公开(公告)号：US07501605B2

公开(公告)日：2009-03-10

申请号：US11511367

申请日：2006-08-29

申请人： Robert Steger ,  Keith Comendant

发明人： Robert Steger ,  Keith Comendant

IPC分类号： H05B1/02

CPC分类号： H01L21/67248 ,  H01L21/6831 ,  Y10T279/23

摘要： A method of tuning the thermal conductivity of an electrostatic chuck (ESC) support assembly comprises measuring the temperature at a plurality of sites on a support assembly surface in which each site is associated with a given cell, determining from the measurements any fractional reduction in area suggested for each cell, and removing material from the support assembly surface within each cell in accordance with the suggested fractional reduction in order to decrease thermal conductivity in that cell. The material removal can result in an improvement to the equilibrium temperature uniformity of the electrostatic chuck support assembly at the chuck surface of an electrostatic chuck bonded to the support assembly surface, or can result in an equilibrium temperature profile of the ESC support assembly which approaches or achieves a target equilibrium temperature profile. Thermal conductivity tuning can thus take place by a method comprising defining a cell structure, determining the target areal density of each cell and removing a fractional area of material to achieve the target areal density for that cell. Material removal can be effected by drilling, routing, laser machining or grit blast machining on an X-Y table.

摘要翻译： 调整静电卡盘（ESC）支撑组件的导热性的方法包括测量支撑组件表面上的多个位置处的温度，其中每个部位与给定的电池相关联，从测量中确定任何部分面积的减小 建议每个电池，并根据建议的分数还原从每个电池中的支撑组件表面去除材料，以降低该电池中的热导率。 材料去除可以改善静电卡盘支撑组件在与支撑组件表面接合的静电卡盘的卡盘表面处的平衡温度均匀性，或者可以导致ESC支撑组件的平衡温度分布接近或接近 达到目标平衡温度曲线。 因此，热导率调节可以通过包括限定单元结构，确定每个单元的目标面积密度和去除材料的分数区域以实现该单元的目标面积密度的方法发生。 通过在X-Y台上进行钻孔，布线，激光加工或砂粒加工可以实现材料去除。

公开(公告)号：US07939784B2

公开(公告)日：2011-05-10

申请号：US12362139

申请日：2009-01-29

申请人： Robert Steger ,  Keith Comendant

发明人： Robert Steger ,  Keith Comendant

IPC分类号： B23K10/00

CPC分类号： H01L21/67248 ,  H01L21/6831 ,  Y10T279/23

摘要： A method of tuning the thermal conductivity of an electrostatic chuck (ESC) support assembly comprises measuring the temperature at a plurality of sites on a support assembly surface in which each site is associated with a given cell, determining from the measurements any fractional reduction in area suggested for each cell, and removing material from the support assembly surface within each cell in accordance with the suggested fractional reduction in order to decrease thermal conductivity in that cell. The material removal can result in an improvement to the equilibrium temperature uniformity of the electrostatic chuck support assembly at the chuck surface of an electrostatic chuck bonded to the support assembly surface, or can result in an equilibrium temperature profile of the ESC support assembly which approaches or achieves a target equilibrium temperature profile. Thermal conductivity tuning can thus take place by a method comprising defining a cell structure, determining the target areal density of each cell and removing a fractional area of material to achieve the target areal density for that cell. Material removal can be effected by drilling, routing, laser machining or grit blast machining on an X-Y table.

摘要翻译： 调整静电卡盘（ESC）支撑组件的导热性的方法包括测量支撑组件表面上的多个位置处的温度，其中每个部位与给定的电池相关联，从测量中确定任何部分面积的减小 建议每个电池，并根据建议的分数还原从每个电池中的支撑组件表面去除材料，以降低该电池中的热导率。 材料去除可以改善静电卡盘支撑组件在与支撑组件表面接合的静电卡盘的卡盘表面处的平衡温度均匀性，或者可以导致ESC支撑组件的平衡温度分布接近或接近 达到目标平衡温度曲线。 因此，热导率调节可以通过包括限定单元结构，确定每个单元的目标面积密度和去除材料的分数区域以实现该单元的目标面积密度的方法发生。 通过在X-Y台上进行钻孔，布线，激光加工或砂粒加工可以实现材料去除。

公开(公告)号：US20070181257A1

公开(公告)日：2007-08-09

申请号：US11696327

申请日：2007-04-04

申请人： Keith Comendant ,  Robert Steger

发明人： Keith Comendant ,  Robert Steger

IPC分类号： C23F1/00

CPC分类号： H01J37/32633 ,  H01J37/321

摘要： An apparatus and method is provided for positioning and utilizing a Faraday shield in direct exposure to a plasma within an inductively coupled plasma etching apparatus. Broadly speaking, the Faraday shield configuration maintains a condition of an etching chamber window. At a minimum, positioning the Faraday shield between the window and the plasma prevents erosion of the window resulting from plasma sputter and shunts heat generated by an etching process away from the window.

摘要翻译： 提供了一种用于在电感耦合等离子体蚀刻装置内定位和利用法拉第屏蔽件直接暴露于等离子体的装置和方法。 一般来说，法拉第屏蔽配置保持蚀刻室窗口的状态。 至少将法拉第屏蔽定位在窗口和等离子体之间可以防止由等离子体溅射引起的窗口的侵蚀，并且将由蚀刻工艺产生的热分流离开窗口。

公开(公告)号：US20080083736A1

公开(公告)日：2008-04-10

申请号：US11511367

申请日：2006-08-29

申请人： Robert Steger ,  Keith Comendant

发明人： Robert Steger ,  Keith Comendant

IPC分类号： H05B1/02 ,  H01L21/683 ,  B23K9/02

CPC分类号： H01L21/67248 ,  H01L21/6831 ,  Y10T279/23

摘要： A method of tuning the thermal conductivity of an electrostatic chuck (ESC) support assembly comprises measuring the temperature at a plurality of sites on a support assembly surface in which each site is associated with a given cell, determining from the measurements any fractional reduction in area suggested for each cell, and removing material from the support assembly surface within each cell in accordance with the suggested fractional reduction in order to decrease thermal conductivity in that cell. The material removal can result in an improvement to the equilibrium temperature uniformity of the electrostatic chuck support assembly at the chuck surface of an electrostatic chuck bonded to the support assembly surface, or can result in an equilibrium temperature profile of the ESC support assembly which approaches or achieves a target equilibrium temperature profile. Thermal conductivity tuning can thus take place by a method comprising defining a cell structure, determining the target areal density of each cell and removing a fractional area of material to achieve the target areal density for that cell. Material removal can be effected by drilling, routing, laser machining or grit blast machining on an X-Y table.

摘要翻译： 调整静电卡盘（ESC）支撑组件的导热性的方法包括测量支撑组件表面上的多个位置处的温度，其中每个部位与给定的电池相关联，从测量中确定任何部分面积的减小 建议每个电池，并根据建议的分数还原从每个电池中的支撑组件表面去除材料，以降低该电池中的热导率。 材料去除可以改善静电卡盘支撑组件在与支撑组件表面接合的静电卡盘的卡盘表面处的平衡温度均匀性，或者可以导致ESC支撑组件的平衡温度分布接近或接近 达到目标平衡温度曲线。 因此，热导率调节可以通过包括限定单元结构，确定每个单元的目标面积密度和去除材料的分数区域以实现该单元的目标面积密度的方法发生。 通过在X-Y台上进行钻孔，布线，激光加工或砂粒加工可以实现材料去除。

公开(公告)号：US20090215201A1

公开(公告)日：2009-08-27

申请号：US12436443

申请日：2009-05-06

申请人： Neil Benjamin ,  Robert Steger

发明人： Neil Benjamin ,  Robert Steger

IPC分类号： H01L21/465 ,  H01L21/66

CPC分类号： H01L21/67248 ,  H01J37/32724 ,  H01J2237/2001 ,  H01J2237/334 ,  H01L21/67069 ,  H01L21/67103 ,  H01L21/6833 ,  H01L21/68714

摘要： A chuck for a plasma processor comprises a temperature-controlled base, a thermal insulator, a flat support, and a heater. The temperature-controlled base is controlled in operation a temperature below the desired temperature of a workpiece. The thermal insulator is disposed over at least a portion of the temperature-controlled base. The flat support holds a workpiece and is disposed over the thermal insulator. A heater is embedded within the flat support and/or mounted to an underside of the flat support. The heater includes a plurality of heating elements that heat a plurality of corresponding heating zones. The power supplied and/or temperature of each heating element is controlled independently. The heater and flat support have a combined temperature rate change of at least 1° C. per second.

摘要翻译： 用于等离子体处理器的卡盘包括温度控制的基座，绝热体，平坦的支架和加热器。 温度控制的基座在工作温度下控制在低于工件所需温度的温度。 热绝缘体设置在温度受控基底的至少一部分上。 平面支撑件保持工件并且设置在绝热体上方。 加热器嵌入在平坦支撑件内和/或安装到平坦支撑件的下侧。 加热器包括多个加热元件，其加热多个相应的加热区。 每个加热元件的供电功率和/或温度都是独立控制的。 加热器和平坦支架的组合温度变化率每秒至少1℃。

公开(公告)号：US20070086144A1

公开(公告)日：2007-04-19

申请号：US11562884

申请日：2006-11-22

申请人： Robert Steger

发明人： Robert Steger

IPC分类号： H01T23/00

CPC分类号： H01L21/6831 ,  H01L21/67069 ,  H01L21/67109 ,  H01L21/67248

摘要： An electrostatic chuck (“chuck”) is provided for controlling a radial temperature profile across a substrate when exposed to a plasma. The chuck includes a number of independently controllable gas volumes that are each defined in a radial configuration relative to a top surface of the chuck upon which the substrate is to be supported. The chuck includes a support member and a base plate. The base plate positioned beneath and in a spaced apart relationship from the support member. The gas volumes are defined between the base plate and the support member, with separation provided by annularly-shaped thermally insulating dividers. Each gas volume can include a heat generation source. A gas pressure and heat generation within each gas volume can be controlled to influence thermal conduction through the chuck such that a prescribed radial temperature profile is achieved across the substrate.

公开(公告)号：US20050022736A1

公开(公告)日：2005-02-03

申请号：US10630584

申请日：2003-07-29

申请人： Robert Steger

发明人： Robert Steger

IPC分类号： H01J37/32 ,  C23C16/00

CPC分类号： H01J37/32458 ,  H01J37/321 ,  H01J37/32174

摘要： A plasma processing reactor includes a chamber and a substrate support. The chamber includes an opening extending through a sidewall of the chamber. The substrate support is removably mounted within the chamber. The opening of the chamber is large enough to allow the substrate support to be removed from the chamber through the opening. A portion of a surface of the inner sidewall and the substrate support within the chamber has a coating. The coating is made of an electrically resistive material. The coating creates an impedance along the portion of the surface of the inner sidewall, which would otherwise carry a greater portion of the RF return current than the opposite side of the chamber. The coating also creates an impedance along the substrate support so that the density of the RF return current along the surface of the inner walls of the chamber is substantially more uniform.

摘要翻译： 等离子体处理反应器包括室和基板支撑件。 腔室包括延伸穿过腔室侧壁的开口。 衬底支撑件可移除地安装在腔室内。 室的开口足够大以允许衬底支撑件通过开口从腔室移除。 内侧壁的表面的一部分和腔室内的基底支撑件具有涂层。 涂层由电阻材料制成。 涂层沿着内侧壁表面的部分产生阻抗，否则其将承受比腔室相对侧更大部分的RF返回电流。 涂层还沿着衬底支撑件产生阻抗，使得沿室的内壁表面的RF返回电流的密度基本上更均匀。

公开(公告)号：US5730803A

公开(公告)日：1998-03-24

申请号：US605823

申请日：1996-02-23

申请人： Robert Steger ,  James Taoka ,  Gregory Shmunis

发明人： Robert Steger ,  James Taoka ,  Gregory Shmunis

IPC分类号： C23C16/458 ,  C23C16/46 ,  H01L21/00 ,  H01L21/683 ,  C23C16/00

CPC分类号： C23C16/463 ,  C23C16/4586 ,  C23C16/46 ,  C23C16/466 ,  H01L21/67109 ,  H01L21/6831 ,  H01L21/6833 ,  Y10T29/41

摘要： The present invention discloses an apparatus and method for transferring heat from a hot electrostatic chuck to an underlying cold plate. Further, the overall structure of the electrostatic chuck in combination with the heat transfer apparatus of the present invention permits the thermal and pressure isolation of the high-temperature, vacuum process chamber containing the work piece processing surface of the electrostatic chuck from the low-temperature, atmospheric pressured heat transfer apparatus of the present invention. In a preferred embodiment of the heat transfer apparatus, the apparatus comprises: an electrostatic chuck body having a buried electrode for high voltage DC and RF electrical input and a buried heating element, whereby the electrostatic chuck can be heated; a controlled heat transfer apparatus, including a heat transfer plate having a first surface in thermal contact with the electrostatic chuck body and a second surface in contact with at least one heat transfer thermal well; a cold body in thermal contact with the at least one heat transfer thermal well; and a thermal grease between the thermal well and the cold body.

摘要翻译： 本发明公开了一种用于将热量从热静电吸盘传送到下面的冷板的装置和方法。 此外，与本发明的传热装置结合的静电卡盘的整体结构允许将包含静电卡盘的工件处理表面的高温真空处理室的热和压力隔离从低温 本发明的大气压力传热装置。 在传热装置的优选实施例中，该装置包括：具有用于高压DC和RF电输入的掩埋电极和埋入加热元件的静电卡盘体​​，由此可以加热静电卡盘; 一种受控传热装置，包括具有与静电吸盘主体热接触的第一表面的传热板和与至少一个传热热井接触的第二表面; 与所述至少一个传热热井热接触的冷体; 以及热井和冷体之间的导热油脂。

公开(公告)号：US07869184B2

公开(公告)日：2011-01-11

申请号：US11289313

申请日：2005-11-30

申请人： Robert Steger

发明人： Robert Steger

IPC分类号： H01L21/683

CPC分类号： H01L21/6875 ,  H01L21/6831 ,  Y10T29/49002

摘要： A method of modifying the heat transfer coefficient profile of an electrostatic chuck by configuring the areal density of a mesa configuration of an insulating layer of the chuck is provided. A method of modifying the capacitance profile of an electrostatic chuck by adjustment or initial fabrication of the height of a mesa configuration of an insulating layer of the chuck is further provided. The heat transfer coefficient at a given site can be measured by use of a heat flux probe, whereas the capacitance at a given site can be measured by use of a capacitance probe. The probes are placed on the insulating surface of the chuck and may include a plurality of mesas in a single measurement. A plurality of measurements made across the chuck provide a heat transfer coefficient profile or a capacitance profile, from which a target mesa areal density and a target mesa height are determined. The target density and height are achieved mechanically; the target density by mechanically adjusting the areal density of existing mesas; and the target height by creating or deepening low areas surrounding planned or existing mesas, respectively. This can be accomplished using any of known techniques for controlled material removal such as laser machining or grit blast machining on an X-Y table.

摘要翻译： 提供了通过配置卡盘的绝缘层的台面构造的面密度来改变静电卡盘的传热系数分布的方法。 还提供了通过调整或初始制造卡盘绝缘层的台面构造的高度来改变静电卡盘的电容分布的方法。 可以通过使用热通量探针来测量给定部位的传热系数，而可以通过使用电容探针来测量给定部位的电容。 探针被放置在卡盘的绝缘表面上，并且可以在单个测量中包括多个台面。 在卡盘上进行的多次测量提供传热系数分布或电容分布，从中确定目标台面面积密度和目标台面高度。 目标密度和高度机械地实现; 目标密度通过机械调节现有台面的面密度; 并分别通过创造或加深围绕计划的或现有台面的低地区来实现目标的高度。 这可以使用用于控制材料去除的已知技术来实现，例如在X-Y工作台上的激光加工或喷砂加工。

公开(公告)号：US06952255B2

公开(公告)日：2005-10-04

申请号：US10636086

申请日：2003-08-06

申请人： Andrew Perry ,  Robert Steger ,  Neil Benjamin

发明人： Andrew Perry ,  Robert Steger ,  Neil Benjamin

IPC分类号： G01C1/00 ,  H01L21/68 ,  G01B11/26

CPC分类号： G01C1/00 ,  H01J2237/30438 ,  H01L21/681

摘要： An optical alignment system for use in a semiconductor processing system is provided. The optical alignment system includes a wafer chuck that has an alignment feature integrated into the top surface of the wafer chuck. In addition, a beam-forming system, which is capable of emitting an optical signal onto the alignment feature, is disposed above the wafer chuck. Also, a detector is included that can detect an amplitude of the optical signal emitted onto the alignment feature. In one aspect, the alignment feature can be a reflective alignment feature that reflects a portion of the optical signal back to the beam detector. In additional aspect, the alignment feature can be a transmittance alignment feature capable of allowing a portion of the optical signal to pass through the wafer chuck to the detector. In this aspect, the detector can be disposed below the wafer chuck.