公开(公告)号：US20230193454A1

公开(公告)日：2023-06-22

申请号：US18062292

申请日：2022-12-06

Applicant: OMEGA SA

Inventor： Loïc CURCHOD ,  Simon SPRINGER ,  Stephane LAUPER ,  Ahmad ODEH ,  Marion GSTALTER ,  Loïc OBERSON ,  Gregory KISSLING

IPC: C23C14/14 ,  C23C14/00 ,  C23C14/35 ,  C23C14/58

CPC classification number: C23C14/14 ,  C23C14/0015 ,  C23C14/352 ,  C23C14/5813

Abstract: A method for depositing a coating on a substrate (100), including successively depositing a thin intermetallic layer (110) on the substrate (100), so as to obtain an external part (10), and annealing the external part (10) in a dedicated enclosure.

公开(公告)号：US20180087149A1

公开(公告)日：2018-03-29

申请号：US15563504

申请日：2016-04-05

Applicant: IMOTT INC.

Inventor： Makoto MATSUO ,  Tatsuaki HAYASHIDA ,  Akiyoshi IIDA

IPC: C23C14/58 ,  C23C14/06 ,  C23C16/27 ,  C23C14/34 ,  C23C14/22 ,  C23C16/56

CPC classification number: C23C14/5813 ,  B23B27/14 ,  B23B27/20 ,  C23C14/04 ,  C23C14/06 ,  C23C14/0611 ,  C23C14/221 ,  C23C14/34 ,  C23C14/5846 ,  C23C14/588 ,  C23C16/04 ,  C23C16/27 ,  C23C16/272 ,  C23C16/56

Abstract: The purpose of the present invention is to obtain a protective film having a segmented structure that is stable in terms of strength and that prevents the destruction or damage of a groove structure due to load deformation stress from outside and inside forces, by means of, in particular, a structure that connects a side surface of a groove to the bottom section of the groove and a structure of the bottom section of the groove. The present invention is a protective film having a segmented structure, the film being formed by depositing a film on a base material, wherein the protective film is obtained by depositing the protective film, after machining a groove in the base material, forming spaces between the segmented protective film on the base material, and the vertical cross-sectional surface of a part where the groove side surface and the groove bottom surface intersect is connected by a downward convex curve and the vertical cross-sectional surface of the bottom section of the groove is a downward convex curve or a straight line.

公开(公告)号：US09840773B2

公开(公告)日：2017-12-12

申请号：US14277214

申请日：2014-05-14

Applicant: Tsinghua University ,  HON HAI PRECISION INDUSTRY CO., LTD.

Inventor： Jia-Ping Wang ,  Kai-Li Jiang ,  Qun-Qing Li ,  Shou-Shan Fan

IPC: C23C14/58 ,  C23C14/14 ,  C23C14/20 ,  C01G23/047 ,  C04B35/622 ,  C01G23/07 ,  C01F7/42 ,  C01G53/04 ,  B82Y30/00 ,  C04B35/628 ,  B82Y40/00

CPC classification number: C23C14/5813 ,  B82Y30/00 ,  B82Y40/00 ,  C01F7/42 ,  C01G23/047 ,  C01G23/07 ,  C01G53/04 ,  C01P2004/16 ,  C01P2004/64 ,  C04B35/62259 ,  C04B35/62876 ,  C04B35/62884 ,  C04B35/62897 ,  C04B2235/526 ,  C04B2235/5264 ,  C04B2235/5288 ,  C23C14/14 ,  C23C14/20 ,  Y10S977/762 ,  Y10S977/811 ,  Y10S977/888 ,  Y10S977/89 ,  Y10S977/896 ,  Y10S977/901

Abstract: The disclosure related to a method for making a nanowire structure. First, a free-standing carbon nanotube structure is suspended. Second, a metal layer is coated on a surface of the carbon nanotube structure. The metal layer is oxidized to grow metal oxide nanowires.

公开(公告)号：US20170348797A1

公开(公告)日：2017-12-07

申请号：US15538091

申请日：2016-01-11

Applicant: Schaeffler Technologies AG & Co. KG

Inventor： Holger Patzold

IPC: B23K26/00 ,  F01L1/12 ,  C23C14/58

CPC classification number: B23K26/355 ,  B23K26/359 ,  C23C14/5813 ,  C23C14/5873 ,  F01L1/12 ,  F01L1/16 ,  F01L1/18 ,  F01L2103/00 ,  F01L2810/02

Abstract: The invention relates to a method for producing a sliding surface on a machine element, in particular a cam follower, wherein the machine element is first provided with a coating on at least part of the surface of the machine element, into which coating a surface structure is then introduced by laser structuring. In order to be able to introduce a surface structure that does not penetrate the coating even in the case of low layer thicknesses (s1) of the coating, the introduction of the surface structure is performed by laser interference structuring.

公开(公告)号：US20160138155A1

公开(公告)日：2016-05-19

申请号：US14977096

申请日：2015-12-21

Applicant: Centro de Investigación Cientifica y de Educación Superior de Ensenada, Baja California

Inventor： Santiago CAMACHO LÓPEZ ,  Marco Antonio CAMACHO LÓPEZ

IPC: C23C14/58 ,  C23C14/35

CPC classification number: C23C14/5813 ,  B05D3/06 ,  C23C14/18 ,  C23C14/35 ,  C23C14/5853

Abstract: The present invention relates to processes for obtaining metal oxides by irradiation of low energy laser pulses of metal layers, wherein said metals can be formed as simple metals, alloys, or multilayers. The present invention performs the oxidation of a thin metal film deposited on a substrate; e.g., glass (SiO2) or silicon (Si) by a laser-irradiation time of a few nanoseconds to femtoseconds at high repetition rate, time necessary to achieve a stoichiometry and a well-defined microscopic structure. Through the processes of the invention, it is possible to obtain complex structures and metal oxides at room temperature in a very short time and with very low energy consumption.

公开(公告)号：US09328422B2

公开(公告)日：2016-05-03

申请号：US14193173

申请日：2014-02-28

Applicant: CORNING INCORPORATED

Inventor： Charles Andrew Paulson

IPC: B05D3/00 ,  C08J7/18 ,  G21H5/00 ,  C23C16/56 ,  C23C16/26 ,  C23C16/30 ,  C23C14/58

CPC classification number: C23C16/56 ,  C23C14/5813 ,  C23C16/26 ,  C23C16/308

Abstract: Optically transparent diamond-like carbon (DLC) thin films are formed using relatively low-temperature deposition conditions followed by a post-deposition bleaching step. The bleaching can include exposure of an as-deposited thin film to UV laser radiation, which reduces the concentration of defects in the film. The method is compatible with temperature-sensitive substrates, and can be used to form water clear DLC layers on glass substrates, for example, which can be used in display applications.

Abstract translation: 使用相对低温的沉积条件，然后进行后期漂白步骤，形成光学透明的类金刚石碳（DLC）薄膜。 漂白可以包括将沉积的薄膜暴露于UV激光辐射，这降低了膜中缺陷的浓度。 该方法与温度敏感性基材兼容，并且可用于在玻璃基板上形成水清洁DLC层，例如可用于显示应用中。

公开(公告)号：US20150293025A1

公开(公告)日：2015-10-15

申请号：US14435904

申请日：2013-12-11

Applicant: TORAY INDUSTRIES INC.

Inventor： Hirokazu Ninomiya ,  Yusuke Kawabata ,  Kiyohiko Ito ,  Yutaka Katayama

IPC: G01N21/65 ,  C23C14/34 ,  C23C14/58 ,  C23C14/22 ,  G01N21/03 ,  C23C16/48

CPC classification number: G01N21/658 ,  B82Y30/00 ,  B82Y40/00 ,  C23C14/086 ,  C23C14/20 ,  C23C14/205 ,  C23C14/22 ,  C23C14/34 ,  C23C14/562 ,  C23C14/58 ,  C23C14/5806 ,  C23C14/5813 ,  C23C16/48 ,  C23C16/545 ,  G01N21/03 ,  G01N21/554

Abstract: A metal dot substrate includes metal-containing metal dots having a maximum outside diameter and height of 0.1 nm to 1,000 nm formed on a substrate and located in a plurality of island regions.

Abstract translation: 金属点基板包括形成在基板上并且位于多个岛区中的最大外径和高度为0.1nm至1,000nm的含金属的金属点。

公开(公告)号：US09011649B2

公开(公告)日：2015-04-21

申请号：US13496090

申请日：2010-09-30

Applicant: Andriy Kharchenko ,  Anne Durandeau ,  Nicolas Nadaud

Inventor： Andriy Kharchenko ,  Anne Durandeau ,  Nicolas Nadaud

IPC: C23C14/14 ,  C03C17/00 ,  C23C14/54 ,  C03C17/245 ,  C23C14/18 ,  C23C14/58 ,  C23C14/06

CPC classification number: C03C17/002 ,  C03C17/245 ,  C03C2217/71 ,  C03C2218/154 ,  C03C2218/322 ,  C23C14/0635 ,  C23C14/0641 ,  C23C14/14 ,  C23C14/185 ,  C23C14/541 ,  C23C14/5813 ,  C23C14/5853 ,  Y10S977/755 ,  Y10S977/891 ,  Y10T428/24917

Abstract: The subject of the invention is a process for obtaining a substrate coated on at least part of its surface with at least one film of oxide of a metal M the physical thickness of which is 30 nm or less, said oxide film not being part of a multilayer comprising at least one silver film, said process comprising the following steps: at least one intermediate film of a material chosen from the metal M, a nitride of the metal M, a carbide of the metal M and an oxygen-substoichiometric oxide of the metal M is deposited by sputtering, said intermediate film not being deposited above or beneath a titanium-oxide-based film, the physical thickness of said intermediate film being 30 nm or less; and at least part of the surface of said intermediate film is oxidized using a heat treatment, during which said intermediate film is in direct contact with an oxidizing atmosphere, especially air, the temperature of said substrate during said heat treatment not exceeding 150° C.

Abstract translation: 本发明的主题是用至少一种金属M的氧化物的至少一部分获得涂覆在其表面的至少一部分的基板的方法，其物理厚度为30nm以下，所述氧化膜不是 所述方法包括以下步骤：选自金属M，金属M的氮化物，金属M的碳化物和氧化合物的氧化物的至少一种中间膜 金属M通过溅射沉积，所述中间膜不沉积在氧化钛基膜之上或之下，所述中间膜的物理厚度为30nm或更小; 并且所述中间膜的表面的至少一部分通过热处理而被氧化，在此期间所述中间膜与氧化气氛，特别是空气直接接触，所述热处理期间所述基板的温度不超过150℃。

公开(公告)号：US20140227457A2

公开(公告)日：2014-08-14

申请号：US13715568

申请日：2012-12-14

Applicant: Centro de Investigacion Cientifica y de Educacion Superior de Ensenada, Baja California

Inventor： Santiago CAMACHO LOPEZ ,  Marco Antonio CAMACHO LOPEZ

IPC: B05D3/06

CPC classification number: C23C14/5813 ,  B05D3/06 ,  C23C14/18 ,  C23C14/35 ,  C23C14/5853

Abstract: The present invention relates to processes for obtaining metal oxides by irradiation of low energy laser pulses of metal layers, wherein said metals can be formed as simple metals, alloys, or multilayers. The present invention performs the oxidation of a thin metal film deposited on a substrate; e.g., glass (SiO2) or silicon (Si) by a laser-irradiation time of a few nanoseconds to femtoseconds at high repetition rate, time necessary to achieve a stoichiometry and a well-defined microscopic structure. Through the processes of the invention, it is possible to obtain complex structures and metal oxides at room temperature in a very short time and with very low energy consumption.

Abstract translation: 本发明涉及通过照射金属层的低能量激光脉冲来获得金属氧化物的方法，其中所述金属可以形成为简单金属，合金或多层。 本发明对沉积在基板上的薄金属膜进行氧化; 例如通过几个纳秒的激光照射时间以高重复率飞秒的玻璃（SiO 2）或硅（Si），达到化学计量所需的时间和明确的微观结构。 通过本发明的方法，可以在非常短的时间内以非常低的能量消耗在室温下获得复杂的结构和金属氧化物。

公开(公告)号：US08207003B2

公开(公告)日：2012-06-26

申请号：US12297989

申请日：2007-04-23

Applicant: Naoki Fukunaga ,  Hiroshi Osawa

Inventor： Naoki Fukunaga ,  Hiroshi Osawa

IPC: H01L21/00

CPC classification number: C23C14/5813 ,  C23C14/086 ,  H01L33/0095 ,  H01L33/32 ,  H01L33/42 ,  H01L2933/0016

Abstract: Provided are a method of manufacturing a gallium nitride-based compound semiconductor light-emitting device with a low driving voltage (Vf) and high light outcoupling efficiency, a gallium nitride-based compound semiconductor light-emitting device, and a lamp. In the method of manufacturing the gallium nitride-based compound semiconductor light-emitting device, a transparent conductive oxide film 15 including a dopant is laminated on a p-type semiconductor layer 14 of a gallium nitride-based compound semiconductor device 1. The transparent conductive oxide film 15 is subjected to a laser annealing process using a laser after the lamination of the transparent conductive oxide film 15.

Abstract translation: 提供一种制造具有低驱动电压（Vf）和高的光输出耦合效率的氮化镓基化合物半导体发光器件的方法，氮化镓基化合物半导体发光器件和灯。 在制造氮化镓系化合物半导体发光元件的方法中，在氮化镓系化合物半导体器件1的p型半导体层14上层叠包含掺杂剂的透明导电氧化物膜15.透明导电性 在透明导电氧化物膜15层压之后，使用激光对氧化膜15进行激光退火处理。