公开(公告)号：US10457592B2

公开(公告)日：2019-10-29

申请号：US15029656

申请日：2014-10-14

Applicant: SAINT-GOBAIN GLASS FRANCE

Inventor： Lorenzo Canova ,  Driss Lamine ,  Nicolas Nadaud ,  Sébastien Roy ,  Nisita Wanakule

IPC: C03C17/36 ,  C03C17/34 ,  C23C14/08 ,  C23C14/06 ,  C23C14/58 ,  C23C14/18 ,  C23C14/35

Abstract: A process for obtaining an item including a substrate made of glass or glass ceramic coated on at least one portion of at least one of its faces with a stack of thin-layers including no silver layers and including at least one thin layer of a transparent electrically conductive oxide, the process including: a step of depositing the stack, in which step the thin layer of a transparent electrically conductive oxide and at least one thin homogenizing layer are deposited, the thin homogenizing layer being a metal layer or a layer based on a metal nitride other than aluminum nitride, or a layer based on metal carbide; then a heat treatment step in which the stack is exposed to radiation.

公开(公告)号：US20150239774A1

公开(公告)日：2015-08-27

申请号：US14382679

申请日：2013-03-01

Applicant: SAINT-GOBAIN GLASS FRANCE

Inventor： Driss Lamine ,  Sébastien Roy

IPC: C03C17/34 ,  C23C14/58 ,  C23C14/10 ,  C23C14/06 ,  C23C14/08

CPC classification number: C03C17/3435 ,  C03C2217/71 ,  C03C2217/948 ,  C23C14/0652 ,  C23C14/083 ,  C23C14/086 ,  C23C14/10 ,  C23C14/5806 ,  C23C14/5813 ,  C23C14/5826 ,  Y10T428/2495

Abstract: A glazing unit includes a glass substrate equipped on one of its faces, intended to form the face of the glazing unit in the use position, with a thin-film multilayer comprising, from the substrate, a film of a transparent electrically conductive oxide based on indium tin oxide of physical thickness e1 included in a range extending from 50 to 200 nm, a silicon-nitride barrier film of physical thickness e2, then a film based on silicon oxide, the thicknesses e1 and e2, expressed in nanometers, being such that 0.11≦e2/e1≦0.18.

Abstract translation: 玻璃单元包括装配在其一个表面上的玻璃基板，用于在使用位置形成玻璃窗单元的表面，薄膜多层包括从基板形成基于透明导电氧化物的膜，基于 物理厚度e1的铟锡氧化物包括在从50到200nm的范围内，物理厚度为e2的氮化硅阻挡膜，然后是基于氧化硅的膜，以纳米表示的厚度e1和e2使得 0.11＆nlE; e2 / e1＆nlE; 0.18。