公开(公告)号：US20160329430A1

公开(公告)日：2016-11-10

申请号：US15069043

申请日：2016-03-14

Applicant: SAMSUNG DISPLAY CO., LTD.

Inventor： Yungbin CHUNG ,  Seungkyeng CHO ,  Chulhyun BAEK ,  Injun CHOI ,  Bogeon JEON ,  Eunjeong CHO ,  Sunghoon YANG

IPC: H01L29/786 ,  H01L23/31 ,  H01L27/32 ,  G02F1/1341 ,  H01L21/02 ,  H01L27/12 ,  G02F1/1343 ,  G02F1/1368 ,  H01L23/29 ,  H01L29/66

CPC classification number: H01L29/78606 ,  G02F1/133345 ,  G02F1/1341 ,  G02F1/134309 ,  G02F1/1368 ,  H01L21/0217 ,  H01L23/291 ,  H01L23/3171 ,  H01L27/1248 ,  H01L27/1262 ,  H01L27/322 ,  H01L27/3258 ,  H01L27/3262 ,  H01L29/66765 ,  H01L29/78669

Abstract: A display device includes: a first substrate; a gate electrode on the first substrate; a gate insulating layer on the gate electrode; a semiconductor layer on the gate insulating layer; a source electrode and a drain electrode spaced apart from each other on the semiconductor layer; a first passivation layer including a silicon nitride-based material and on the semiconductor layer, the source electrode, and the drain electrode; a second passivation layer including a silicon nitride-based material and on the first passivation layer; and a third passivation layer including a silicon nitride-based material and on the second passivation layer, where a content ratio of silicon in the first passivation layer is higher than a content ratio of silicon in the second passivation layer, and the content ratio of silicon in the second passivation layer is higher than a content ratio of silicon in the third passivation layer.

Abstract translation: 一种显示装置，包括：第一基板; 第一基板上的栅电极; 栅电极上的栅极绝缘层; 栅极绝缘层上的半导体层; 在半导体层上彼此隔开的源电极和漏电极; 包括氮化硅基材料的第一钝化层，在所述半导体层上，所述源电极和所述漏电极; 包括氮化硅基材料的第二钝化层和在所述第一钝化层上; 以及包括氮化硅基材料的第三钝化层，并且在所述第二钝化层上，其中所述第一钝化层中的硅的含量比率高于所述第二钝化层中的硅的含量比，并且所述硅的含量比 在第二钝化层中比第三钝化层中的硅的含量比高。