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12 条记录 (耗时 0.017 秒)

    Fuse, memory incorporating same and method
    1.
    发明授权
    Fuse, memory incorporating same and method 失效
    保险丝，内存相同和方法

    公开(公告)号：US06489244B2

    公开(公告)日：2002-12-03

    申请号：US09858290

    申请日：2001-05-15

    申请人： Roger Lee ,  Dennis Keller ,  Ralph Kauffman

    发明人： Roger Lee ,  Dennis Keller ,  Ralph Kauffman

    IPC分类号： H01L21311

    CPC分类号： H01L23/5258 ,  H01L2924/0002 ,  H01L2924/3011 ,  H01L2924/00

    摘要： A method of making a fuse and a fuse, together with systems and integrated circuits where the fuse provides benefits, are described. A fuse comprising a conductive material is formed on a substrate. A series of dielectric layers having a composite thickness is formed on the substrate and the fuse. The series of dielectric layers serves to insulate a series of conductive layers from each other. The conductive layers are disposed above portions of the substrate. An opening is formed extending through a passivation layer and the series of dielectric layers. The opening exposes a portion of the fuse. Another dielectric layer is formed on the fuse and the fuse may thereafter be programmed by directing a laser beam onto the fuse through the opening.

    摘要翻译： 描述了制作保险丝和保险丝的方法以及保险丝提供有益效果的系统和集成电路。 包括导电材料的熔断体形成在基板上。 在衬底和保险丝上形成具有复合厚度的一系列电介质层。 一系列介电层用于使一系列导电层彼此绝缘。 导电层设置在基板的上方。 延伸穿过钝化层和一系列介电层形成的开口。 开口露出一部分保险丝。 在保险丝上形成另一个电介质层，然后可以通过将激光束通过开口引导到保险丝上来对熔丝进行编程。

    Fuse, memory incorporating same and method
    2.
    发明授权
    Fuse, memory incorporating same and method 失效
    保险丝，内存相同和方法

    公开(公告)号：US06232210B1

    公开(公告)日：2001-05-15

    申请号：US09316998

    申请日：1999-05-24

    申请人： Roger Lee ,  Dennis Keller ,  Ralph Kauffman

    发明人： Roger Lee ,  Dennis Keller ,  Ralph Kauffman

    IPC分类号： H01L2128

    CPC分类号： H01L23/5258 ,  H01L2924/0002 ,  H01L2924/3011 ,  H01L2924/00

    摘要： A method of making a fuse and a fuse, together with systems and integrated circuits where the fuse provides benefits, are described. A fuse comprising a conductive material is formed on a substrate. A series of dielectric layers having a composite thickness is formed on the substrate and the fuse. The series of dielectric layers serves to insulate a series of conductive layers from each other. The conductive layers are disposed above portions of the substrate. An opening is formed extending through a passivation layer and the series of dielectric layers. The opening exposes a portion of the fuse. Another dielectric layer is formed on the fuse and the fuse may thereafter be programmed by directing a laser beam onto the fuse through the opening.

    摘要翻译： 描述了制作保险丝和保险丝的方法以及保险丝提供有益效果的系统和集成电路。 包括导电材料的熔断体形成在基板上。 在衬底和保险丝上形成具有复合厚度的一系列电介质层。 一系列介电层用于使一系列导电层彼此绝缘。 导电层设置在基板的上方。 延伸穿过钝化层和一系列介电层形成的开口。 开口露出一部分保险丝。 在保险丝上形成另一个电介质层，然后可以通过将激光束通过开口引导到保险丝上来对熔丝进行编程。

    Fuse, memory incorporating same and method
    3.
    发明授权
    Fuse, memory incorporating same and method 失效

    公开(公告)号：US6130468A

    公开(公告)日：2000-10-10

    申请号：US21968

    申请日：1998-02-11

    申请人： Roger Lee ,  Dennis Keller ,  Ralph Kauffman

    发明人： Roger Lee ,  Dennis Keller ,  Ralph Kauffman

    IPC分类号： H01L23/525 ,  H01L29/00 ,  H01L21/44

    CPC分类号： H01L23/5258 ,  H01L2924/0002 ,  H01L2924/3011

    摘要： A method of making a fuse and a fuse, together with systems and integrated circuits where the fuse provides benefits, are described. A fuse comprising a conductive material is formed on a substrate. A series of dielectric layers having a composite thickness is formed on the substrate and the fuse. The series of dielectric layers serves to insulate a series of conductive layers from each other. The conductive layers are disposed above portions of the substrate. An opening is formed extending through a passivation layer and the series of dielectric layers. The opening exposes a portion of the fuse. Another dielectric layer is formed on the fuse and the fuse may thereafter be programmed by directing a laser beam onto the fuse through the opening.

    Minimally spaced MRAM structures
    8.
    发明授权
    Minimally spaced MRAM structures 有权
    最小间隔的MRAM结构

    公开(公告)号：US06750069B2

    公开(公告)日：2004-06-15

    申请号：US10454479

    申请日：2003-06-05

    申请人： D. Mark Durcan ,  Trung T. Doan ,  Roger Lee ,  Dennis Keller ,  Ren Earl

    发明人： D. Mark Durcan ,  Trung T. Doan ,  Roger Lee ,  Dennis Keller ,  Ren Earl

    IPC分类号： H01L21336

    CPC分类号： H01L27/222 ,  B82Y10/00

    摘要： A method of forming minimally spaced apart MRAM structures is disclosed. A photolithography technique is employed to define patterns an integrated circuit, the width of which is further reduced by etching to allow formation of patterns used to etch digit line regions with optimum critical dimension between any of the two digit line regions. Subsequent pinned and sense layers of MRAM structures are formed over the minimally spaced digit regions.

    摘要翻译： 公开了形成最小间隔的MRAM结构的方法。 使用光刻技术来定义集成电路的图案，其集成电路的宽度通过蚀刻进一步减小，以允许形成用于蚀刻具有两个数字线区域中的任一个之间的最佳临界尺寸的数字线区域的图案。 在最小间隔的数字区域上形成随后的MRAM结构的固定和感测层。

    Minimally spaced MRAM structures
    10.
    发明授权
    Minimally spaced MRAM structures 有权
    最小间隔的MRAM结构

    公开(公告)号：US06885051B2

    公开(公告)日：2005-04-26

    申请号：US10823553

    申请日：2004-04-14

    申请人： D. Mark Durcan ,  Trung T. Doan ,  Roger Lee ,  Dennis Keller ,  Ren Earl

    发明人： D. Mark Durcan ,  Trung T. Doan ,  Roger Lee ,  Dennis Keller ,  Ren Earl

    IPC分类号： H01L21/8246 ,  H01L27/22 ,  H01L31/062 ,  H01L31/036

    CPC分类号： H01L27/222 ,  B82Y10/00

    摘要： A method of forming minimally spaced apart MRAM structures is disclosed. A photolithography technique is employed to define patterns an integrated circuit, the width of which is further reduced by etching to allow formation of patterns used to etch digit line regions with optimum critical dimension between any of the two digit line regions. Subsequent pinned and sense layers of MRAM structures are formed over the minimally spaced digit regions.

    摘要翻译： 公开了形成最小间隔的MRAM结构的方法。 使用光刻技术来定义集成电路的图案，其集成电路的宽度通过蚀刻进一步减小，以允许形成用于蚀刻具有两个数字线区域中的任一个之间的最佳临界尺寸的数字线区域的图案。 在最小间隔的数字区域上形成随后的MRAM结构的固定和感测层。