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公开(公告)号:US10446638B2
公开(公告)日:2019-10-15
申请号:US16041968
申请日:2018-07-23
Applicant: SAMSUNG DISPLAY CO., LTD.
Inventor: Jong Oh Seo , Byung Soo So , Dong-Min Lee , Dong-Sung Lee
IPC: H01L27/32 , H01L51/56 , H01L51/52 , G09G3/3266 , G09G3/3291
Abstract: An organic light emitting diode display includes a substrate, a scan line on the substrate to transfer a scan signal, a data line on the substrate to transfer a data signal, a switching transistor connected with the scan line and the data line, a driving transistor connected with the switching transistor, and an organic light emitting diode electrically connected to the driving transistor. The driving transistor may include a first semiconductor layer, the switching transistor may include a second semiconductor layer, and the first semiconductor layer may have a surface roughness that is greater than that of the second semiconductor layer.
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公开(公告)号:US11706949B2
公开(公告)日:2023-07-18
申请号:US17192424
申请日:2021-03-04
Applicant: Samsung Display Co., LTD.
Inventor: Jong Oh Seo , Byung Soo So
IPC: H01L27/32 , H10K59/121 , H10K59/131 , H10K71/00 , G09G3/3266 , G09G3/3275 , G09G3/3225 , H01L29/66 , H01L27/12 , H01L29/786 , H10K59/12
CPC classification number: H10K59/1213 , H10K59/131 , H10K71/00 , G09G3/3225 , G09G3/3266 , G09G3/3275 , G09G2300/0426 , H01L27/1222 , H01L27/1274 , H01L29/66757 , H01L29/78615 , H01L29/78675 , H10K59/1201
Abstract: A display device and a method of manufacturing a display device are provided. A display device includes a lower conductive pattern disposed on a substrate, a lower insulating layer disposed on the lower conductive pattern, the lower insulating layer including a first lower insulating pattern including an overlapping region overlapping the lower conductive pattern, and a protruding region. The display device includes a semiconductor pattern disposed on the first lower insulating pattern and having a side surface, the side surface being aligned with a side surface of the first lower insulating pattern or disposed inward from the side surface of the first lower insulating pattern, a gate insulating layer disposed on the semiconductor pattern, a gate electrode disposed on the gate insulating layer, and an empty space disposed between the substrate and the protruding region of the first lower insulating pattern.
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公开(公告)号:US10411133B2
公开(公告)日:2019-09-10
申请号:US15948097
申请日:2018-04-09
Applicant: Samsung Display Co., Ltd.
Inventor: Jong Oh Seo , Byung Soo So , Dong-Min Lee , Dong-Sung Lee
IPC: H01L27/14 , H01L29/786 , H01L27/12 , H01L21/02 , H01L29/66
Abstract: A manufacturing method of a polysilicon layer of a thin film transistor of a display device, includes: irradiating a first excimer laser beam having a first energy density to an amorphous silicon layer including an oxidation layer thereon, to form a first polysilicon layer including thereon portions of the oxidation layer at grain boundaries of the first polysilicon layer; removing the portions of the oxidation layer at the grain boundaries of the first polysilicon layer; and irradiating a second excimer laser beam having a second energy density of 80% to 100% of the first energy density to the first polysilicon layer from which the portions of the oxidation layer at the grain boundaries thereof are removed, to form a second polysilicon layer as the polysilicon layer of the thin film transistor.
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公开(公告)号:US11715739B2
公开(公告)日:2023-08-01
申请号:US17338738
申请日:2021-06-04
Applicant: Samsung Display Co., Ltd.
Inventor: Jong Oh Seo , Jong Jun Baek
IPC: H01L27/32 , H01L51/56 , H01L27/12 , H01L29/786 , H01L21/3215 , H01L21/02 , H10K59/124 , H10K71/00 , H10K59/123 , H10K59/12
CPC classification number: H01L27/1222 , H01L21/02068 , H01L21/02532 , H01L21/02658 , H01L21/02675 , H01L21/32155 , H01L27/1274 , H01L29/78696 , H10K59/124 , H10K71/00 , H10K59/1201 , H10K59/123
Abstract: An embodiment provides a manufacturing method of a polycrystalline silicon layer, including: forming a first amorphous silicon layer on a substrate; doping an N-type impurity into the first amorphous silicon layer; forming a second amorphous silicon layer on the n-doped first amorphous silicon layer; doping a P-type impurity into the second amorphous silicon layer; and crystalizing the n-doped first amorphous silicon layer and the p-doped second amorphous silicon layer by irradiating a laser beam onto n-doped first amorphous silicon layer and the p-doped second amorphous silicon layer to form a polycrystalline silicon layer.
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公开(公告)号:US10539803B2
公开(公告)日:2020-01-21
申请号:US15148480
申请日:2016-05-06
Applicant: SAMSUNG DISPLAY CO., LTD.
Inventor: Byung Soo So , Jong Oh Seo , Dong-Min Lee , Sang Ho Jeon
Abstract: An optical system for a laser apparatus includes: a long-short axis reversing module that includes a splitter, a first mirror, and a second mirror positioned in a propagation path of an incident laser beam, where the first mirror includes a first submirror and a second submirror connected to each other at a predetermined angle therebetween. The optical system converts an incident laser beam having an asymmetric energy distribution into an emitted laser beam with a symmetric energy distribution.
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公开(公告)号:US20170075124A1
公开(公告)日:2017-03-16
申请号:US15148480
申请日:2016-05-06
Applicant: SAMSUNG DISPLAY CO., LTD.
Inventor: BYUNG SOO SO , Jong Oh Seo , Dong-Min Lee , Sang Ho Jeon
Abstract: An optical system for a laser apparatus includes: a long-short axis reversing module that includes a splitter, a first mirror, and a second mirror positioned in a propagation path of an incident laser beam, where the first mirror includes a first submirror and a second submirror connected to each other at a predetermined angle therebetween. The optical system converts an incident laser beam having an asymmetric energy distribution into an emitted laser beam with a symmetric energy distribution.
Abstract translation: 一种用于激光装置的光学系统包括:长短轴反转模块,其包括位于入射激光束的传播路径中的分离器,第一反射镜和第二反射镜,其中第一反射镜包括第一子反射镜和 第二子镜以它们之间的预定角度彼此连接。 光学系统将具有不对称能量分布的入射激光束转换成具有对称能量分布的发射激光束。
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公开(公告)号:US12211943B2
公开(公告)日:2025-01-28
申请号:US17665350
申请日:2022-02-04
Applicant: Samsung Display Co., Ltd.
Inventor: Jong Oh Seo , Jang Hyun Kim , Jae Woo Jeong , Jong Hoon Choi
IPC: H01L29/786 , H01L27/12 , H10K59/121
Abstract: A display device includes a substrate, a semiconductor layer, an insulating layer, and a conductive layer. The semiconductor layer is disposed on the substrate, includes a channel of a first transistor, and includes a channel of a second transistor. The insulating layer is disposed on the semiconductor layer. The conductive layer is disposed on the insulating layer, includes a gate electrode of the first transistor, and includes a gate electrode of the second transistor. The channel of the first transistor includes a first first-element impurity ion and a second-element impurity ion different from the first first-element impurity ion. The channel of the second transistor includes a second first-element impurity ion identical to the first first-element impurity ion.
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公开(公告)号:US20230005966A1
公开(公告)日:2023-01-05
申请号:US17665350
申请日:2022-02-04
Applicant: Samsung Display Co., Ltd.
Inventor: Jong Oh Seo , Jang Hyun Kim , Jae Woo Jeong , Jong Hoon Choi
Abstract: A display device includes a substrate, a semiconductor layer, an insulating layer, and a conductive layer. The semiconductor layer is disposed on the substrate, includes a channel of a first transistor, and includes a channel of a second transistor. The insulating layer is disposed on the semiconductor layer. The conductive layer is disposed on the insulating layer, includes a gate electrode of the first transistor, and includes a gate electrode of the second transistor. The channel of the first transistor includes a first first-element impurity ion and a second-element impurity ion different from the first first-element impurity ion. The channel of the second transistor includes a second first-element impurity ion identical to the first first-element impurity ion.
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公开(公告)号:US20220199721A1
公开(公告)日:2022-06-23
申请号:US17471055
申请日:2021-09-09
Applicant: Samsung Display Co., Ltd.
Inventor: Jong Jun BAEK , Jong Oh Seo
IPC: H01L27/32 , H01L29/66 , H01L29/786
Abstract: A method of manufacturing a polycrystalline silicon layer, includes forming an amorphous silicon layer on a substrate; doping the amorphous silicon layer with at least one impurity; cleaning the amorphous silicon layer with hydrofluoric acid; rinsing the amorphous silicon layer with hydrogen-added deionized water; and forming a polycrystalline silicon layer by irradiating a laser beam onto the amorphous silicon layer.
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