公开(公告)号：US08006553B2

公开(公告)日：2011-08-30

申请号：US12458272

申请日：2009-07-07

申请人： Ryuichirou Abe ,  Tsuyoshi Fukada ,  Keisuke Suzui

发明人： Ryuichirou Abe ,  Tsuyoshi Fukada ,  Keisuke Suzui

IPC分类号： G01F1/68

CPC分类号： B81B7/0012 ,  B81B2201/0214 ,  G01F1/6845 ,  G01F1/692

摘要： A sensor includes: a silicon substrate having a hollow portion, which is arranged on a backside of the substrate; an insulation film disposed on a front side of the substrate and covering the hollow portion; a heater disposed on the insulation film, made of a semiconductor layer, and configured to generate heat; and an anti-stripping film for protecting the insulation film from being removed from the silicon substrate. The silicon substrate, the insulation film and the semiconductor layer provide a SOI substrate. The hollow portion has a sidewall and a bottom. The anti-stripping film covers at least a boundary between the sidewall and the bottom of the hollow portion.

摘要翻译： 传感器包括：具有中空部分的硅衬底，其设置在衬底的背面; 绝缘膜，设置在所述基板的前侧并覆盖所述中空部; 设置在绝缘膜上的加热器，由半导体层制成，并且被配置为产生热量; 以及用于保护绝缘膜不被从硅衬底移除的防剥离膜。 硅衬底，绝缘膜和半导体层提供SOI衬底。 中空部分具有侧壁和底部。 防剥离膜至少覆盖中空部分的侧壁和底部之间的边界。

公开(公告)号：US20100005877A1

公开(公告)日：2010-01-14

申请号：US12458272

申请日：2009-07-07

申请人： Ryuichirou Abe ,  Tsuyoshi Fukada ,  Keisuke Suzui

发明人： Ryuichirou Abe ,  Tsuyoshi Fukada ,  Keisuke Suzui

IPC分类号： G01F1/68 ,  H01L21/30

CPC分类号： B81B7/0012 ,  B81B2201/0214 ,  G01F1/6845 ,  G01F1/692

摘要： A sensor includes: a silicon substrate having a hollow portion, which is arranged on a backside of the substrate; an insulation film disposed on a front side of the substrate and covering the hollow portion; a heater disposed on the insulation film, made of a semiconductor layer, and configured to generate heat; and an anti-stripping film for protecting the insulation film from being removed from the silicon substrate. The silicon substrate, the insulation film and the. semiconductor layer provide a SOI substrate. The hollow portion has a sidewall and a bottom. The anti-stripping film covers at least a boundary between the sidewall and the bottom of the hollow portion.

摘要翻译： 传感器包括：具有中空部分的硅衬底，其设置在衬底的背面; 绝缘膜，设置在所述基板的前侧并覆盖所述中空部; 设置在绝缘膜上的加热器，由半导体层制成，并且被配置为产生热量; 以及用于保护绝缘膜不被从硅衬底移除的防剥离膜。 硅衬底，绝缘膜和。 半导体层提供SOI衬底。 中空部分具有侧壁和底部。 防剥离膜至少覆盖中空部分的侧壁和底部之间的边界。

公开(公告)号：US5812022A

公开(公告)日：1998-09-22

申请号：US715610

申请日：1996-09-18

申请人： Tetsuo Hirano ,  Ryuichirou Abe ,  Hiroaki Tanaka

发明人： Tetsuo Hirano ,  Ryuichirou Abe ,  Hiroaki Tanaka

IPC分类号： H03F1/26 ,  H03F3/45

CPC分类号： H03F3/45076

摘要： A differential amplifier circuit whose noise is reduced when used in a CMOS operational amplifier without increasing its cost includes a differential input stage circuit in which gate lengths of load transistors and gate lengths of differential input transistors are set to an optimal ratio to minimize internal transistor noise components.

摘要翻译： 在不增加成本的情况下，在CMOS运算放大器中使用噪声降低的差分放大器电路包括差分输入级电路，其中负载晶体管的栅极长度和差分输入晶体管的栅极长度被设置为使最小化内部晶体管噪声的最佳比率 组件。

公开(公告)号：US6150697A

公开(公告)日：2000-11-21

申请号：US301562

申请日：1999-04-29

申请人： Akihiko Teshigahara ,  Akiyoshi Asai ,  Kunihiro Onoda ,  Hiroyasu Itou ,  Ryuichirou Abe ,  Toshio Sakakibara

发明人： Akihiko Teshigahara ,  Akiyoshi Asai ,  Kunihiro Onoda ,  Hiroyasu Itou ,  Ryuichirou Abe ,  Toshio Sakakibara

IPC分类号： H01L21/336 ,  H01L21/762 ,  H01L21/84 ,  H01L27/12 ,  H01L29/06 ,  H01L29/78 ,  H01L27/01

CPC分类号： H01L29/66681 ,  H01L21/76264 ,  H01L21/84 ,  H01L27/1203 ,  H01L29/0696 ,  H01L29/66674 ,  H01L29/7824 ,  H01L21/76275 ,  H01L21/76281 ,  H01L21/76286 ,  H01L29/402

摘要： An island region surrounded by a trench is provided in an SOI substrate. The island region is further surrounded by a buffer region with a buffer region contact layer. In the island region, a source region is annularly provided around a drain region, and source and drain electrodes are respectively provided on the source and the drain regions. An annular auxiliary electrode is formed with the source electrode to extend over the trench. Accordingly, a voltage applied to the source electrode can be applied to the auxiliary electrode, so that electric field concentration between the buffer region and the source electrode is relaxed.

摘要翻译： 在SOI衬底中设置由沟槽包围的岛状区域。 岛区还被具有缓冲区接触层的缓冲区包围。 在岛状区域，源极区域围绕漏极区域环状设置，源极和漏极电极分别设置在源极和漏极区域上。 形成环形辅助电极，源电极在沟槽上延伸。 因此，施加到源电极的电压可以施加到辅助电极，使得缓冲区域和源电极之间的电场浓度被放宽。