公开(公告)号：US09001558B2

公开(公告)日：2015-04-07

申请号：US14000285

申请日：2012-02-03

申请人： Roland Daniel Rosezin ,  Florian Lentz ,  Rainer Bruchhaus ,  Eike Linn ,  Ilia Valov ,  Rainer Waser ,  Stefan Tappertzhofen ,  Lutz Nielen

发明人： Roland Daniel Rosezin ,  Florian Lentz ,  Rainer Bruchhaus ,  Eike Linn ,  Ilia Valov ,  Rainer Waser ,  Stefan Tappertzhofen ,  Lutz Nielen

IPC分类号： G11C11/00 ,  G11C13/00

CPC分类号： G11C13/004 ,  G11C13/0007 ,  G11C13/0061 ,  G11C2013/0073 ,  G11C2213/73 ,  G11C2213/76

摘要： A method for reading out a memory element comprises a series connection. of at least two memory cells A and B each have a stable state A0 or B0 having higher resistance and a stable state A1 or B1 having lower electrical resistance. An electrical variable of the series circuit is measured and an electrical variable is selected for this measurement, to which the memory cell A in state A0 makes a different contribution than the memory cell B in state B0 and/or to which the memory cell A instate A1 makes a different contribution than the memory cell B in state B1. The two state combinations A1 and B0 or A0 and B1 then result in differing values for the electrical variable that is measured by way of the series circuit. These state combinations can thus be distinguished from each other without having to change the logic state of the memory element during reading.

摘要翻译： 读出存储元件的方法包括串联连接。 至少两个存储单元A和B各自具有具有较高电阻的稳定状态A0或B0以及具有较低电阻的稳定状态A1或B1。 测量串联电路的电变量，并为此测量选择电变量，状态A0中的存储单元A与状态B0中的存储单元B和/或存储单元A设置的存储单元A的贡献不同 A1在状态B1中与存储单元B的贡献不同。 两个状态组合A1和B0或A0和B1然后导致通过串联电路测量的电变量的不同值。 因此，这些状态组合可以彼此区分，而不必在读取期间改变存储元件的逻辑状态。

公开(公告)号：US20140036574A1

公开(公告)日：2014-02-06

申请号：US14000285

申请日：2012-02-03

申请人： Roland Daniel Rosezin ,  Florian Lentz ,  Rainer Bruchhaus ,  Eike Linn ,  Ilia Valov ,  Rainer Waser ,  Stefan Tappertzhofen ,  Lutz Nielen

发明人： Roland Daniel Rosezin ,  Florian Lentz ,  Rainer Bruchhaus ,  Eike Linn ,  Ilia Valov ,  Rainer Waser ,  Stefan Tappertzhofen ,  Lutz Nielen

IPC分类号： G11C13/00

CPC分类号： G11C13/004 ,  G11C13/0007 ,  G11C13/0061 ,  G11C2013/0073 ,  G11C2213/73 ,  G11C2213/76

摘要： A method for reading out a memory element comprises a series connection. of at least two memory cells A and B each have a stable state A0 or B0 having higher resistance and a stable state A1 or B1 having lower electrical resistance. An electrical variable of the series circuit is measured and an electrical variable is selected for this measurement, to which the memory cell A in state A0 makes a different contribution than the memory cell B in state B0 and/or to which the memory cell A instate A1 makes a different contribution than the memory cell B in state B1. The two state combinations A1 and B0 or A0 and B1 then result in differing values for the electrical variable that is measured by way of the series circuit. These state combinations can thus be distinguished from each other without having to change the logic state of the memory element during reading.

摘要翻译： 读出存储元件的方法包括串联连接。 至少两个存储单元A和B各自具有具有较高电阻的稳定状态A0或B0以及具有较低电阻的稳定状态A1或B1。 测量串联电路的电变量，并且为该测量选择电变量，状态A0中的存储单元A与状态B0中的存储单元B和/或存储单元A设置的存储单元A的贡献不同 A1在状态B1中与存储单元B的贡献不同。 两个状态组合A1和B0或A0和B1然后导致通过串联电路测量的电变量的不同值。 因此，这些状态组合可以彼此区分，而不必在读取期间改变存储元件的逻辑状态。