion when the pedestal is in the raised position. The pedestal shield and sidewall shield cooperate, when the pedestal is in the raised position, to prevent line-of-sight deposition transmission from the sputter target to the side and lower walls of the deposition chamber.
摘要翻译: 一种用于物理气相沉积室的屏蔽系统,其具有在基座上方的溅射靶。 屏蔽系统包括可附接到基座并与其移动的基座屏蔽。 基座护罩围绕并从基座朝向室侧或下壁向外延伸。 该系统还包括侧壁屏蔽件,其适于在腔室侧壁内部和内部延伸,并且从其上部向下延伸。 侧壁屏蔽件具有向内延伸的下端,并且当基座处于升高位置时邻近基座屏蔽件上部设置。 当基座处于升高位置时,基座屏蔽和侧壁屏蔽配合以防止从溅射靶到沉积室的侧壁和下壁的视线沉积传输。