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21 条记录 (耗时 0.021 秒)

    Method of fabricating magnetic bubble memory device
    1.
    发明授权
    Method of fabricating magnetic bubble memory device 失效
    制造磁性气泡记忆装置的方法

    公开(公告)号：US4556583A

    公开(公告)日：1985-12-03

    申请号：US375216

    申请日：1982-05-05

    申请人： Ryo Imura ,  Tadashi Ikeda ,  Teruaki Takeuchi ,  Norio Ohta ,  Yutaka Sugita

    发明人： Ryo Imura ,  Tadashi Ikeda ,  Teruaki Takeuchi ,  Norio Ohta ,  Yutaka Sugita

    IPC分类号： G11C11/14 ,  H01F41/14 ,  H01F41/32 ,  B05D3/06 ,  G11C19/08

    CPC分类号： H01F41/32 ,  H01F41/14

    摘要： A method of fabricating a magnetic bubble memory device is disclosed in which a desired portion of a surface region in a magnetic bubble film for magnetic bubbles is implanted with hydrogen ions with an ion dose of 2.5.times.10.sup.16 to 1.times.10.sup.17 cm.sup.-2, the surface of magnetic bubble film thus formed is covered with a film, and then the magnetic bubble film is annealed. According to this method, a reduction in propagation margin due to annealing is effectively prevented, and it is possible to form a magnetic bubble memory device of the contiguous disk type which is excellent in thermal stability.

    摘要翻译： 公开了一种制造磁性气泡存储装置的方法，其中用于磁性气泡的磁性气泡膜中的表面区域的期望部分用离子剂量为2.5×10 16至1×10 17 cm -2的氢离子注入，磁性表面 由此形成的气泡膜被膜覆盖，然后使气泡膜退火。 根据该方法，有效地防止了由于退火导致的传播余量的降低，并且可以形成热稳定性优异的连续盘型的气泡存储装置。

    Ion-implanted magnetic bubble device and a method of manufacturing the same
    5.
    发明授权
    Ion-implanted magnetic bubble device and a method of manufacturing the same 失效
    离子注入磁鼓装置及其制造方法

    公开(公告)号：US4701385A

    公开(公告)日：1987-10-20

    申请号：US680891

    申请日：1984-12-12

    申请人： Ryo Imura ,  Tadashi Ikeda ,  Yutaka Sugita

    发明人： Ryo Imura ,  Tadashi Ikeda ,  Yutaka Sugita

    IPC分类号： G11C11/14 ,  G11C19/08 ,  H01F41/22 ,  B32B9/00

    CPC分类号： G11C19/0808 ,  H01F41/22 ,  Y10S428/90

    摘要： In a magnetic bubble device, a strain layer formed on the surface of a magnetic bubble garnet film by ion-implantation is required to have anisotropy field of great strength in the in-plane direction for driving magnetic bubbles. For preventing the effective anisotropy field change from being decreased by heat treatment, ion species having large mass and projected standard deviation not greater than 1000 .ANG. are implanted. The ion species are preferably selected from He to Kr in the periodic table. The heat treatment is effected at a temperature in a range of 450.degree. C. to 900.degree. C.

    摘要翻译： 在气泡装置中，通过离子注入形成在石英石墨膜的表面上的应变层需要具有用于驱动磁性气泡的面内方向上的强度的各向异性场。 为了防止通过热处理而降低有效各向异性场的变化，植入具有大质量的离子种类和不超过1000安培的投影标准偏差。 离子种类优选选自周期表中的He至Kr。 热处理在450〜900℃的温度范围内进行。

    Control method of magnetic anisotropy and device utilizing the control method
    7.
    发明授权
    Control method of magnetic anisotropy and device utilizing the control method 失效
    磁各向异性的控制方法和利用控制方法的装置

    公开(公告)号：US4600488A

    公开(公告)日：1986-07-15

    申请号：US691128

    申请日：1985-01-14

    申请人： Ryo Imura ,  Yutaka Sugita ,  Noriyuki Kumasaka

    发明人： Ryo Imura ,  Yutaka Sugita ,  Noriyuki Kumasaka

    IPC分类号： C23C14/48 ,  G11B5/147 ,  G11B5/31 ,  G11B11/105 ,  H01F41/14 ,  H01F41/18 ,  H01F41/16

    CPC分类号： G11B11/10586 ,  G11B5/147 ,  G11B5/3163 ,  H01F41/18

    摘要： There have been known various methods for controlling the magnetic anisotropy of a magnetic film with a magnetic field being applied thereto. In accordance with the present invention, the magnetic anisotropy is controlled by implanting ions into the magnetic film while applying a magnetic field thereto. The direction for applying the magnetic field can be arbitrarily selected, for example, along an inplane direction of the magnetic film and along a direction vertical thereto. The magnetic anisotropy can be controlled only in the desired areas by limiting the areas to which ions are implanted with a mask disposed on the magnetic film.

    摘要翻译： 已知有各种用于控制施加磁场的磁性膜的磁各向异性的方法。 根据本发明，通过在向其施加磁场的同时将离子注入磁膜来控制磁各向异性。 施加磁场的方向可以例如沿着磁性膜的面内方向并且沿垂直于其的方向任意选择。 通过用设置在磁性膜上的掩模限制离子注入的区域，可以仅在期望的区域中控制磁各向异性。

    Mask structure having phase shifting pattern suitable for forming fine pattern on photosensitive film and method of manufacturing solid-state devices using such mask structure
    10.
    发明授权
    Mask structure having phase shifting pattern suitable for forming fine pattern on photosensitive film and method of manufacturing solid-state devices using such mask structure 失效
    具有适于在感光膜上形成精细图案的相移图案的掩模结构以及使用这种掩模结构制造固态器件的方法

    公开(公告)号：US5604059A

    公开(公告)日：1997-02-18

    申请号：US290603

    申请日：1994-08-15

    申请人： Ryo Imura ,  Yoshinori Hoshina ,  Kengo Asai ,  Mitsutaka Hikita ,  Atsushi Isobe ,  Ryo Suzuki ,  Kohji Oda ,  Kazuyuki Sakiyama

    发明人： Ryo Imura ,  Yoshinori Hoshina ,  Kengo Asai ,  Mitsutaka Hikita ,  Atsushi Isobe ,  Ryo Suzuki ,  Kohji Oda ,  Kazuyuki Sakiyama

    IPC分类号： G03F1/00 ,  G03F1/30 ,  G03F1/68 ,  G03F7/20 ,  H01L21/027 ,  H01L21/30 ,  H03H3/08 ,  G03F7/12

    CPC分类号： G03F7/70466 ,  G03F1/30 ,  G03F1/50 ,  G03F7/2002

    摘要： A mask structure has two (or more) groups of device patterns formed on one transparent support plate. Each of the device patterns has a transparent partial pattern. One or both of the groups of device patterns are provided with phase shifting patterns for improvement of the resolution in the lithography. The transparent partial pattern in each of the device patterns in each of the device pattern groups is determined such that each of the transparent partial patterns held by one of the device pattern groups is adapted for combination with one transparent partial pattern held by the other device pattern group by two or more times of transmission of an exposure beam through the mask structure. Manufacturing of solid-state devices is possible by use of the mask structure, in which exposure of a photo-sensitive film on a substrate to an exposure beam through the mask structure is repeated two or more times with a relative position between the mask structure and the substrate being changed.

    摘要翻译： 掩模结构具有形成在一个透明支撑板上的两个（或多个）装置图案组。 每个设备图案具有透明部分图案。 装置图案组中的一个或两个设置有用于改进光刻中的分辨率的相移图案。 确定每个设备图案组中的每个设备图案中的每个设备图案中的透明部分图案，使得由设备图案组之一保持的每个透明部分图案适于与由另一设备图案保持的一个透明部分图案组合 通过掩模结构将曝光光束透射两次或更多次。 可以通过使用掩模结构来制造固体器件，其中通过掩模结构将基片上的感光膜暴露于曝光光束，通过掩模结构与掩模结构之间的相对位置重复两次或更多次 衬底被改变。