公开(公告)号：US12208466B2

公开(公告)日：2025-01-28

申请号：US17314559

申请日：2021-05-07

Applicant: Samsung Display Co., Ltd.

Inventor： Ji-Hwan Kim ,  Byung Soo So ,  Jonghoon Choi

IPC: B23K26/064 ,  B23K26/00 ,  B23K101/40

Abstract: A laser irradiation apparatus includes a laser beam generator that generates a first laser beam, a beam expander that expands the first laser beam and outputs the expanded first laser beam as a second laser beam, a beam splitter that splits the second laser beam into third laser beams and outputs the third laser beams, and a beam condenser that condenses the third laser beams and outputs condensed third laser beams. The beam expander includes a first lens having a first focal length and a second lens having a second focal length. The first lens is disposed between the laser beam generator and the second lens, the second lens is disposed between the first lens and the beam splitter, and the laser beam generator is spaced apart from the first lens by the first focal length.

公开(公告)号：US11610919B2

公开(公告)日：2023-03-21

申请号：US17240847

申请日：2021-04-26

Applicant: Samsung Display Co., Ltd.

Inventor： Jonghoon Choi ,  Jongoh Seo ,  Ji-Hwan Kim ,  Jongjun Baek ,  Byung Soo So

IPC: H01L27/12

Abstract: A display device may include a substrate, a buffer layer on the substrate, a first active pattern on the buffer layer, the first active pattern having a first thickness, a second active pattern on the buffer layer spaced from the first active pattern and having a second thickness smaller than the first thickness, a first gate insulating layer on the first active pattern and the second active pattern, a first gate electrode on the first gate insulating layer, the first gate electrode overlapping the first active pattern, and a second gate electrode on the first gate insulating layer, the second gate electrode overlapping the second active pattern.

公开(公告)号：US12224174B2

公开(公告)日：2025-02-11

申请号：US18502583

申请日：2023-11-06

Applicant: Samsung Display Co., LTD. ,  Industry-Academic Cooperation Foundation, Yonsei University

Inventor： Mann Ho Cho ,  Kwang Sik Jeong ,  Hyeon Sik Kim ,  Hyun Eok Shin ,  Byung Soo So ,  Ju Hyun Lee

IPC: H01L21/02

Abstract: A method of manufacturing a stacked structure includes forming a first metal buffer layer including crystal grains on a base substrate, forming a second metal buffer material layer on the first metal buffer layer, and crystallizing the second metal buffer material layer to form a second metal buffer layer, wherein the second metal buffer material layer includes crystal grains, and a density of the crystal grains of the second metal buffer material layer is lower than a density of the crystal grains of the first metal buffer layer.

公开(公告)号：US11171000B2

公开(公告)日：2021-11-09

申请号：US16864812

申请日：2020-05-01

Applicant: Samsung Display Co., LTD.

Inventor： Jongoh Seo ,  Jonghoon Choi ,  Ji-Hwan Kim ,  Byung Soo So ,  Dong-Min Lee ,  Dong-Sung Lee

IPC: H01L21/02

Abstract: A laser crystallization system includes a transfer part that transfers a substrate on which an amorphous silicon thin film is deposited into a chamber, a laser irradiation part that irradiates an excimer laser to the substrate for crystallization of the amorphous silicon thin film in the chamber, a stage that supports the substrate in the chamber, a measuring part that measures a light transmittance value of the substrate, and a controller that controls the laser irradiation part to irradiate the excimer laser to the substrate when the light transmittance value is equal to or lower than a reference transmittance value and controls the laser irradiation part not to irradiate the excimer laser to the substrate when the light transmittance value is higher than the reference transmittance value.

公开(公告)号：US12058888B2

公开(公告)日：2024-08-06

申请号：US17503358

申请日：2021-10-18

Applicant: Samsung Display Co., Ltd.

Inventor： Dong-Sung Lee ,  Seo Jong Oh ,  Byung Soo So ,  Dong-min Lee

IPC: H10K59/12 ,  H01L21/02 ,  H01L29/66 ,  H01L29/786

CPC classification number: H10K59/12 ,  H01L21/02057 ,  H01L21/02532 ,  H01L21/02592 ,  H01L21/02675 ,  H01L29/66757 ,  H01L29/78675

Abstract: A method of manufacturing a polycrystalline silicon layer for a display device includes the steps of forming an amorphous silicon layer on a substrate, cleaning the amorphous silicon layer with hydrofluoric acid, rinsing the amorphous silicon layer with hydrogenated deionized water, and irradiating the amorphous silicon layer with a laser beam to form a polycrystalline silicon layer.

公开(公告)号：US11942481B2

公开(公告)日：2024-03-26

申请号：US17510995

申请日：2021-10-26

Applicant: Samsung Display Co., LTD.

Inventor： Dong-Sung Lee ,  Jongoh Seo ,  Byung Soo So ,  Dong-min Lee ,  Yeon Hee Jeon ,  Jonghoon Choi

IPC: H01L21/00 ,  H01L21/02 ,  H01L27/12 ,  H01L29/04 ,  H01L29/786

CPC classification number: H01L27/1222 ,  H01L21/02592 ,  H01L21/02675 ,  H01L27/1274 ,  H01L29/045 ,  H01L29/78675

Abstract: A display device may include a thin film transistor disposed on a substrate, and a display element electrically connected to the thin film transistor. The thin film transistor may include an active pattern including polycrystalline silicon, a gate insulation layer disposed on the active pattern, and a gate electrode disposed on the gate insulation layer. An average value of grain sizes of the active pattern may be in a range of about 400 nm to about 800 nm. An RMS value of a surface roughness of the active pattern may be about 4 nm or less. A method of manufacturing a polycrystalline silicon layer may include cleaning an amorphous silicon layer with hydrofluoric acid, rinsing the amorphous silicon layer with hydrogenated deionized water, and irradiating the amorphous silicon layer with a laser beam having an energy density of about 440 mJ/cm2 to about 490 mJ/cm2.

公开(公告)号：US11804389B2

公开(公告)日：2023-10-31

申请号：US16535021

申请日：2019-08-07

Applicant: Samsung Display Co., Ltd.

Inventor： Byung Soo So ,  In Cheol Ko ,  Jong Jun Baek ,  Jae Woo Jeong

IPC: H01L21/67 ,  H05B6/80 ,  H01L29/786 ,  H01L27/12

CPC classification number: H01L21/67115 ,  H05B6/80 ,  H01L27/124 ,  H01L27/1222 ,  H01L29/78672

Abstract: An annealing apparatus includes: a main body configured to receive a substrate; a microwave generating unit configured to generate microwaves to be transmitted to the main body; an incidence unit configured to transmit the microwaves from the microwave generating unit to the main body; and a diffraction unit disposed between the incident unit and the main body. The diffraction unit is configured to pass the microwaves therethrough before they are transmitted to the main body.

公开(公告)号：US11183515B2

公开(公告)日：2021-11-23

申请号：US16821484

申请日：2020-03-17

Applicant: Samsung Display Co., LTD.

Inventor： Dong-Sung Lee ,  Jongoh Seo ,  Byung Soo So ,  Dong-min Lee ,  Yeon Hee Jeon ,  Jonghoon Choi

IPC: H01L21/00 ,  H01L27/12 ,  H01L29/786 ,  H01L21/02 ,  H01L29/04

Abstract: A display device may include a thin film transistor disposed on a substrate, and a display element electrically connected to the thin film transistor. The thin film transistor may include an active pattern including polycrystalline silicon, a gate insulation layer disposed on the active pattern, and a gate electrode disposed on the gate insulation layer. An average value of grain sizes of the active pattern may be in a range of about 400 nm to about 800 nm. An RMS value of a surface roughness of the active pattern may be about 4 nm or less. A method of manufacturing a polycrystalline silicon layer may include cleaning an amorphous silicon layer with hydrofluoric acid, rinsing the amorphous silicon layer with hydrogenated deionized water, and irradiating the amorphous silicon layer with a laser beam having an energy density of about 440 mJ/cm2 to about 490 mJ/cm2.

公开(公告)号：US10539803B2

公开(公告)日：2020-01-21

申请号：US15148480

申请日：2016-05-06

Applicant: SAMSUNG DISPLAY CO., LTD.

Inventor： Byung Soo So ,  Jong Oh Seo ,  Dong-Min Lee ,  Sang Ho Jeon

IPC: G02B27/09 ,  H01S3/00 ,  G02B17/00

Abstract: An optical system for a laser apparatus includes: a long-short axis reversing module that includes a splitter, a first mirror, and a second mirror positioned in a propagation path of an incident laser beam, where the first mirror includes a first submirror and a second submirror connected to each other at a predetermined angle therebetween. The optical system converts an incident laser beam having an asymmetric energy distribution into an emitted laser beam with a symmetric energy distribution.

公开(公告)号：US09202823B2

公开(公告)日：2015-12-01

申请号：US14479557

申请日：2014-09-08

Applicant: SAMSUNG DISPLAY CO., LTD.

Inventor： Byung Soo So ,  Jong Hyun Choi ,  Shin Moon Kang ,  IL Hun Seo

IPC: H01L27/12

CPC classification number: H01L27/1237 ,  H01L27/1255 ,  H01L27/1274

Abstract: A thin film transistor array panel includes a plurality of pixels on a substrate. Each pixel of the plurality of pixels includes a driving and a switching thin film transistor. The driving thin film transistor includes a first semiconductor including first source and drain regions, a first gate electrode overlapping the first semiconductor, a gate insulating layer between the first semiconductor and the first gate electrode, an oxide layer between the first semiconductor and the gate insulating layer, and first source and drain electrodes. The switching thin film transistor includes a second semiconductor including second source and drain regions, a second gate electrode overlapping the second semiconductor, and second source and drain electrodes. The switching thin film transistor includes the gate insulating layer between the second semiconductor and the second gate electrode. The gate insulating layer contacts an upper portion of the second semiconductor.

Abstract translation: 薄膜晶体管阵列面板包括在基板上的多个像素。 多个像素中的每个像素包括驱动和开关薄膜晶体管。 驱动薄膜晶体管包括：包括第一源极和漏极区域的第一半导体，与第一半导体重叠的第一栅极电极，在第一半导体和第一栅电极之间的栅极绝缘层，第一半导体和栅极绝缘之间的氧化物层 层和第一源极和漏极。 开关薄膜晶体管包括包括第二源极和漏极区域的第二半导体，与第二半导体重叠的第二栅极电极以及第二源极和漏极电极。 开关薄膜晶体管包括在第二半导体和第二栅电极之间的栅极绝缘层。 栅绝缘层接触第二半导体的上部。