Device for Loading Porous Substrates of Three-Dimensional Shape in Order to be Densified by Directed Flow Chemical Vapor Infiltration
    1.
    发明申请
    Device for Loading Porous Substrates of Three-Dimensional Shape in Order to be Densified by Directed Flow Chemical Vapor Infiltration 审中-公开
    用于加载三维形状多孔基材的装置,以通过定向流化学气相渗透

    公开(公告)号:US20150075428A1

    公开(公告)日:2015-03-19

    申请号:US14348412

    申请日:2012-09-14

    CPC classification number: C23C16/045 C23C16/455 C23C16/458

    Abstract: A loader device for loading porous substrates of three-dimensional shapes extending mainly in a longitudinal direction into a reaction chamber of an infiltration oven for densification of the preforms by directed flow chemical vapor infiltration. The device comprising at least one annular loader stage formed by first and second annular vertical walls arranged coaxially relative to each other and defining between them an annular loader space for the porous substrates to be densified. First and second plates respectively cover the bottom portion and the top portion of the annular loader space. The first and second annular vertical walls include support elements arranged in the annular loader space so as to define between them unit loader cells, each for receiving a respective substrate to be densified. The device also comprises gas feed orifices and gas exhaust orifices in the vicinity of each unit loader cell.

    Abstract translation: 一种装载装置,用于将主要沿纵向延伸的三维形状的多孔基材装入浸入炉的反应室,用于通过定向流化学气相渗透致密化预制件。 该装置包括至少一个由第一和第二环形垂直壁形成的环形装载台,该第一和第二环形垂直壁相对于彼此同轴布置并且在它们之间限定用于使多孔基底致密的环形装载空间。 第一和第二板分别覆盖环形装载机空间的底部和顶部。 第一和第二环形垂直壁包括布置在环形加载器空间中的支撑元件,以便在它们之间限定单元装载单元,每个单元用于接收要被致密化的相应基板。 该装置还包括在每个装载单元附近的气体进料孔和排气孔。

    Method For the Densification of Thin Porous Substrates By Means of Vapour Phase Chemical Infiltration and Device For Loading Such Substrates
    2.
    发明申请
    Method For the Densification of Thin Porous Substrates By Means of Vapour Phase Chemical Infiltration and Device For Loading Such Substrates 有权
    通过气相化学渗透薄化多孔基板的致密化方法和装载这种基板的装置

    公开(公告)号:US20080152803A1

    公开(公告)日:2008-06-26

    申请号:US11884597

    申请日:2006-02-16

    CPC classification number: C23C16/045 C23C16/45578 C23C16/4587

    Abstract: To densify thin porous substrates (1) by chemical vapor infiltration, the invention proposes using loading tooling (10) comprising a tubular duct (10) disposed between first and second plates (12, 13) and around which the thin substrates for densification are disposed radially. The tooling as loaded in this way is then placed inside a reaction chamber (20) in an infiltration oven having a reactive gas admission inlet (21) connected to the tubular duct (11) to enable a reactive gas to be admitted into the duct which distributes the gas along the main faces on the substrates (1) in a flow direction that is essentially radial. The reactive gas can also flow in the opposite direction, i.e. it can be admitted into the tooling (10) from its outer envelope (16) and can be removed via the duct (11).

    Abstract translation: 为了通过化学气相渗透致密化多孔基底(1),本发明提出使用装载工具(10),其包括设置在第一和第二板(12,13)之间的管状管道(10),并且用于致密化的薄基底 径向地 然后以这种方式装载的工具然后放置在具有连接到管状管道(11)的反应气体进入入口(21)的浸入式烘箱中的反应室(20)内,以使反应气体能够进入管道 沿着基本上径向的流动方向沿着基板(1)上的主面分布气体。 反应气体也可以在相反的方向上流动,即可以从其外壳(16)进入工具(10),并且可以经由管道(11)移除。

    METHOD OF DENSIFYING THIN POROUS SUBSTRATES BY CHEMICAL VAPOR INFILTRATION, AND A LOADING DEVICE FOR SUCH SUBSTRATES
    4.
    发明申请
    METHOD OF DENSIFYING THIN POROUS SUBSTRATES BY CHEMICAL VAPOR INFILTRATION, AND A LOADING DEVICE FOR SUCH SUBSTRATES 有权
    通过化学气相渗透法测量多孔基底的方法,以及用于这种基底的加载装置

    公开(公告)号:US20120171375A1

    公开(公告)日:2012-07-05

    申请号:US13420014

    申请日:2012-03-14

    CPC classification number: C23C16/045 C23C16/45578 C23C16/4587

    Abstract: To densify thin porous substrates (1) by chemical vapor infiltration, the invention proposes using loading tooling (10) comprising a tubular duct (10) disposed between first and second plates (12, 13) and around which the thin substrates for densification are disposed radially. The tooling as loaded in this way is then placed inside a reaction chamber (20) in an infiltration oven having a reactive gas admission inlet (21) connected to the tubular duct (11) to enable a reactive gas to be admitted into the duct which distributes the gas along the main faces on the substrates (1) in a flow direction that is essentially radial. The reactive gas can also flow in the opposite direction, i.e. it can be admitted into the tooling (10) from its outer envelope (16) and can be removed via the duct (11).

    Abstract translation: 为了通过化学气相渗透致密化多孔基底(1),本发明提出使用装载工具(10),其包括设置在第一和第二板(12,13)之间的管状管道(10),并且用于致密化的薄基底 径向地 然后以这种方式装载的工具然后放置在具有连接到管状管道(11)的反应气体进入入口(21)的浸入式烘箱中的反应室(20)内,以使反应气体能够进入管道 沿着基本上径向的流动方向沿着基板(1)上的主面分布气体。 反应气体也可以在相反的方向上流动,即可以从其外壳(16)进入工具(10),并且可以经由管道(11)移除。

    Method of densifying thin porous substrates by chemical vapor infiltration, and a loading device for such substrates
    5.
    发明授权
    Method of densifying thin porous substrates by chemical vapor infiltration, and a loading device for such substrates 有权
    通过化学气相渗透致密化多孔基材的方法,以及用于这种基材的加载装置

    公开(公告)号:US08491963B2

    公开(公告)日:2013-07-23

    申请号:US13420014

    申请日:2012-03-14

    CPC classification number: C23C16/045 C23C16/45578 C23C16/4587

    Abstract: To densify thin porous substrates (1) by chemical vapor infiltration, the invention proposes using loading tooling (10) comprising a tubular duct (10) disposed between first and second plates (12, 13) and around which the thin substrates for densification are disposed radially. The tooling as loaded in this way is then placed inside a reaction chamber (20) in an infiltration oven having a reactive gas admission inlet (21) connected to the tubular duct (11) to enable a reactive gas to be admitted into the duct which distributes the gas along the main faces on the substrates (1) in a flow direction that is essentially radial. The reactive gas can also flow in the opposite direction, i.e. it can be admitted into the tooling (10) from its outer envelope (16) and can be removed via the duct (11).

    Abstract translation: 为了通过化学气相渗透致密化多孔基底(1),本发明提出使用装载工具(10),其包括设置在第一和第二板(12,13)之间的管状管道(10),并且用于致密化的薄基底 径向地 然后以这种方式装载的工具然后放置在具有连接到管状管道(11)的反应气体进入入口(21)的浸入式烘箱中的反应室(20)内,以使反应气体能够进入管道 沿着基本上径向的流动方向沿着基板(1)上的主面分布气体。 反应气体也可以在相反的方向上流动,即可以从其外壳(16)进入工具(10),并且可以经由管道(11)移除。

    Method of densifying thin porous substrates by chemical vapor infiltration, and a loading device for such substrates
    6.
    发明授权
    Method of densifying thin porous substrates by chemical vapor infiltration, and a loading device for such substrates 有权
    通过化学气相渗透致密化多孔基材的方法,以及用于这种基材的加载装置

    公开(公告)号:US08163088B2

    公开(公告)日:2012-04-24

    申请号:US11884597

    申请日:2006-02-16

    CPC classification number: C23C16/045 C23C16/45578 C23C16/4587

    Abstract: To densify thin porous substrates (1) by chemical vapor infiltration, the invention proposes using loading tooling (10) comprising a tubular duct (10) disposed between first and second plates (12, 13) and around which the thin substrates for densification are disposed radially. The tooling as loaded in this way is then placed inside a reaction chamber (20) in an infiltration oven having a reactive gas admission inlet (21) connected to the tubular duct (11) to enable a reactive gas to be admitted into the duct which distributes the gas along the main faces on the substrates (1) in a flow direction that is essentially radial. The reactive gas can also flow in the opposite direction, i.e. it can be admitted into the tooling (10) from its outer envelope (16) and can be removed via the duct (11).

    Abstract translation: 为了通过化学气相渗透致密化多孔基底(1),本发明提出使用装载工具(10),其包括设置在第一和第二板(12,13)之间的管状管道(10),并且用于致密化的薄基底 径向地 然后以这种方式装载的工具然后放置在具有连接到管状管道(11)的反应气体进入入口(21)的浸入式烘箱中的反应室(20)内,以使反应气体能够进入管道 沿着基本上径向的流动方向沿着基板(1)上的主面分布气体。 反应气体也可以在相反的方向上流动,即可以从其外壳(16)进入工具(10),并且可以经由管道(11)移除。

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