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公开(公告)号：US07274224B2
公开(公告)日：2007-09-25
申请号：US11183808
申请日：2005-07-19
申请人： Ryoichi Nagayoshi
发明人： Ryoichi Nagayoshi
IPC分类号： H03K3/00
摘要： The present invention provides a semiconductor device that can adjust signal frequency bandwidths and consumption currents to be appropriately increased or reduced in source-follower amplifiers in all stages. The semiconductor device is comprised of a source-follower amplifier including a driver transistor D1, and a load transistor L1 that is connected to the driver transistor D1 and driven variably depending on a signal inputted to the driver transistor, wherein a gate of the load transistor L1 is applied with a variable bias voltage. The semiconductor device 1 is further comprised of a source-follower amplifier including a driver transistor D2, and a load circuit (load transistor L2) that is connected to said second driver transistor and driven variably depending on a signal outputted from the second driver transistor D2, wherein a gate of the load transistor L2 is applied with a variable bias voltage to vary a resistance value of the load transistor L2.
摘要翻译： 本发明提供一种半导体器件，其可以在所有阶段中调整信号频率带宽和消耗电流以适当地增加或减少源跟随放大器。 半导体器件由包括驱动晶体管D1的源极跟随放大器和连接到驱动晶体管D1的负载晶体管L 1组成，并且根据输入到驱动晶体管的信号可变地驱动，其中栅极 负载晶体管L 1被施加可变偏置电压。 半导体器件1还包括源极跟随器放大器，其包括驱动晶体管D 2和负载电路（负载晶体管L 2），负载电路（负载晶体管L 2）连接到所述第二驱动晶体管，并根据从第二驱动器输出的信号 晶体管D 2，其中负载晶体管L 2的栅极被施加可变偏置电压以改变负载晶体管L 2的电阻值。
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公开(公告)号：US20060022708A1
公开(公告)日：2006-02-02
申请号：US11183808
申请日：2005-07-19
申请人： Ryoichi Nagayoshi
发明人： Ryoichi Nagayoshi
IPC分类号： H03K19/094
摘要： The present invention provides a semiconductor device that can adjust signal frequency bandwidths and consumption currents to be appropriately increased or reduced in source-follower amplifiers in all stages. The semiconductor device is comprised of a source-follower amplifier including a driver transistor D1, and a load transistor L1 that is connected to the driver transistor D1 and driven variably depending on a signal inputted to the driver transistor, wherein a gate of the load transistor L1 is applied with a variable bias voltage. The semiconductor device 1 is further comprised of a source-follower amplifier including a driver transistor D2, and a load circuit (load transistor L2) that is connected to said second driver transistor and driven variably depending on a signal outputted from the second driver transistor D2, wherein a gate of the load transistor L2 is applied with a variable bias voltage to vary a resistance value of the load transistor L2.
摘要翻译： 本发明提供一种半导体器件，其可以在所有阶段中调整信号频率带宽和消耗电流以适当地增加或减少源跟随放大器。 半导体器件由包括驱动晶体管D1的源极跟随放大器和连接到驱动晶体管D1的负载晶体管L 1组成，并且根据输入到驱动晶体管的信号可变地驱动，其中栅极 负载晶体管L 1被施加可变偏置电压。 半导体器件1还包括源极跟随器放大器，其包括驱动晶体管D 2和负载电路（负载晶体管L 2），负载电路（负载晶体管L 2）连接到所述第二驱动晶体管，并根据从第二驱动器输出的信号 晶体管D 2，其中负载晶体管L 2的栅极被施加可变偏置电压以改变负载晶体管L 2的电阻值。
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公开(公告)号：US07078258B2
公开(公告)日：2006-07-18
申请号：US10847443
申请日：2004-05-18
IPC分类号： H01L21/00
CPC分类号： H01L27/14603 , H01L27/1462 , H01L27/14627 , H01L31/02164
摘要： In a manufacturing method of an image sensor, a lightproof film (an antireflective film for avoiding flares) is formed over a wiring area; a transparent film is formed over an imaging area using a material capable of patterning; a transparent film, for forming micro lense on top, is formed on the transparent film, wherein a height of the top surfaces of the transparent film and the lightproof film are evenly formed.
摘要翻译： 在图像传感器的制造方法中，在配线区域上形成有防光膜（用于避免耀斑的防反射膜） 使用能够图案化的材料在成像区域上形成透明膜; 在透明膜上形成用于在顶部形成微透镜的透明膜，其中透明膜和防光膜的顶表面的高度均匀地形成。
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公开(公告)号：US20050068435A1
公开(公告)日：2005-03-31
申请号：US10953509
申请日：2004-09-30
IPC分类号： H04N5/232 , H04N5/225 , H04N5/235 , H04N5/243 , H04N5/30 , H04N5/335 , H04N5/351 , H04N5/369 , H04N5/376 , H04N9/04
CPC分类号： H04N9/045 , H04N5/2351 , H04N5/243
摘要： A solid-state image sensor includes photoelectric converters positioned either in a complementary color filter array or in the Bayer color filter array. The solid-state image sensor either adds together electric charges obtained by 9 photoelectric converters that relate to one color in each portion of six rows and six columns of the photoelectric converters so as to output a resulting electric charge as one pixel, or outputs the electric charges obtained by 9 photoelectric converters that relate to one color as 9 pixels without added together. By adding together the electric charges, the resolution of an image becomes one ninth of the case where the electric charges are not added together, and the sensitivity becomes 9 times higher than the same. The control unit not shown in the drawing determines a time length for photoelectric conversion assuming that the electric charges are not added together. If the determined time length is longer than a predetermined threshold, the actual time length for photoelectric conversion is reduced to {fraction (1/9)} of the determined time length, and an image is generated based on the resulting electric charges that are outputted after the electric charges stored in the photoelectric converters are added together.
摘要翻译： 固态图像传感器包括位于补色滤光片阵列或拜耳滤色器阵列中的光电转换器。 固态图像传感器将由光电转换器的六行六列的每一部分中的一种颜色相关的9个光电转换器获得的电荷相加，从而将所得电荷输出为一个像素，或者输出电 由9个光电转换器获得的与一个颜色相关的9个像素而不添加在一起的电荷。 通过将电荷加在一起，图像的分辨率成为电荷不相加的情况的九分之一，并且灵敏度比其高9倍。 图中未示出的控制单元确定假设电荷不相加在一起的光电转换的时间长度。 如果确定的时间长度大于预定阈值，则光电转换的实际时间长度减小到{分数（所确定的时间长度的1/9），并且基于所产生的电荷之后输出的图像 存储在光电转换器中的电荷被加在一起。
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公开(公告)号：US07466001B2
公开(公告)日：2008-12-16
申请号：US11394117
申请日：2006-03-31
IPC分类号： H01L27/14 , H01L31/00 , H01L31/0232 , H01L31/0203
CPC分类号： H01L27/14603 , H01L27/1462 , H01L27/14627 , H01L31/02164
摘要： In a manufacturing method of an image sensor, a lightproof film (an antireflective film for avoiding flares) is formed over a wiring area; a transparent film is formed over an imaging area using a material capable of patterning; a transparent film, for forming micro lenses on top, is formed on the transparent film, wherein a height of the top surfaces of the transparent film and the lightproof film are evenly formed.
摘要翻译： 在图像传感器的制造方法中，在配线区域上形成有防光膜（用于避免耀斑的防反射膜） 使用能够图案化的材料在成像区域上形成透明膜; 在透明膜上形成用于在顶部形成微透镜的透明膜，其中透明膜和防光膜的上表面的高度均匀地形成。
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6.发明申请Method for driving solid-state imaging apparatus and solid-state imaging apparatus 有权用于驱动固态成像装置和固态成像装置的方法公开(公告)号：US20070023785A1
公开(公告)日：2007-02-01
申请号：US11483746
申请日：2006-07-10
IPC分类号： H01L27/148 , H04N5/335
CPC分类号： H04N5/3592
摘要： A driving method is applied to a solid-state imaging apparatus having photoelectric conversion portions, transfer portion for reading out signal charges, and an excess charge draining portion for draining charges exceeding a saturation charge amount that is set by a reference voltage. One of driving modes is selected from a full pixel mode in which accumulated signal charges are detected individually for each pixel and a pixel mixing mode in which signal charges of a predetermined number of pixels are mixed to be detected. In the full pixel mode, the draining portion is supplied with the reference voltage having the same value during a charge accumulation period and a read transfer period for read transferring charges. In the pixel mixing mode, the draining portion is supplied with the reference voltage having a low level during the charge accumulation period and the reference voltage having a high level during the read transfer period. An appropriate driving for the pixel mixing mode can be performed by avoiding a limitation of a substrate voltage, without deteriorating the spectral characteristics, the sensitivity, nor the linearity.
摘要翻译： 将驱动方法应用于具有光电转换部分的固态成像装置，用于读出信号电荷的转印部分和用于排出超过由参考电压设置的饱和电荷量的电荷的过量电荷排出部分。 其中一种驱动模式是从满像素模式中选择的，其中针对每个像素分别检测累积的信号电荷，以及混合预定数量的像素的信号电荷进行检测的像素混合模式。 在全像素模式中，在电荷累积期间和读取传输电荷的读取传送周期中，向排水部分提供具有相同值的参考电压。 在像素混合模式中，在读取传送周期期间，在电荷累积期间内，向排水部分供给具有低电平的参考电压。 可以通过避免衬底电压的限制而不劣化光谱特性，灵敏度和线性度来进行像素混合模式的适当驱动。
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公开(公告)号：US07898589B2
公开(公告)日：2011-03-01
申请号：US10953063
申请日：2004-09-30
申请人： Shinji Yamamoto , Toshiya Fujii , Kazuyuki Inokuma , Tsuyoshi Hasuka , Ryoichi Nagayoshi , Keijirou Itakura , Izumi Shimizu
发明人： Shinji Yamamoto , Toshiya Fujii , Kazuyuki Inokuma , Tsuyoshi Hasuka , Ryoichi Nagayoshi , Keijirou Itakura , Izumi Shimizu
CPC分类号： H04N5/3591 , H04N5/3728
摘要： A drive unit 120 sets a saturation amount in a read period in which charges generated in pixels are read to vertical CCDs to be lower in a combination mode than in an individual mode (see Vsub in count values 22 to 24 in FIG. 6). As a result, excess charges in the pixels are drained to an n-type substrate 11. The drive unit 120 also sets an accumulation period to be shorter in combination mode than in individual mode (see Vsub in each mode in FIG. 6).
摘要翻译： 驱动单元120将组合模式中的像素中产生的电荷读取到垂直CCD的读取周期中的饱和量设置为比单独模式更低（参见图6中的计数值22至24中的Vsub）。 结果，像素中的过量电荷被排出到n型衬底11.驱动单元120还将组合模式中的累积周期设置为比单独模式更短（参见图6中的每个模式中的Vsub）。
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8.发明授权Method for driving solid-state imaging apparatus and solid-state imaging apparatus 有权用于驱动固态成像装置和固态成像装置的方法公开(公告)号：US07884872B2
公开(公告)日：2011-02-08
申请号：US11483746
申请日：2006-07-10
IPC分类号： H04N5/335
CPC分类号： H04N5/3592
摘要： A driving method is applied to a solid-state imaging apparatus having photoelectric conversion portions, transfer portion for reading out signal charges, and an excess charge draining portion for draining charges exceeding a saturation charge amount that is set by a reference voltage. One of driving modes is selected from a full pixel mode in which accumulated signal charges are detected individually for each pixel and a pixel mixing mode in which signal charges of a predetermined number of pixels are mixed to be detected. In the full pixel mode, the draining portion is supplied with the reference voltage having the same value during a charge accumulation period and a read transfer period for read transferring charges. In the pixel mixing mode, the draining portion is supplied with the reference voltage having a low level during the charge accumulation period and the reference voltage having a high level during the read transfer period. An appropriate driving for the pixel mixing mode can be performed by avoiding a limitation of a substrate voltage, without deteriorating the spectral characteristics, the sensitivity, nor the linearity.
摘要翻译： 将驱动方法应用于具有光电转换部分的固态成像装置，用于读出信号电荷的转印部分和用于排出超过由参考电压设置的饱和电荷量的电荷的过量电荷排出部分。 其中一种驱动模式是从满像素模式中选择的，其中针对每个像素分别检测累积的信号电荷，以及混合预定数量的像素的信号电荷进行检测的像素混合模式。 在全像素模式中，在电荷累积期间和读取传输电荷的读取传送周期中，向排水部分提供具有相同值的参考电压。 在像素混合模式中，在读取传送周期期间，在电荷累积期间内，向排水部分供给具有低电平的参考电压。 可以通过避免衬底电压的限制而不劣化光谱特性，灵敏度和线性度来进行像素混合模式的适当驱动。
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9.发明授权Solid-state image sensor, solid-state image sensing apparatus, camera, and method for controlling a solid-state image sensor 有权固态图像传感器，固态图像感测装置，照相机和用于控制固态图像传感器的方法公开(公告)号：US07515184B2
公开(公告)日：2009-04-07
申请号：US10992108
申请日：2004-11-19
CPC分类号： H04N5/347 , H04N5/3722 , H04N9/045
摘要： The present invention provides a solid-state image sensor, a solid-state image sensing apparatus, and a camera realizing a high-speed operation, all operable to output signal charges so as to maintain the light sensitivity and generate high-quality video signals free from moiré and aliased signals even if the number of pixels making up one frame of an image is reduced. The solid-state image sensor comprises a plurality of photoelectric converters, vertical transfer groups, and a horizontal transfer unit disposed at one side of the vertical transfer groups. Each vertical transfer group includes 2n+1 vertical transfer units, where n is an integer of 1 or more. Each vertical transfer unit includes a plurality of transfer electrodes arranged in columns and charge storage units receiving and storing charges from the photoelectric converters. In n out of the 2n+1 vertical transfer units, predetermined transfer electrodes disposed near the horizontal transfer unit are independent transfer electrodes.
摘要翻译： 本发明提供了一种固态图像传感器，固态图像感测装置和实现高速操作的照相机，全部可操作地输出信号电荷，以保持光的灵敏度并产生高质量的视频信号 即使构成图像的一帧的像素数量减少，也可以从波纹和混叠信号中获得。 固态图像传感器包括多个光电转换器，垂直传送组和设置在垂直传送组一侧的水平传送单元。 每个垂直传送组包括2n + 1个垂直传送单元，其中n是1或更大的整数。 每个垂直传送单元包括多个布置成列的传送电极，并且从光电转换器接收和存储电荷的电荷存储单元。 在2n + 1垂直转印单元中的n中，设置在水平转印单元附近的预定转印电极是独立的转印电极。
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公开(公告)号：US20060038903A1
公开(公告)日：2006-02-23
申请号：US11183868
申请日：2005-07-19
申请人： Ryoichi Nagayoshi , Nobuhiko Mutoh
发明人： Ryoichi Nagayoshi , Nobuhiko Mutoh
CPC分类号： H03F3/345 , H03F3/505 , H03F3/72 , H03F2200/111
摘要： The present invention provides a semiconductor device which enables to control increase of current consumption and decrease of gain at the time of broad bandwidth for frequency. The semiconductor device includes a source-follower amplifier and a first control circuit, and the source-follower amplifier includes plurality of driver transistors D2a and D2b using sources as output, the sources being connected to each other therein, a load transistor L2 connected to plurality of the drive transistors D2a and D2b. The first control circuit (switching transistors S and T) makes plurality of the driver transistors operate selectively depending on frequency bandwidth of a input signal to the source-follower amplifier.
摘要翻译： 本发明提供了一种半导体器件，其能够控制频率的宽带宽时的电流消耗的增加和增益的降低。 该半导体器件包括源极跟随放大器和第一控制电路，源极跟随放大器包括使用源作为输出的多个驱动晶体管D 2 a和D 2 b，源极彼此连接，负载晶体管 L 2连接到多个驱动晶体管D 2 a和D 2 b。 第一控制电路（开关晶体管S和T）使得多个驱动器晶体管根据对源极跟随放大器的输入信号的频率带宽选择性地工作。
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