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1.发明申请Process for producing a silicon single crystal with controlled carbon content 审中-公开制备具有可控碳含量的硅单晶的方法公开(公告)号：US20060174817A1
公开(公告)日：2006-08-10
申请号：US11349707
申请日：2006-02-08
IPC分类号： H01L21/322
摘要： Process for producing a silicon single crystal with controlled carbon content, polycrystalline silicon being melted in a crucible to form a silicon melt, a stream of inert gas with a flow rate being directed onto the melting polycrystalline silicon, and the single crystal is pulled from the melt in accordance with the Czochralski method, wherein the flow rate of the inert gas stream is controlled in order to set a concentration of carbon in the melt.
摘要翻译： 用于生产具有可控碳含量的硅单晶的方法，多晶硅在坩埚中熔化以形成硅熔体，将流速指向熔融多晶硅的惰性气体流，并将单晶从 根据切克劳斯基法进行熔融，其中控制惰性气体流的流速以便设定熔体中的碳浓度。
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2.发明申请Process for producing highly doped semiconductor wafers, and dislocation-free highly doped semiconductor wafers 失效用于生产高掺杂半导体晶片的方法和无位错高掺杂半导体晶片公开(公告)号：US20050167001A1
公开(公告)日：2005-08-04
申请号：US11043574
申请日：2005-01-26
IPC分类号： H01L21/24 , C30B15/04 , C30B29/02 , C30B29/06 , C30B29/08 , C30B29/52 , H01L21/02 , H01L29/167 , C30B15/00 , H01L21/26 , H01L29/00
CPC分类号： C30B29/52 , C30B15/04 , C30B29/06 , C30B29/08 , H01L29/167 , Y10S438/914 , Y10T428/21
摘要： The invention relates to a process for producing highly doped semiconductor wafers, in which at least two dopants which are electrically active and belong to the same group of the periodic system of the elements are used for the doping. The invention also relates to a semiconductor wafer which is free of dislocations and is doped with at least two electrically active dopants which belong to the same group of the periodic system of the elements.
摘要翻译： 本发明涉及用于制造高掺杂半导体晶片的方法，其中使用至少两种具有电活性且属于元素周期系统的同一组的掺杂剂用于掺杂。 本发明还涉及一种不含位错的半导体晶片，并掺杂有至少两种属于元件周期性系统的同一组的电活性掺杂剂。
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3.发明授权Process for producing highly doped semiconductor wafers, and dislocation-free highly doped semiconductor wafers 失效用于生产高掺杂半导体晶片的方法和无位错高掺杂半导体晶片公开(公告)号：US07341787B2
公开(公告)日：2008-03-11
申请号：US11043574
申请日：2005-01-26
CPC分类号： C30B29/52 , C30B15/04 , C30B29/06 , C30B29/08 , H01L29/167 , Y10S438/914 , Y10T428/21
摘要： The invention relates to a process for producing highly doped semiconductor wafers, in which at least two dopants which are electrically active and belong to the same group of the periodic system of the elements are used for the doping. The invention also relates to a semiconductor wafer which is free of dislocations and is doped with at least two electrically active dopants which belong to the same group of the periodic system of the elements.
摘要翻译： 本发明涉及用于制造高掺杂半导体晶片的方法，其中使用至少两种具有电活性且属于元素周期系统的同一组的掺杂剂用于掺杂。 本发明还涉及一种不含位错的半导体晶片，并掺杂有至少两种属于元件周期性系统的同一组的电活性掺杂剂。
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公开(公告)号：US06660082B2
公开(公告)日：2003-12-09
申请号：US09782999
申请日：2001-02-14
IPC分类号： C30B1504
CPC分类号： C30B15/04 , Y10T117/10 , Y10T117/1032 , Y10T117/1056
摘要： A method for doping a melt with a dopant has the melt being provided in a crucible. The dopant is introduced into a vessel and the vessel is immersed in the melt, the dopant being transferred into the melt through an opening which forms in the vessel. There is also an apparatus which comprises a vessel containing the dopant and a device which is connected to the vessel, for lowering the vessel into a melt and for lifting the vessel out of the melt, the vessel being provided with an opening which is blocked by a closure piece which is of the same type of material as the melt and melts when it is brought into contact with the melt.
摘要翻译： 用掺杂剂掺杂熔体的方法将熔体设置在坩埚中。 将掺杂剂引入容器中并将容器浸入熔体中，通过在容器中形成的开口将掺杂剂转移到熔体中。 还有一种设备，其包括容纳掺杂剂的容器和连接到容器的装置，用于将容器降低成熔体并将容器从熔体中提出，容器设有一个开口，该开口被 与熔体相同类型的封闭件，当与熔体接触时熔化。
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公开(公告)号：US09988739B2
公开(公告)日：2018-06-05
申请号：US13014804
申请日：2011-01-27
CPC分类号： C30B29/06 , C30B15/14 , Y10T428/298
摘要： Silicon single crystals are pulled from a melt in a crucible, the single crystal surrounded by a heat shield, the lower end of which is a distance h from the melt surface, wherein gas flows downward between the single crystal and the heat shield, outward between the lower end of the heat shield and the melt, and then upward in the region outside the heat shield. The internal diameter of the heat shield at its lower end is 55 mm or more than the diameter of the single crystal, and the radial width of the heat shield at its lower end is not more than 20% of the diameter of the single crystal. Highly doped single crystals pulled accordingly have a void concentration ≤50 m−3.
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6.发明申请Method For Pulling A Single Crystal Composed Of Silicon From A Melt Contained In A Crucible, and Single Crystal Produced Thereby 有权从坩埚中包含的熔体和由此产生的单晶中拉取由硅组成的单晶的方法公开(公告)号：US20110195251A1
公开(公告)日：2011-08-11
申请号：US13014804
申请日：2011-01-27
CPC分类号： C30B29/06 , C30B15/14 , Y10T428/298
摘要： Silicon single crystals are pulled from a melt in a crucible, the single crystal surrounded by a heat shield, the lower end of which is a distance h from the melt surface, wherein gas flows downward between the single crystal and the heat shield, outward between the lower end of the heat shield and the melt, and then upward in the region outside the heat shield. The internal diameter of the heat shield at its lower end is 55 mm or more than the diameter of the single crystal, and the radial width of the heat shield at its lower end is not more than 20% of the diameter of the single crystal. Highly doped single crystals pulled accordingly have a void concentration ≦50 m−3.
摘要翻译： 硅单晶从坩埚中的熔体中拉出，单晶由隔热罩包围，其下端距离熔体表面有一个距离h，其中气体在单晶和隔热罩之间向下流动， 隔热罩的下端和熔体，然后在隔热罩外面的区域向上。 隔热罩下端的内径为单晶直径的55mm以上，其下端的隔热罩的径向宽度不大于单晶直径的20％。 相应地，高度掺杂的单晶具有空隙浓度nlE; 50m-3。
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7.发明授权公开(公告)号：US07070649B2
公开(公告)日：2006-07-04
申请号：US10690415
申请日：2003-10-21
IPC分类号： C30B15/20
摘要： A process for producing a doped silicon single crystal, comprising after-doping the melt during the pulling process with a quantity of volatile dopant ΔN(t), calculated according to the equation ΔN(t)=N0−N(t)=N0·(1−e−λa·t) or according to the approximation equation ΔN(t)=N0·λa·t where λa is an evaporation coefficient which describes process-specific evaporation behavior of the foreign substance and which is obtained after a resistance profile R(t) of a further single crystal has been measured and calculated according to the equation R(t)=R0·eλa·t, where R0 is a starting resistivity and the further single crystal is pulled under the same process conditions without being after-doped with the foreign substance.
摘要翻译： 一种制造掺杂硅单晶的方法，包括在拉伸过程中用一定量的挥发性掺杂剂ΔN（t）对熔体进行后掺杂，根据方程式<？in-line-formula description =“In-Line Formulas “end =”lead“？> DeltaN（t）= N 0 -N（t）= N 0（1-e-O） >
a .t ）<？in-line-formula description =“In-line Formulas”end =“tail”？>或根据 到近似方程式<？in-line-formula description =“In-line Formulas”end =“lead”？> DeltaN（t）= N <？in-line-formula description =“In-line Formulas”end =“tail”？>其中lambda是一个蒸发系数，它描述异物的过程特定的蒸发行为， 已经根据方程式<？in-line-formula description =“In-line Formulas”end =“lead”？> R（t）= 1）测量并计算另一单晶的电阻分布R（t） R＆lt; 0＆lt;＆lt; SU > .t ，<？in-line-formula description =“In-line Formulas”end =“ 尾“→其中R 0 <0>是起始电阻率，并且在相同的工艺条件下拉伸另外的单晶而不用异物进行后掺杂。 -
公开(公告)号：US06461582B2
公开(公告)日：2002-10-08
申请号：US09834571
申请日：2001-04-13
IPC分类号： C01B2326
摘要： A single-crystal rod, obtained using CZ crucible pulling, has a crystal cone and a cylindrical single-crystal rod, and the crystal cone has an apex angle of 30° to 90°. There is also a process for producing dislocation-free single-crystal rods using CZ crucible pulling in which a seed crystal is immersed in a melt and is pulled out again, and a cone with an apex angle of from 30° to 90° is pulled.
摘要翻译： 使用CZ坩埚拉拔获得的单晶棒具有晶体锥形和圆柱形单晶棒，并且晶体锥体的顶角为30°至90°。 还有一种使用CZ坩埚拉制制造无位错单晶棒的方法，其中将晶种浸入熔体中并再次拉出，并且拉拔顶角为30°至90°的锥体 。
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