公开(公告)号：US20120064694A1

公开(公告)日：2012-03-15

申请号：US12880419

申请日：2010-09-13

申请人： Roger A. BOOTH, JR. ,  Kangguo CHENG ,  Joseph ERVIN ,  Chengwen PEI ,  Ravi M. TODI ,  Geng WANG ,  Yanli ZHANG

发明人： Roger A. BOOTH, JR. ,  Kangguo CHENG ,  Joseph ERVIN ,  Chengwen PEI ,  Ravi M. TODI ,  Geng WANG ,  Yanli ZHANG

IPC分类号： H01L21/02

CPC分类号： H01L29/66181 ,  H01L27/1087

摘要： A method of forming a deep trench structure for a semiconductor device includes forming a mask layer over a semiconductor substrate. An opening in the mask layer is formed by patterning the mask layer, and a deep trench is formed in the semiconductor substrate using the patterned opening in the mask layer. A sacrificial fill material is formed over the mask layer and into the deep trench. A first portion of the sacrificial fill material is recessed from the deep trench and a first dopant implant forms a first doped region in the semiconductor substrate. A second portion of the sacrificial fill material is recessed from the deep trench and a second dopant implant forms a second doped region in the semiconductor substrate, wherein the second doped region is formed underneath the first doped region such that the second doped region and the first doped region are contiguous with each other.

摘要翻译： 形成半导体器件的深沟槽结构的方法包括在半导体衬底上形成掩模层。 通过对掩模层进行构图来形成掩模层中的开口，并且使用掩模层中的图案化开口在半导体衬底中形成深沟槽。 牺牲填充材料形成在掩模层上并进入深沟槽中。 牺牲填充材料的第一部分从深沟槽凹陷，并且第一掺杂剂注入在半导体衬底中形成第一掺杂区域。 牺牲填充材料的第二部分从深沟槽凹陷，并且第二掺杂剂注入在半导体衬底中形成第二掺杂区，其中第二掺杂区形成在第一掺杂区的下方，使得第二掺杂区和第一掺杂区 掺杂区域彼此邻接。

公开(公告)号：US20120261797A1

公开(公告)日：2012-10-18

申请号：US13530519

申请日：2012-06-22

申请人： Joseph ERVIN ,  Brian MESSENGER ,  Karen A. NUMMY ,  Ravi M. TODI

发明人： Joseph ERVIN ,  Brian MESSENGER ,  Karen A. NUMMY ,  Ravi M. TODI

IPC分类号： H01L29/92

CPC分类号： H01L28/60 ,  H01L21/84 ,  H01L27/1203 ,  H01L29/66181 ,  H01L29/945

摘要： Deep trench capacitor structures and methods of manufacture are disclosed. The method includes forming a deep trench structure in a wafer comprising a substrate, buried oxide layer (BOX) and silicon (SOI) film. The structure includes a wafer comprising a substrate, buried insulator layer and a layer of silicon on insulator layer (SOI) having a single crystalline structure throughout the layer. The structure further includes a first plate in the substrate and an insulator layer in direct contact with the first plate. A doped polysilicon is in direct contact with the insulator layer and also in direct contact with the single crystalline structure of the SOI.

摘要翻译： 公开了深沟槽电容器结构和制造方法。 该方法包括在包括衬底，掩埋氧化物层（BOX）和硅（SOI））膜的晶片中形成深沟槽结构。 该结构包括晶片，其包括衬底，掩埋绝缘体层和在整个层中具有单晶结构的绝缘体上硅层（SOI）层。 该结构还包括基板中的第一板和与第一板直接接触的绝缘体层。 掺杂多晶硅与绝缘体层直接接触，并且与SOI的单晶结构直接接触。

公开(公告)号：US20110204524A1

公开(公告)日：2011-08-25

申请号：US12710553

申请日：2010-02-23

申请人： Robert HANNON ,  Subramanian S. IYER ,  Gerd PFEIFFER ,  Ravi M. TODI ,  Kevin R. WINSTEL

发明人： Robert HANNON ,  Subramanian S. IYER ,  Gerd PFEIFFER ,  Ravi M. TODI ,  Kevin R. WINSTEL

IPC分类号： H01L23/48 ,  H01L21/762

CPC分类号： H01L21/76251 ,  H01L21/84 ,  H01L29/66181

摘要： Structures and methods are provided for forming pre-fabricated deep trench capacitors for SOI substrates. The method includes forming a trench in a substrate and forming a dielectric material in the trench. The method further includes depositing a conductive material over the dielectric material in the trench and forming an insulator layer over the conductive material and the substrate.

摘要翻译： 提供了用于形成用于SOI衬底的预制深沟槽电容器的结构和方法。 该方法包括在衬底中形成沟槽并在沟槽中形成电介质材料。 该方法还包括在沟槽中的电介质材料上沉积导电材料，并在导电材料和衬底之上形成绝缘体层。