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公开(公告)号：US20120193749A1
公开(公告)日：2012-08-02
申请号：US13447566
申请日：2012-04-16
IPC分类号： H01L29/06
CPC分类号： H01L29/8611 , H01L29/0619 , H01L29/0692 , H01L29/404 , H01L2924/0002 , H01L2924/00
摘要： In a semiconductor device having a pn-junction diode structure that includes anode diffusion region including edge area, anode electrode on anode diffusion region, and insulator film on edge area of anode diffusion region, the area of anode electrode above anode diffusion region with insulator film interposed between anode electrode and anode diffusion region is narrower than the area of insulator film on edge area of anode diffusion region.
摘要翻译： 在具有pn结二极管结构的半导体器件中，包括阳极扩散区域包括边缘区域，阳极扩散区域上的阳极电极和阳极扩散区域的边缘区域上的绝缘膜，阳极扩散区域上方的绝缘膜的阳极电极面积 介于阳极电极和阳极扩散区之间的绝缘膜的面积比阳极扩散区边缘区域的面积窄。
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公开(公告)号：US20100019342A1
公开(公告)日：2010-01-28
申请号：US12507735
申请日：2009-07-22
IPC分类号： H01L29/861
CPC分类号： H01L29/8611 , H01L29/0619 , H01L29/0692 , H01L29/404 , H01L2924/0002 , H01L2924/00
摘要： In a semiconductor device having a pn-junction diode structure that includes anode diffusion region including edge area, anode electrode on anode diffusion region, and insulator film on edge area of anode diffusion region, the area of anode electrode above anode diffusion region with insulator film interposed between anode electrode and anode diffusion region is narrower than the area of insulator film on edge area of anode diffusion region.
摘要翻译： 在具有pn结二极管结构的半导体器件中，包括阳极扩散区域包括边缘区域，阳极扩散区域上的阳极电极和阳极扩散区域的边缘区域上的绝缘膜，阳极扩散区域上方的绝缘膜的阳极电极面积 介于阳极电极和阳极扩散区之间的绝缘膜的面积比阳极扩散区边缘区域的面积窄。
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