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    BLANKMASK WITH BACKSIDE CONDUCTIVE LAYER, AND PHOTOMASK MANUFACTURED WITH THE SAME
    2.
    发明申请
    BLANKMASK WITH BACKSIDE CONDUCTIVE LAYER, AND PHOTOMASK MANUFACTURED WITH THE SAME 有权

    公开(公告)号：US20220066310A1

    公开(公告)日：2022-03-03

    申请号：US16951169

    申请日：2020-11-18

    申请人： S&S TECH Co., Ltd.

    发明人： Gyeong-Won SEO ,  Gil-Woo KONG ,  Chul-Kyu YANG

    IPC分类号： G03F1/24 ,  H01L21/033

    摘要： A blankmask includes a conductive layer attached to a backside of a substrate, and the conductive layer includes a first layer, a second layer, and a third layer that are sequentially stacked on the backside of the substrate. The first layer and the third layer are made of a material that contains chromium (Cr) and oxygen (O), and the second layer is made of a material that does not contain the oxygen (O) but contains the chromium (Cr). There is provided the blankmask with the conductive layer having characteristics of low sheet resistance, high adhesion to the substrate, and low stress applied to the substrate.

    BLANKMASK AND PHOTOMASK
    4.
    发明申请
    BLANKMASK AND PHOTOMASK 审中-公开

    公开(公告)号：US20200379337A1

    公开(公告)日：2020-12-03

    申请号：US15931380

    申请日：2020-05-13

    申请人： S&S TECH Co., Ltd.

    发明人： Cheol SHIN ,  Jong-Hwa LEE ,  Chul-Kyu YANG ,  Min-Ki CHOI ,  Seung-Hyup SHIN

    IPC分类号： G03F1/26 ,  G03F1/48 ,  G03F1/60 ,  G03F1/80 ,  H01L21/033

    摘要： A blankmask includes a transparent substrate, a phase-shift film, and a light-shielding film. The phase-shift film for example has a transmissivity of 30˜100%, and in this case the light-shielding film has a thickness of 40˜70 nm and a composition ratio of 30˜80 at % chromium, 10˜50 at % nitrogen, 0˜35% oxygen, and 0˜25% carbon. A structure where the light-shielding film and the phase-shift film are stacked has an optical density of 2.5˜3.5. Thus, CD deviation is minimized when the light-shielding film is etched in a manufacturing process for a photomask.

    PHASE-SHIFT BLANKMASK AND PHOTOMASK
    5.
    发明申请
    PHASE-SHIFT BLANKMASK AND PHOTOMASK 有权
    PHASE-SHIFT BLANKMASK和PHOTOMASK

    公开(公告)号：US20160054650A1

    公开(公告)日：2016-02-25

    申请号：US14804568

    申请日：2015-07-21

    申请人： S&S TECH Co., Ltd.

    发明人： Kee-Soo NAM ,  Cheol SHIN ,  Chul-Kyu YANG ,  Jong-Hwa LEE ,  Min-Ki CHOI ,  Chang-Jun KIM ,  Kyu-Jin JANG

    IPC分类号： G03F1/26

    CPC分类号： G03F1/26

    摘要： Disclosed is a phase-shift blankmask, in which a light-shielding film includes a metal compound and having a structure of a multi-layer film or a continuous film, which includes a first light-shielding layer and a second light-shielding layer. The second light-shielding layer has higher optical density at an exposure wavelength per unit thickness (Å) than the first light-shielding layer. The first light-shielding layer occupies 70% to 90% of the whole thickness of the light-shielding film. With this, the blankmask secures a light-shielding effect, has an improved etching speed, and makes a resist film thinner, thereby achieving a fine pattern.

    摘要翻译： 公开了一种相移掩模，其中遮光膜包括具有多层膜或连续膜的结构的金属化合物，其包括第一遮光层和第二遮光层。 第二遮光层在比第一遮光层的单位厚度（A）的曝光波长下具有更高的光密度。 第一遮光层占遮光膜整体厚度的70％〜90％。 由此，掩模保护遮光效果，蚀刻速度提高，抗蚀剂膜变薄，从而形成精细图案。

    BLANKMASK AND PHOTOMASK
    7.
    发明申请
    BLANKMASK AND PHOTOMASK 有权

    公开(公告)号：US20220075258A1

    公开(公告)日：2022-03-10

    申请号：US17418467

    申请日：2019-12-20

    申请人： S&S TECH Co., Ltd.

    发明人： Cheol SHIN ,  Jong-Hwa LEE ,  Chul-Kyu YANG ,  Min-Ki CHOI ,  Seung-Hyup SHIN ,  Gil-Woo KONG

    IPC分类号： G03F1/48 ,  G03F1/32

    摘要： A blankmask includes a hard film and a light-shielding film formed on a transparent substrate. The hard film is made of a silicon compound that contains at least one of oxygen, nitrogen and carbon in addition to silicon. There are provided a blankmask and a photomask improved in resolution, desired critical dimension (CD), and process window margin. Thus, it is possible to manufacture a blankmask and a photomask of good quality when a pattern of 32 nm or below, in particular, 14 nm or below is formed.

    REFLECTIVE TYPE BLANKMASK AND PHOTOMASK FOR EUV
    8.
    发明申请
    REFLECTIVE TYPE BLANKMASK AND PHOTOMASK FOR EUV 有权

    公开(公告)号：US20210208495A1

    公开(公告)日：2021-07-08

    申请号：US17144416

    申请日：2021-01-08

    申请人： S&S TECH Co., Ltd.

    发明人： Cheol SHIN ,  Jong-Hwa LEE ,  Chul-Kyu YANG ,  Gil-Woo KONG

    IPC分类号： G03F1/24 ,  G03F1/58 ,  H01L21/033

    摘要： Disclosed is a blankmask for EUV includes a substrate, a reflection film that is stacked on the substrate; and an absorbing film that is stacked on the reflection film. The absorbing film is constituted by an uppermost layer and a plurality of layers under the uppermost layer. The uppermost layer contains Ta and O. The plurality of layers contain Ta and are configured so that a content of N increases upward. As a result, a CD deviation of a pattern of the absorbing film is minimized.

    PHASE SHIFT BLANKMASK AND PHOTOMASK
    9.
    发明申请
    PHASE SHIFT BLANKMASK AND PHOTOMASK 有权
    PHASE SHIFT BLANKMASK和PHOTOMASK

    公开(公告)号：US20160291451A1

    公开(公告)日：2016-10-06

    申请号：US14945686

    申请日：2015-11-19

    申请人： S&S TECH Co., Ltd.

    发明人： Kee-Soo NAM ,  Cheol SHIN ,  Jong-Hwa LEE ,  Chul-Kyu YANG ,  Min-Ki CHOI ,  Chang-Jun KIM ,  Kyu-Jin JANG

    IPC分类号： G03F1/26

    CPC分类号： G03F1/26 ,  G03F1/58

    摘要： Disclosed is a phase-shift blankmask for manufacturing a photomask, which can achieve a fine pattern of not greater than 32 nm, preferably not greater than 14 nm, and more preferably not greater than 10 nm.To this end, a phase-shift film, a light-shielding film, an etch-stopping film and a hard film are provided on a transparent substrate, in which the light-shielding film has a multi-layered structure of two or more layers different in composition, one of which essentially contains oxygen (O), a light-shielding layer essentially having oxygen (O) occupies 50%˜100% of the whole thickness of the light-shielding film, and the phase-shift film has a transmissivity of 10%˜50%.

    摘要翻译： 为此，在透明基板上设置相移膜，遮光膜，蚀刻停止膜和硬膜，其中遮光膜具有两层或多层的多层结构 其中一个基本上含有氧（O），基本上具有氧（O）的遮光层占据整个屏蔽膜的50％〜100％，相移膜具有 透光率为10％〜50％。

    BLANKMASK AND METHOD FOR FABRICATING PHOTOMASK USING THE SAME
    10.
    发明申请
    BLANKMASK AND METHOD FOR FABRICATING PHOTOMASK USING THE SAME 有权
    使用相同方法制作光电子的空白和方法

    公开(公告)号：US20140004449A1

    公开(公告)日：2014-01-02

    申请号：US13928618

    申请日：2013-06-27

    申请人： S&S TECH Co.,Ltd.

    发明人： Kee-Soo NAM ,  Geung-Won KANG ,  Chul-Kyu YANG ,  Jong-Hwa LEE ,  Kyu-Jin JANG

    IPC分类号： G03F1/50

    CPC分类号： G03F1/50 ,  G03F1/24

    摘要： Provided is a blankmask with a light-shielding layer including a light block layer and an anti-reflective layer, and a hard mask film. The light block layer and the anti-reflective layer are formed by combining a layer formed of a MoSi compound and a layer formed of a MoTaSi compound. Thus, the blankmask enables formation of a pattern of 32 nm or less, since the light-shielding layer can be thinly formed to a thickness of 200 to 700 and a photomask having pattern fidelity corresponding to the resolution of the pattern can be formed. The light-shielding layer has an optical density of 2.0 to 4.0 at an exposure wavelength of 193 nm, chemical resistance, and a sufficient process margin for defect repair. Further, the hard mask film is formed to a thickness of 20 to 50 using a compound including tin (Sn) and chromium (Cr), thereby decreasing an etch rate of the hard mask film. Accordingly, a resist film can be formed as a thin film, thereby manufacturing a high-resolution blankmask.

    摘要翻译： 提供一种具有遮光层的坯掩模，该掩模层包括光阻挡层和抗反射层，以及硬掩模膜。 光阻挡层和抗反射层通过组合由MoSi化合物形成的层和由MoTaSi化合物形成的层而形成。 因此，由于可以将遮光层薄薄地形成为200〜700的厚度，所以可以形成32nm以下的图案，并且可以形成具有与图案的分辨率对应的图案保真度的光掩模。 遮光层在193nm的曝光波长下的光密度为2.0〜4.0，耐化学性和缺陷修复的充分的工艺余量。 此外，使用包含锡（Sn）和铬（Cr）的化合物将硬掩模膜形成为20至50的厚度，从而降低硬掩模膜的蚀刻速率。 因此，可以将抗蚀剂膜形成为薄膜，从而制造高分辨率的掩模。