公开(公告)号：US20150069382A1

公开(公告)日：2015-03-12

申请号：US14467848

申请日：2014-08-25

Applicant: SAMSUNG DISPLAY CO., LTD.

Inventor： Byung-Du AHN ,  Ji-Hun LIM ,  Jin-Hyun PARK ,  Hyun-Jae KIM

IPC: H01L29/786 ,  H01L27/12

CPC classification number: H01L29/78633 ,  H01L27/1218 ,  H01L27/1225 ,  H01L27/1262 ,  H01L29/7869

Abstract: A thin film transistor substrate includes a substrate, a data line disposed on the substrate and which extends substantially in a predetermined direction, a light blocking layer disposed on the substrate and including a metal oxide including zinc manganese oxide, zinc cadmium oxide, zinc phosphorus oxide or zinc tin oxide, a gate electrode disposed on the light blocking layer, a signal electrode including a source electrode and a drain electrode spaced apart from the source electrode, where the source electrode is connected to the data line, and a semiconductor pattern disposed between the source electrode and the drain electrode.

Abstract translation: 薄膜晶体管基板包括基板，设置在基板上并且基本上沿预定方向延伸的数据线，设置在基板上的遮光层，并且包括包含氧化锰锌，氧化锌锌，氧化锌锌的金属氧化物 或氧化锌锡，设置在所述遮光层上的栅电极，包括源电极和与所述源电极间隔开的漏电极的信号电极，所述源电极与所述数据线连接，以及设置在所述源电极之间的半导体图案， 源电极和漏电极。

公开(公告)号：US20150064839A1

公开(公告)日：2015-03-05

申请号：US14333744

申请日：2014-07-17

Applicant: SAMSUNG DISPLAY CO., LTD. ,  Industry-Academic Cooperation Foundation, Yonsei University

Inventor： Chaun-Gi CHOI ,  Yeon-Gon MO ,  Hyun-Jae KIM ,  Hyun-Soo LIM ,  Si-Joon KIM ,  Tae-Soo JUNG ,  You-Seung RIM

IPC: H01L29/24 ,  H01L21/02

CPC classification number: H01L29/24 ,  H01L21/02565 ,  H01L21/02628 ,  H01L29/66969 ,  H01L29/78693

Abstract: A method of forming a tin oxide semiconductor thin film includes preparing a precursor solution including a tin oxide semiconductor, coating the precursor solution on a substrate; and performing a heat treatment on the substrate coated with the precursor solution. A tin compound having a different tin valence according to a semiconductor type of the tin oxide semiconductor may be used in the precursor solution.

Abstract translation: 形成氧化锡半导体薄膜的方法包括制备包含氧化锡半导体的前体溶液，将前体溶液涂覆在基板上; 并在涂覆有前体溶液的基材上进行热处理。 可以在前体溶液中使用根据氧化锡半导体的半导体类型具有不同锡价的锡化合物。

公开(公告)号：US20150011044A1

公开(公告)日：2015-01-08

申请号：US14097685

申请日：2013-12-05

Applicant: Industry-Academic Cooperation Foundation, Yonsei University ,  Samsung Display Co., Ltd.

Inventor： Chaun-Gi CHOI ,  Yeon-Gon MO ,  Hyun-Jae KIM ,  Hyun-Soo LIM ,  Si-Joon KIM ,  Tae-Soo JUNG ,  You-Seung RIM

IPC: H01L21/02

CPC classification number: H01L21/02565 ,  H01L21/02628

Abstract: Provided is a composition for forming tin oxide semiconductor including a tin precursor compound, an antimony precursor compound, and a solvent, according to an aspect of the present disclosure. Also provided is a method of forming a tin oxide semiconductor thin film. The method includes preparing a composition including a tin precursor compound and an antimony precursor compound dissolved in a solvent; disposing the composition on a substrate; and performing a heat treatment on the substrate coated with the composition.

Abstract translation: 提供根据本公开的一个方面的用于形成包含锡前体化合物，锑前体化合物和溶剂的氧化锡半导体的组合物。 还提供了形成氧化锡半导体薄膜的方法。 该方法包括制备包含溶解在溶剂中的锡前体化合物和锑前体化合物的组合物; 将组合物置于基材上; 并在涂覆有该组合物的基材上进行热处理。

公开(公告)号：US20150140699A1

公开(公告)日：2015-05-21

申请号：US14455805

申请日：2014-08-08

Applicant: Samsung Display Co., Ltd. ,  Industry-Academic Cooperation Foundation, Yonsei University

Inventor： Yeon-Hong Kim ,  Byung-Du AHN ,  Hyeon-Sik KIM ,  Yeon-Gon MO ,  Ji-Hun LIM ,  Hyun-Jae KIM

IPC: H01L21/02 ,  H01L51/56

CPC classification number: H01L21/02664 ,  H01L21/02422 ,  H01L21/02488 ,  H01L21/02554 ,  H01L21/02565 ,  H01L2227/323

Abstract: A method of forming an oxide semiconductor device may be provided. In the method, a substrate comprising a first major surface and a second major surface that faces away from the first major surface may be provided. An oxide semiconductor device may be formed over the first major surface to provide an intermediate device, and the semiconductor device may comprise an oxide active layer. The intermediate device may be subjected to ultraviolet (UV) light (e.g., ultraviolet ray irradiation process) for a first period, and subjected to heat (e.g., thermal treatment process) for a second period. The first and second periods may at least partly overlap.

Abstract translation: 可以提供形成氧化物半导体器件的方法。 在该方法中，可以提供包括第一主表面和远离第一主表面的第二主表面的基板。 可以在第一主表面上形成氧化物半导体器件以提供中间器件，并且半导体器件可以包括氧化物有源层。 中间装置可以经受第一阶段的紫外线（UV）光（例如紫外线照射处理），并进行第二时段的加热（例如热处理）。 第一和第二周期可以至少部分重叠。