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    Magnetic bubble device
    2.
    发明授权
    Magnetic bubble device 失效
    磁性气泡装置

    公开(公告)号：US4621344A

    公开(公告)日：1986-11-04

    申请号：US669427

    申请日：1984-11-08

    申请人： Toshihiro Sato ,  Ryo Suzuki ,  Tadashi Ikeda ,  Teruaki Takeuchi ,  Yutaka Sugita

    发明人： Toshihiro Sato ,  Ryo Suzuki ,  Tadashi Ikeda ,  Teruaki Takeuchi ,  Yutaka Sugita

    IPC分类号： G11C11/14 ,  G11C19/08

    CPC分类号： G11C19/0816

    摘要： A magnetic bubble device has minor loops formed through ion implantation and used for storing information. As the density becomes higher, inside turn corner portions are formed on the minor loops. Dummy patterns having circular, triangular or other shapes are disposed in the vicinity of the corner portion. It is desirable that the minimum distance X between the dummy pattern and the propagation track satisfy the relation of 1.5 D.ltoreq.X.ltoreq.3.5 D, where D represents the diameter of a bubble.

    摘要翻译： 磁性气泡装置具有通过离子注入形成的较小的环，用于存储信息。 随着密度变高，在小环上形成内转角部。 具有圆形，三角形或其他形状的虚拟图案设置在角部附近。 期望虚拟图案和传播轨迹之间的最小距离X满足1.5D≤X≤3.5D的关系，其中D表示气泡的直径。

    Magnetic bubble memory device
    5.
    发明授权
    Magnetic bubble memory device 失效
    磁性气泡记忆装置

    公开(公告)号：US4559617A

    公开(公告)日：1985-12-17

    申请号：US635169

    申请日：1984-07-27

    申请人： Toshihiro Sato ,  Ryo Suzuki ,  Tadashi Ikeda ,  Masatoshi Takeshita ,  Yutaka Sugita

    发明人： Toshihiro Sato ,  Ryo Suzuki ,  Tadashi Ikeda ,  Masatoshi Takeshita ,  Yutaka Sugita

    IPC分类号： G11C11/14 ,  G11C19/08 ,  H01F41/34

    CPC分类号： G11C19/0816 ,  H01F41/34

    摘要： A high density magnetic bubble memory device comprises first magnetic bubble propagation tracks formed through ion implantation and second magnetic bubble propagation tracks formed of a soft magnetic material. Regions exclusive of those destined for realization of the second magnetic bubble propagation tracks are deeply ion-implanted. Gaps between the adjacent soft magnetic material films are also deeply ion-implanted. The second magnetic bubble propagation tracks may be shallowly ion-implanted or not implanted with ions.

    摘要翻译： 高密度磁气泡存储装置包括通过离子注入形成的第一磁气体传播路径和由软磁材料形成的第二磁气泡传播路径。 深入离子注入用于实现第二磁性气泡传播轨迹的区域。 相邻的软磁性材料膜之间的间隙也被深度离子注入。 第二个磁性气泡传播轨迹可以是浅离子注入的，也可以不用离子注入。

    Method of fabricating magnetic bubble memory device
    8.
    发明授权
    Method of fabricating magnetic bubble memory device 失效
    制造磁性气泡记忆装置的方法

    公开(公告)号：US4556583A

    公开(公告)日：1985-12-03

    申请号：US375216

    申请日：1982-05-05

    申请人： Ryo Imura ,  Tadashi Ikeda ,  Teruaki Takeuchi ,  Norio Ohta ,  Yutaka Sugita

    发明人： Ryo Imura ,  Tadashi Ikeda ,  Teruaki Takeuchi ,  Norio Ohta ,  Yutaka Sugita

    IPC分类号： G11C11/14 ,  H01F41/14 ,  H01F41/32 ,  B05D3/06 ,  G11C19/08

    CPC分类号： H01F41/32 ,  H01F41/14

    摘要： A method of fabricating a magnetic bubble memory device is disclosed in which a desired portion of a surface region in a magnetic bubble film for magnetic bubbles is implanted with hydrogen ions with an ion dose of 2.5.times.10.sup.16 to 1.times.10.sup.17 cm.sup.-2, the surface of magnetic bubble film thus formed is covered with a film, and then the magnetic bubble film is annealed. According to this method, a reduction in propagation margin due to annealing is effectively prevented, and it is possible to form a magnetic bubble memory device of the contiguous disk type which is excellent in thermal stability.

    摘要翻译： 公开了一种制造磁性气泡存储装置的方法，其中用于磁性气泡的磁性气泡膜中的表面区域的期望部分用离子剂量为2.5×10 16至1×10 17 cm -2的氢离子注入，磁性表面 由此形成的气泡膜被膜覆盖，然后使气泡膜退火。 根据该方法，有效地防止了由于退火导致的传播余量的降低，并且可以形成热稳定性优异的连续盘型的气泡存储装置。

    Magnetic bubble memory device
    9.
    发明授权
    Magnetic bubble memory device 失效
    磁性气泡记忆装置

    公开(公告)号：US4607349A

    公开(公告)日：1986-08-19

    申请号：US514668

    申请日：1983-07-18

    申请人： Ryo Suzuki ,  Masatoshi Takeshita ,  Teruaki Takeuchi ,  Naoki Kodama ,  Yutaka Sugita

    发明人： Ryo Suzuki ,  Masatoshi Takeshita ,  Teruaki Takeuchi ,  Naoki Kodama ,  Yutaka Sugita

    IPC分类号： G11C11/14 ,  G11C19/08

    CPC分类号： G11C19/0816

    摘要： A highly density magnetic bubble memory device has bubble propagation paths having different pattern periods. The distance between a propagation path having shorter period and a magnetic film for holding magnetic bubbles is made smaller than that between propagation path having longer period and the magnetic film. An insulating layer formed between the propagation path and the magnetic film through another insulating layer has a declining slope having an angle of 60.degree. or less, thereby ensuring steady propagation of the magnetic bubbles along the propagation path.

    摘要翻译： 高密度磁气泡存储装置具有不同图案周期的气泡传播路径。 使具有较短周期的传播路径和用于保持磁性气泡的磁性膜之间的距离小于具有较长周期的传播路径与磁性膜之间的距离。 通过另一绝缘层在传播路径和磁性膜之间形成的绝缘层具有60度以下角度的下降斜率，从而确保磁性气泡沿传播路径的稳定传播。

    Magnetic bubble memory device
    10.
    发明授权
    Magnetic bubble memory device 失效
    磁性气泡记忆装置

    公开(公告)号：US4601013A

    公开(公告)日：1986-07-15

    申请号：US706182

    申请日：1985-02-27

    申请人： Ryo Suzuki ,  Yutaka Sugita ,  Naoki Kodama ,  Masatoshi Takeshita ,  Teruaki Takeuchi

    发明人： Ryo Suzuki ,  Yutaka Sugita ,  Naoki Kodama ,  Masatoshi Takeshita ,  Teruaki Takeuchi

    IPC分类号： G11C11/14 ,  G11C19/08

    CPC分类号： G11C19/0891 ,  G11C19/0883

    摘要： Disclosed is a magnetic bubble memory device having a first bubble propagation path formed in an ion-implantation pattern and a second bubble propagation path made of permalloy elments in combination. The majority of the area for forming the second propagation path is processed by ion implantation in lower density and to smaller depth than those of ion implantation for forming the first propagation path on the surface of a bubble supporting layer.

    摘要翻译： 公开了具有以离子注入图案形成的第一气泡传播路径和由坡莫合金组合的第二气泡传播路径的磁性气泡存储装置。 用于形成第二传播路径的大部分区域通过离子注入以比用于在气泡支撑层的表面上形成第一传播路径的离子注入更低的密度和更小的深度进行处理。