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1.发明授权Solid-state image sensor, solid-state image sensing apparatus, camera, and method for controlling a solid-state image sensor 有权固态图像传感器，固态图像感测装置，照相机和用于控制固态图像传感器的方法公开(公告)号：US07515184B2
公开(公告)日：2009-04-07
申请号：US10992108
申请日：2004-11-19
CPC分类号： H04N5/347 , H04N5/3722 , H04N9/045
摘要： The present invention provides a solid-state image sensor, a solid-state image sensing apparatus, and a camera realizing a high-speed operation, all operable to output signal charges so as to maintain the light sensitivity and generate high-quality video signals free from moiré and aliased signals even if the number of pixels making up one frame of an image is reduced. The solid-state image sensor comprises a plurality of photoelectric converters, vertical transfer groups, and a horizontal transfer unit disposed at one side of the vertical transfer groups. Each vertical transfer group includes 2n+1 vertical transfer units, where n is an integer of 1 or more. Each vertical transfer unit includes a plurality of transfer electrodes arranged in columns and charge storage units receiving and storing charges from the photoelectric converters. In n out of the 2n+1 vertical transfer units, predetermined transfer electrodes disposed near the horizontal transfer unit are independent transfer electrodes.
摘要翻译： 本发明提供了一种固态图像传感器，固态图像感测装置和实现高速操作的照相机，全部可操作地输出信号电荷，以保持光的灵敏度并产生高质量的视频信号 即使构成图像的一帧的像素数量减少，也可以从波纹和混叠信号中获得。 固态图像传感器包括多个光电转换器，垂直传送组和设置在垂直传送组一侧的水平传送单元。 每个垂直传送组包括2n + 1个垂直传送单元，其中n是1或更大的整数。 每个垂直传送单元包括多个布置成列的传送电极，并且从光电转换器接收和存储电荷的电荷存储单元。 在2n + 1垂直转印单元中的n中，设置在水平转印单元附近的预定转印电极是独立的转印电极。
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公开(公告)号：US07564492B2
公开(公告)日：2009-07-21
申请号：US10712770
申请日：2003-11-12
申请人： Ryoichi Nagayoshi , Toshiya Fujii , Tsuyoshi Hasuka , Akiyoshi Kohno , Shinichi Tashiro , Keijiro Itakura
发明人： Ryoichi Nagayoshi , Toshiya Fujii , Tsuyoshi Hasuka , Akiyoshi Kohno , Shinichi Tashiro , Keijiro Itakura
CPC分类号： H04N5/3725 , H04N5/347 , H04N5/37213 , H04N9/045
摘要： The present invention provides a solid-state image sensing device that can reduce at least the number of pixels arranged in the horizontal direction and can output high quality picture signals at high speed without generating moire or alias. The solid-state image sensing device includes vertical transfer parts 3 in which signal charges read out from photoelectric conversion parts 2 arranged bidimensionally are transferred in the vertical direction stage by stage, a horizontal transfer part 4 in which signal charges received from the vertical transfer parts 3 are transferred in the horizontal direction, and a control unit that controls transfer operations of the vertical transfer parts 3 and horizontal transfer part 4, wherein vertical last stages of the vertical transfer parts 3 have transfer electrodes formed to have identical configurations repeated every 2n+1 (n denotes an integer of 1 or higher) columns, and vertical last stages of columns other than one column among the 2n+1 columns or all vertical stages are provided with transfer electrodes that are independent of those of the other vertical last stages.
摘要翻译： 本发明提供一种固态图像感测装置，其能够至少减少在水平方向上布置的像素的数量，并且可以高速输出高质量的图像信号，而不产生莫尔条纹或别名。 固体摄像装置包括垂直传送部件3，其中从垂直方向逐级传送从光电转换部件2读出的信号电荷逐级传送;水平传送部件4，其中从垂直传送部件接收信号电荷 3在水平方向上传送，以及控制单元，其控制垂直传送部件3和水平传送部件4的传送操作，其中垂直传送部件3的垂直最后级具有形成为具有相同配置的传输电极，每2n + 1（n表示1以上的整数）列，并且在2n + 1列或全部垂直级中除了一列之外的列的垂直最后级设置有与其他垂直最后级独立的传输电极。
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3.发明申请Solid-state image sensor, solid-state image sensing apparatus, camera, and method 有权固态图像传感器，固态摄像装置，照相机和方法公开(公告)号：US20050117043A1
公开(公告)日：2005-06-02
申请号：US10992108
申请日：2004-11-19
IPC分类号： H01L27/148 , H04N5/21 , H04N5/225 , H04N5/335 , H04N5/347 , H04N5/357 , H04N5/372 , H04N5/3728 , H04N9/04
CPC分类号： H04N5/347 , H04N5/3722 , H04N9/045
摘要： The present invention provides a solid-state image sensor, a solid-state image sensing apparatus, and a camera realizing a high-speed operation, all operable to output signal charges so as to maintain the light sensitivity and generate high-quality video signals free from moiréand aliased signals even if the number of pixels making up one frame of an image is reduced. The solid-state image sensor comprises a plurality of photoelectric converters, vertical transfer groups, and a horizontal transfer unit disposed at one side of the vertical transfer groups. Each vertical transfer group includes 2n+1 vertical transfer units, where n is an integer of 1 or more. Each vertical transfer unit includes a plurality of transfer electrodes arranged in columns and charge storage units receiving and storing charges from the photoelectric converters. In n out of the 2n+1 vertical transfer units, predetermined transfer electrodes disposed near the horizontal transfer unit are independent transfer electrodes.
摘要翻译： 本发明提供了一种固态图像传感器，固态图像感测装置和实现高速操作的照相机，全部可操作地输出信号电荷，以保持光灵敏度并产生高质量的视频信号 即使构成图像的一帧的像素的数量减少，也可以从莫尔混叠信号中获得。 固态图像传感器包括多个光电转换器，垂直传送组和设置在垂直传送组一侧的水平传送单元。 每个垂直传送组包括2n + 1个垂直传送单元，其中n是1或更大的整数。 每个垂直传送单元包括多个布置成列的传送电极，并且从光电转换器接收和存储电荷的电荷存储单元。 在2n + 1垂直转印单元中的n中，设置在水平转印单元附近的预定转印电极是独立的转印电极。
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公开(公告)号：US20050068435A1
公开(公告)日：2005-03-31
申请号：US10953509
申请日：2004-09-30
IPC分类号： H04N5/232 , H04N5/225 , H04N5/235 , H04N5/243 , H04N5/30 , H04N5/335 , H04N5/351 , H04N5/369 , H04N5/376 , H04N9/04
CPC分类号： H04N9/045 , H04N5/2351 , H04N5/243
摘要： A solid-state image sensor includes photoelectric converters positioned either in a complementary color filter array or in the Bayer color filter array. The solid-state image sensor either adds together electric charges obtained by 9 photoelectric converters that relate to one color in each portion of six rows and six columns of the photoelectric converters so as to output a resulting electric charge as one pixel, or outputs the electric charges obtained by 9 photoelectric converters that relate to one color as 9 pixels without added together. By adding together the electric charges, the resolution of an image becomes one ninth of the case where the electric charges are not added together, and the sensitivity becomes 9 times higher than the same. The control unit not shown in the drawing determines a time length for photoelectric conversion assuming that the electric charges are not added together. If the determined time length is longer than a predetermined threshold, the actual time length for photoelectric conversion is reduced to {fraction (1/9)} of the determined time length, and an image is generated based on the resulting electric charges that are outputted after the electric charges stored in the photoelectric converters are added together.
摘要翻译： 固态图像传感器包括位于补色滤光片阵列或拜耳滤色器阵列中的光电转换器。 固态图像传感器将由光电转换器的六行六列的每一部分中的一种颜色相关的9个光电转换器获得的电荷相加，从而将所得电荷输出为一个像素，或者输出电 由9个光电转换器获得的与一个颜色相关的9个像素而不添加在一起的电荷。 通过将电荷加在一起，图像的分辨率成为电荷不相加的情况的九分之一，并且灵敏度比其高9倍。 图中未示出的控制单元确定假设电荷不相加在一起的光电转换的时间长度。 如果确定的时间长度大于预定阈值，则光电转换的实际时间长度减小到{分数（所确定的时间长度的1/9），并且基于所产生的电荷之后输出的图像 存储在光电转换器中的电荷被加在一起。
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公开(公告)号：US20050062857A1
公开(公告)日：2005-03-24
申请号：US10953063
申请日：2004-09-30
申请人： Shinji Yamamoto , Toshiya Fujii , Kazuyuki Inokuma , Tsuyoshi Hasuka , Ryoichi Nagayoshi , Keijirou Itakura , Izumi Shimizu
发明人： Shinji Yamamoto , Toshiya Fujii , Kazuyuki Inokuma , Tsuyoshi Hasuka , Ryoichi Nagayoshi , Keijirou Itakura , Izumi Shimizu
IPC分类号： H01L27/148 , H04N5/225 , H04N5/232 , H04N5/235 , H04N5/335 , H04N5/347 , H04N5/353 , H04N5/359 , H04N5/369 , H04N5/372 , H04N9/07 , H04N101/00
CPC分类号： H04N5/3591 , H04N5/3728
摘要： A drive unit 120 sets a saturation amount in a read period in which charges generated in pixels are read to vertical CCDs to be lower in a combination mode than in an individual mode (see Vsub in count values 22 to 24 in FIG. 6). As a result, excess charges in the pixels are drained to an n-type substrate 11. The drive unit 120 also sets al accumulation period to be shorter in combination mode than in individual mode (see Vsub in each mode in FIG. 6).
摘要翻译： 驱动单元120将组合模式中的像素中产生的电荷读取到垂直CCD的读取周期中的饱和量设置为比单独模式更低（参见图6中的计数值22至24中的Vsub）。 结果，像素中的过量电荷被排出到n型衬底11.驱动单元120还将组合模式中的累积周期设置为比单独模式更短（参见图6中的每个模式中的Vsub）。
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公开(公告)号：US07898589B2
公开(公告)日：2011-03-01
申请号：US10953063
申请日：2004-09-30
申请人： Shinji Yamamoto , Toshiya Fujii , Kazuyuki Inokuma , Tsuyoshi Hasuka , Ryoichi Nagayoshi , Keijirou Itakura , Izumi Shimizu
发明人： Shinji Yamamoto , Toshiya Fujii , Kazuyuki Inokuma , Tsuyoshi Hasuka , Ryoichi Nagayoshi , Keijirou Itakura , Izumi Shimizu
CPC分类号： H04N5/3591 , H04N5/3728
摘要： A drive unit 120 sets a saturation amount in a read period in which charges generated in pixels are read to vertical CCDs to be lower in a combination mode than in an individual mode (see Vsub in count values 22 to 24 in FIG. 6). As a result, excess charges in the pixels are drained to an n-type substrate 11. The drive unit 120 also sets an accumulation period to be shorter in combination mode than in individual mode (see Vsub in each mode in FIG. 6).
摘要翻译： 驱动单元120将组合模式中的像素中产生的电荷读取到垂直CCD的读取周期中的饱和量设置为比单独模式更低（参见图6中的计数值22至24中的Vsub）。 结果，像素中的过量电荷被排出到n型衬底11.驱动单元120还将组合模式中的累积周期设置为比单独模式更短（参见图6中的每个模式中的Vsub）。
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公开(公告)号：US07274224B2
公开(公告)日：2007-09-25
申请号：US11183808
申请日：2005-07-19
申请人： Ryoichi Nagayoshi
发明人： Ryoichi Nagayoshi
IPC分类号： H03K3/00
摘要： The present invention provides a semiconductor device that can adjust signal frequency bandwidths and consumption currents to be appropriately increased or reduced in source-follower amplifiers in all stages. The semiconductor device is comprised of a source-follower amplifier including a driver transistor D1, and a load transistor L1 that is connected to the driver transistor D1 and driven variably depending on a signal inputted to the driver transistor, wherein a gate of the load transistor L1 is applied with a variable bias voltage. The semiconductor device 1 is further comprised of a source-follower amplifier including a driver transistor D2, and a load circuit (load transistor L2) that is connected to said second driver transistor and driven variably depending on a signal outputted from the second driver transistor D2, wherein a gate of the load transistor L2 is applied with a variable bias voltage to vary a resistance value of the load transistor L2.
摘要翻译： 本发明提供一种半导体器件，其可以在所有阶段中调整信号频率带宽和消耗电流以适当地增加或减少源跟随放大器。 半导体器件由包括驱动晶体管D1的源极跟随放大器和连接到驱动晶体管D1的负载晶体管L 1组成，并且根据输入到驱动晶体管的信号可变地驱动，其中栅极 负载晶体管L 1被施加可变偏置电压。 半导体器件1还包括源极跟随器放大器，其包括驱动晶体管D 2和负载电路（负载晶体管L 2），负载电路（负载晶体管L 2）连接到所述第二驱动晶体管，并根据从第二驱动器输出的信号 晶体管D 2，其中负载晶体管L 2的栅极被施加可变偏置电压以改变负载晶体管L 2的电阻值。
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公开(公告)号：US20060022708A1
公开(公告)日：2006-02-02
申请号：US11183808
申请日：2005-07-19
申请人： Ryoichi Nagayoshi
发明人： Ryoichi Nagayoshi
IPC分类号： H03K19/094
摘要： The present invention provides a semiconductor device that can adjust signal frequency bandwidths and consumption currents to be appropriately increased or reduced in source-follower amplifiers in all stages. The semiconductor device is comprised of a source-follower amplifier including a driver transistor D1, and a load transistor L1 that is connected to the driver transistor D1 and driven variably depending on a signal inputted to the driver transistor, wherein a gate of the load transistor L1 is applied with a variable bias voltage. The semiconductor device 1 is further comprised of a source-follower amplifier including a driver transistor D2, and a load circuit (load transistor L2) that is connected to said second driver transistor and driven variably depending on a signal outputted from the second driver transistor D2, wherein a gate of the load transistor L2 is applied with a variable bias voltage to vary a resistance value of the load transistor L2.
摘要翻译： 本发明提供一种半导体器件，其可以在所有阶段中调整信号频率带宽和消耗电流以适当地增加或减少源跟随放大器。 半导体器件由包括驱动晶体管D1的源极跟随放大器和连接到驱动晶体管D1的负载晶体管L 1组成，并且根据输入到驱动晶体管的信号可变地驱动，其中栅极 负载晶体管L 1被施加可变偏置电压。 半导体器件1还包括源极跟随器放大器，其包括驱动晶体管D 2和负载电路（负载晶体管L 2），负载电路（负载晶体管L 2）连接到所述第二驱动晶体管，并根据从第二驱动器输出的信号 晶体管D 2，其中负载晶体管L 2的栅极被施加可变偏置电压以改变负载晶体管L 2的电阻值。
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公开(公告)号：US07078258B2
公开(公告)日：2006-07-18
申请号：US10847443
申请日：2004-05-18
IPC分类号： H01L21/00
CPC分类号： H01L27/14603 , H01L27/1462 , H01L27/14627 , H01L31/02164
摘要： In a manufacturing method of an image sensor, a lightproof film (an antireflective film for avoiding flares) is formed over a wiring area; a transparent film is formed over an imaging area using a material capable of patterning; a transparent film, for forming micro lense on top, is formed on the transparent film, wherein a height of the top surfaces of the transparent film and the lightproof film are evenly formed.
摘要翻译： 在图像传感器的制造方法中，在配线区域上形成有防光膜（用于避免耀斑的防反射膜） 使用能够图案化的材料在成像区域上形成透明膜; 在透明膜上形成用于在顶部形成微透镜的透明膜，其中透明膜和防光膜的顶表面的高度均匀地形成。
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公开(公告)号：US07466001B2
公开(公告)日：2008-12-16
申请号：US11394117
申请日：2006-03-31
IPC分类号： H01L27/14 , H01L31/00 , H01L31/0232 , H01L31/0203
CPC分类号： H01L27/14603 , H01L27/1462 , H01L27/14627 , H01L31/02164
摘要： In a manufacturing method of an image sensor, a lightproof film (an antireflective film for avoiding flares) is formed over a wiring area; a transparent film is formed over an imaging area using a material capable of patterning; a transparent film, for forming micro lenses on top, is formed on the transparent film, wherein a height of the top surfaces of the transparent film and the lightproof film are evenly formed.
摘要翻译： 在图像传感器的制造方法中，在配线区域上形成有防光膜（用于避免耀斑的防反射膜） 使用能够图案化的材料在成像区域上形成透明膜; 在透明膜上形成用于在顶部形成微透镜的透明膜，其中透明膜和防光膜的上表面的高度均匀地形成。
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