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    REGENERATION METHOD FOR RESTORING PHOTOVOLTAIC CELL EFFICIENCY
    6.
    发明申请
    REGENERATION METHOD FOR RESTORING PHOTOVOLTAIC CELL EFFICIENCY 有权
    恢复光伏电池效率的再生方法

    公开(公告)号：US20110100413A1

    公开(公告)日：2011-05-05

    申请号：US12887121

    申请日：2010-09-21

    申请人： Lawrence A. Clevenger ,  Rainer Krause ,  Zhengwen Li ,  Gerd Pfeiffer ,  Kevin Prettyman ,  Brian C. Sapp

    发明人： Lawrence A. Clevenger ,  Rainer Krause ,  Zhengwen Li ,  Gerd Pfeiffer ,  Kevin Prettyman ,  Brian C. Sapp

    IPC分类号： H01L31/042 ,  H01L31/18

    CPC分类号： H02S40/40 ,  H01L31/03767 ,  H01L31/042 ,  H01L31/1864 ,  H02S50/10 ,  Y02E10/50 ,  Y02P70/521 ,  Y10T29/413

    摘要： An apparatus, system, and method are disclosed for restoring efficiency of a photovoltaic cell. An illumination module illuminates photovoltaic cells so the cells receive a time integrated irradiance equivalent to at least 5 hours of solar illumination. After illumination, an annealing module anneals the photovoltaic cells at a temperature above 90 degrees Celsius for a minimum of 10 minutes. In one embodiment, the illumination module illuminates the photovoltaic cells for a time integrated irradiance equivalent to at least 20 hours of solar illumination. In another embodiment, the illumination module illuminates the photovoltaic cells for a time integrated irradiance equivalent to at least 16 hours of solar illumination while being heated to at least 50 degrees Celsius. In another embodiment, a solar concentrator irradiates the photovoltaic cells in sunlight for at least 10 hours and increases the irradiance of solar illumination on the cells by a factor of 2 to 5.

    摘要翻译： 公开了用于恢复光伏电池的效率的装置，系统和方法。 照明模块照亮光伏电池，使得电池接收等于至少5小时的太阳照明的时间积分辐照度。 在照明之后，退火模块在高于90摄氏度的温度下使光伏电池退火至少10分钟。 在一个实施例中，照明模块照亮光伏电池以达到等于至少20小时的太阳照明的时间积分辐照度。 在另一个实施例中，照明模块照亮光伏电池的时间积分辐照度等于至少16小时的太阳能照明，同时被加热到至少50摄氏度。 在另一个实施例中，太阳能聚光器在太阳光下照射太阳能电池至少10小时，并将太阳照射在电池上的辐照度提高2至5倍。

    HIGH RESISTIVITY SOI BASE WAFER USING THERMALLY ANNEALED SUBSTRATE
    7.
    发明申请
    HIGH RESISTIVITY SOI BASE WAFER USING THERMALLY ANNEALED SUBSTRATE 有权
    使用热退火衬底的高电阻SOI衬底波形

    公开(公告)号：US20090110898A1

    公开(公告)日：2009-04-30

    申请号：US11931371

    申请日：2007-10-31

    申请人： Max Levy ,  Dale Martin ,  Gerd Pfeiffer ,  James A. Slinkman

    发明人： Max Levy ,  Dale Martin ,  Gerd Pfeiffer ,  James A. Slinkman

    IPC分类号： H01L21/30 ,  B32B7/02 ,  B32B9/00 ,  B32B9/04

    CPC分类号： H01L21/76254 ,  H01L21/76256 ,  H01L29/78603 ,  Y10T428/249921 ,  Y10T428/31504

    摘要： A method of forming a semiconductor-on-insulator (SOI) substrate using a thermal annealing process to provide a semiconductor base wafer having a thin high resistivity surface layer that is positioned at the interface with the buried insulating layer is provided. Specifically, the inventive method fabricates an a semiconductor-on-insulator (SOI) substrate having an SOI layer and a semiconductor base wafer that are separated, at least in part, by a buried insulating layer, wherein the semiconductor base wafer includes a high resistivity (HR) surface layer located on a lower resistivity semiconductor portion of the semiconductor base wafer, and the HR surface layer forms an interface with the buried insulating layer.

    摘要翻译： 提供一种使用热退火工艺形成绝缘体上半导体（SOI）衬底的方法，以提供具有位于与掩埋绝缘层的界面处的薄的高电阻率表面层的半导体基底晶片。 具体地，本发明的方法制造具有至少部分由掩埋绝缘层分离的SOI层和半导体基底晶片的绝缘体上半导体（SOI）衬底，其中半导体基底晶片包括高电阻率 （HR）表层，并且所述HR表面层与所述掩埋绝缘层形成界面。

    Production of a lift-off mask and its application
    9.
    发明授权
    Production of a lift-off mask and its application 失效
    生产脱膜面膜及其应用

    公开(公告)号：US4659650A

    公开(公告)日：1987-04-21

    申请号：US840344

    申请日：1986-03-17

    申请人： Holger Moritz ,  Gerd Pfeiffer

    发明人： Holger Moritz ,  Gerd Pfeiffer

    IPC分类号： H01L21/027 ,  G03F1/00 ,  G03F1/08 ,  G03F7/023 ,  G03F7/039 ,  G03F7/20 ,  G03F7/40 ,  H01L21/306 ,  B05D5/12 ,  H01L21/312

    CPC分类号： G03F7/0233 ,  G03F7/2022

    摘要： A positive resist containing a weak base and polyvinyl phenol as a film forming component is deposited on a substrate, subsequently exposed imagewise, cured, blanket exposed and developed in a KOH solution at temperatures of less than 10.degree. C. The resist pattern thus obtained is exposed to light having a wavelength ranging from 300 to 320 nm and finally heat-treated at temperatures ranging from 150.degree. to 280.degree. C. The finished lift-off mask is dimensionally stable at temperatures of .ltoreq.280.degree. C. and does not emit liquid or volatile components when heated.During application of the lift-off mask, a material is blanket vapor deposited at a substrate temperature ranging from about 160.degree. to 250.degree. C. on the resist pattern having openings with overhanging walls. Subsequently, the resist pattern is dissolved in a sodium metasilicate solution, causing the material vapor deposited thereon to be lifted off, with the material deposited on the substrate directly remaining.The lift-off mask is particularly suitable for generating conductor patterns on semiconductor substrates if low and uniform contact resistances between the conductor and the semiconductor material and a high degree of pattern accuracy and packing density are required.

    摘要翻译： 将含有弱碱和聚乙烯基苯酚作为成膜组分的正性抗蚀剂沉积在基材上，随后在小于10℃的温度下在KOH溶液中成像曝光，固化，覆盖曝光和显影。所得到的抗蚀剂图案为 暴露于波长范围为300至320nm的光，最后在150至280℃的温度下进行热处理。成品剥离掩模在280℃的温度下尺寸稳定，不会 在加热时放出液体或挥发性成分。 在施加剥离掩模的过程中，在具有具有突出壁的开口的抗蚀剂图案上，在大约160℃至250℃的衬底温度下，将材料进行毯式气相沉积。 随后，将抗蚀剂图案溶解在偏硅酸钠溶液中，使沉积在其上的材料被剥离，直接保留沉积在基板上的材料。 如果需要导体和半导体材料之间的低且均匀的接触电阻并且需要高度的图案精度和封装密度，则剥离掩模特别适用于在半导体基板上产生导体图案。

    Procedure and equipment for the manufacture of pipes with external and internal diameters varying in stages
    10.
    发明授权
    Procedure and equipment for the manufacture of pipes with external and internal diameters varying in stages 失效
    用于制造具有不同阶段的外部和内部直径的管道的程序和设备

    公开(公告)号：US4445354A

    公开(公告)日：1984-05-01

    申请号：US400788

    申请日：1982-07-22

    申请人： Gerd Pfeiffer ,  Horst Stinnertz ,  Fritz Zeunert

    发明人： Gerd Pfeiffer ,  Horst Stinnertz ,  Fritz Zeunert

    IPC分类号： B21B17/02 ,  B21B21/02 ,  B21B17/10

    CPC分类号： B21B21/02

    摘要： The present invention relates to a cold pilger rolling mill and a method and means for manufacturing tubes with externally and/or internally thickened portions by reducing the tubes over a mandrel by means of grooved rolls which are mounted in a reciprocating roll stand. The invention provides several different varying diameter grooves on the rolls, which grooves can be brought into play one after the other by rotation of the rolls through an adjustment of the toothed racks on which the rolls are mounted. Consequently, at least one groove is provided for the rolling out of the required cross-section of most of the tube and a second groove is provided for the rolling of a thickened portion of the tube. It is essential that a smoothing zone is associated with each groove, and a zone for rotating and advancing the tube is associated with at least one of the grooves.

    摘要翻译： 本发明涉及一种冷轧机轧机，以及一种通过借助于安装在往复式辊架中的带槽轧辊将管子放在心轴上来制造具有外部和/或内部加厚部分的管子的方法和装置。 本发明在辊上提供了几个不同的变化直径的凹槽，这些凹槽可以通过辊的旋转通过调节其上安装有辊的齿条而一个接一个地起作用。 因此，提供至少一个用于滚出大部分管的所需横截面的凹槽，并且为管的加厚部分的轧制提供第二凹槽。 平滑区域与每个凹槽相关是必要的，并且用于旋转和前进管的区域与至少一个凹槽相关联。