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公开(公告)号：US20110123152A1
公开(公告)日：2011-05-26
申请号：US12991651
申请日：2008-05-09
IPC分类号： G02B6/34
CPC分类号： G02B27/145 , G02B6/125 , G02B6/2817 , G02B6/43 , G02B27/106 , G02B27/1073 , G02B27/144
摘要： An optical splitter device and method are provided. The device can include a waveguide having walls forming a large hollow core. The waveguide can be configured to direct an optical signal through the large hollow core. An optical tap can be formed through at least one wall of the waveguide. In addition, a prism can be located in the large hollow core of the waveguide and aligned with the optical tap. A splitter coating can be provided on the prism to direct a portion of the optical signal outside of the waveguide through the optical tap.
摘要翻译： 提供了光分路器装置和方法。 该装置可以包括具有形成大空心芯的壁的波导。 波导可以被配置成将光信号引导通过大空芯。 可以通过波导的至少一个壁形成光学分接头。 另外，棱镜可以位于波导的大的中空芯中并且与光学抽头对准。 可以在棱镜上设置分离器涂层，以将光信号的一部分通过光学分接头引导到波导外部。
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公开(公告)号：US08712198B2
公开(公告)日：2014-04-29
申请号：US12991651
申请日：2008-05-09
CPC分类号： G02B27/145 , G02B6/125 , G02B6/2817 , G02B6/43 , G02B27/106 , G02B27/1073 , G02B27/144
摘要： An optical splitter device and method are provided. The device can include a waveguide having walls forming a large hollow core. The waveguide can be configured to direct an optical signal through the large hollow core. An optical tap can be formed through at least one wall of the waveguide. In addition, a prism can be located in the large hollow core of the waveguide and aligned with the optical tap. A splitter coating can be provided on the prism to direct a portion of the optical signal outside of the waveguide through the optical tap.
摘要翻译： 提供了光分路器装置和方法。 该装置可以包括具有形成大空心芯的壁的波导。 波导可以被配置成将光信号引导通过大空芯。 可以通过波导的至少一个壁形成光学分接头。 另外，棱镜可以位于波导的大的中空芯中并且与光学抽头对准。 可以在棱镜上设置分离器涂层，以将光信号的一部分通过光学分接头引导到波导外部。
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公开(公告)号：US06893892B2
公开(公告)日：2005-05-17
申请号：US10633259
申请日：2003-08-01
IPC分类号： H01L21/00
CPC分类号： G01N27/127
摘要： A sensor is disclosed. A representative sensor includes a silicon substrate having a porous silicon region. A portion of the porous silicon region has a front contact is disposed thereon. The contact resistance between the porous silicon region and the front contact is between about 10 ohms and 100 ohms.
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公开(公告)号：US06589883B2
公开(公告)日：2003-07-08
申请号：US09820412
申请日：2001-03-29
申请人： James L. Gole , Lenward T. Seals
发明人： James L. Gole , Lenward T. Seals
IPC分类号： H01L21302
CPC分类号： H01L21/306 , H01L21/288 , Y10S438/96 , Y10T428/12674
摘要： A post-etch treatment for enhancing and stabilizing the photoluminescence (PL) from a porous silicon (PS) substrate is outlined. The method includes treating the PS substrate with an aqueous hydrochloric acid solution and then treating the PS substrate with an alcohol. Alternatively, the post-etch method of enhancing and stabilizing the PL from a PS substrate includes treating the PS substrate with an aqueous hydrochloric acid and alcohol solution. Further, the PL of the PS substrate can be enhanced by treating the PS substrate with a dye. Furthermore, the PS substrate can be metallized to form a PS substrate with resistances ranging from 20 to 1000 ohms.
摘要翻译： 概述了用于增强和稳定多孔硅（PS）衬底的光致发光（PL）的蚀刻后处理。 该方法包括用盐酸水溶液处理PS底物，然后用醇处理PS底物。 或者，从PS衬底增强和稳定PL的后蚀刻方法包括用盐酸水溶液和醇溶液处理PS衬底。 此外，通过用染料处理PS基板可以提高PS基板的PL。 此外，PS衬底可以金属化以形成电阻范围为20至1000欧姆的PS衬底。
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公开(公告)号：US07838949B2
公开(公告)日：2010-11-23
申请号：US11041358
申请日：2005-01-24
IPC分类号： H01L27/14
CPC分类号： G01N27/127
摘要： A sensor is disclosed. A representative sensor includes a silicon substrate having a porous silicon region. A portion of the porous silicon region has a front contact is disposed thereon. The contact resistance between the porous silicon region and the front contact is between about 10 ohms and 100 ohms.
摘要翻译： 公开了一种传感器。 代表性的传感器包括具有多孔硅区域的硅衬底。 多孔硅区域的一部分设置有前触点。 多孔硅区域和前端接触点之间的接触电阻介于约10欧姆与100欧姆之间。
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公开(公告)号：US06828253B2
公开(公告)日：2004-12-07
申请号：US10453573
申请日：2003-06-03
申请人： James L. Gole , Lenward T. Seals
发明人： James L. Gole , Lenward T. Seals
IPC分类号： H01L21302
CPC分类号： H01L21/306 , H01L21/288 , Y10S438/96 , Y10T428/12674
摘要： A post-etch treatment for enhancing and stabilizing the photoluminescence (PL) from a porous silicon (PS) substrate is outlined. The method includes treating the PS substrate with an aqueous hydrochloric acid solution and then treating the PS substrate with an alcohol. Alternatively, the post-etch method of enhancing and stabilizing the PL from a PS substrate includes treating the PS substrate with an aqueous hydrochloric acid and alcohol solution. Further, the PL of the PS substrate can be enhanced by treating the PS substrate with dye. Furthermore, the PS substrate can be metallized to form a PS substrate with resistances ranging from 20 to 1000 ohms.
摘要翻译： 概述了用于增强和稳定多孔硅（PS）衬底的光致发光（PL）的蚀刻后处理。 该方法包括用盐酸水溶液处理PS底物，然后用醇处理PS底物。 或者，从PS衬底增强和稳定PL的后蚀刻方法包括用盐酸水溶液和醇溶液处理PS衬底。 此外，通过用染料处理PS基材可以提高PS基板的PL。 此外，PS衬底可以金属化以形成电阻范围为20至1000欧姆的PS衬底。
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公开(公告)号：US06673644B2
公开(公告)日：2004-01-06
申请号：US10268860
申请日：2002-10-10
IPC分类号： H01L2100
CPC分类号： G01N27/128
摘要： A sensor is disclosed. A representative sensor includes a silicon substrate having a porous silicon region. A portion of the porous silicon region has a front contact is disposed thereon. The contact resistance between the porous silicon region and the front contact is between about 10 ohms and 100 ohms.
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