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公开(公告)号:US12120919B2
公开(公告)日:2024-10-15
申请号:US17679691
申请日:2022-02-24
Applicant: Samsung Display Co., Ltd.
Inventor: Jaehwan Chu , Meejae Kang , Keunwoo Kim , Doona Kim , Sangsub Kim , Hanbit Kim , Dokyeong Lee , Yongsu Lee
IPC: H10K59/12 , H10K59/121
CPC classification number: H10K59/1213 , H10K59/1216 , H10K59/1201
Abstract: A method of manufacturing a display apparatus includes forming a first photosensitive pattern and a second photosensitive pattern of different thicknesses on an active layer; forming a driving semiconductor layer and a compensation semiconductor layer using the first photosensitive pattern and the second photosensitive pattern as masks to etch the active layer; exposing an upper surface of the driving semiconductor layer by etching the first photosensitive pattern and forming a third photosensitive pattern by etching at least a portion of the second photosensitive pattern; forming a first insulating layer on the driving semiconductor layer and the third photosensitive pattern; exposing an upper surface of the compensation semiconductor layer by stripping the third photosensitive pattern; and forming a second insulating layer on the first insulating layer and the compensation semiconductor layer.
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公开(公告)号:US11864423B2
公开(公告)日:2024-01-02
申请号:US17571895
申请日:2022-01-10
Applicant: Samsung Display Co., Ltd.
Inventor: Thanh Tien Nguyen , Meejae Kang , Yongsu Lee , Sanggun Choi
IPC: H01L27/14 , H10K59/121 , H01L27/12 , H01L29/786
CPC classification number: H10K59/1213 , H01L27/1262 , H01L29/78603 , H01L29/78642 , H01L27/1274
Abstract: A thin film transistor substrate includes: a substrate, a first electrode disposed on the substrate, a bank disposed on the substrate and having an inclined surface inclined at an angle with respect to the substrate, a second electrode disposed on the bank, an active pattern electrically connected to the first electrode and the second electrode, disposed on the inclined surface, and including a first conductive region and a second conductive region in which impurities are doped, and a channel region between the first conductive region and the second conductive region, and a gate electrode overlapping at least a portion of the channel region of the active pattern. The inclined surface extends in a first direction in a plan view. The first conductive region, the channel region, and the second conductive region are sequentially disposed on the inclined surface along a second direction that crosses the first direction.
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公开(公告)号:US11617289B2
公开(公告)日:2023-03-28
申请号:US17244013
申请日:2021-04-29
Applicant: Samsung Display Co., Ltd.
Inventor: Keunwoo Kim , Doo-Na Kim , Meejae Kang , Thanh Tien Nguyen
IPC: G09G3/3258 , G09G3/3266
Abstract: A display device includes a pixel including a pixel driving transistor and a pixel switching transistor, the pixel driving transistor including a first active layer including a first channel area having a first length, a first gate insulating layer on the first active layer, a first gate electrode on the first gate insulating layer, a first source electrode and a first drain electrode above the first gate electrode, the pixel switching transistor including a second active layer including a second channel area having a second length that is shorter than the first length, a second gate insulating layer on the second active layer, a second gate electrode on the second gate insulating layer, a second source and a second drain electrode above the second gate electrode, and wherein the pixel driving transistor and the pixel switching transistor each include a P-MOS transistor.
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公开(公告)号:US11411122B2
公开(公告)日:2022-08-09
申请号:US17086545
申请日:2020-11-02
Applicant: SAMSUNG DISPLAY CO., LTD.
Inventor: Jaeseob Lee , Meejae Kang , Yoonho Khang , Keunwoo Kim , Hanbit Kim , Thanhtien Nguyen
IPC: H01L29/786 , H01L27/32
Abstract: A display device including: a first thin film transistor (TFT) including a first semiconductor layer and a first gate electrode, the first semiconductor layer including a first channel region, a first source region, and a first drain region; a third TFT including a third semiconductor layer and a third gate electrode, the third semiconductor layer including a third channel region, a third source region, and a third drain region, wherein a leakage current of the third TFT in an off-state is less than a leakage current of the first TFT in an off-state; and a pixel electrode connected to one of the first source region and the first drain region, wherein the one of the first source region and the first drain region is connected to the third TFT.
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公开(公告)号:US11538413B1
公开(公告)日:2022-12-27
申请号:US17701935
申请日:2022-03-23
Applicant: SAMSUNG DISPLAY CO., LTD.
Inventor: Keunwoo Kim , Meejae Kang , Dokyeong Lee , Taewook Kang
IPC: G09G3/3233 , G09G3/3266 , G09G3/3291
Abstract: A pixel includes a display element, a driving transistor which controls an amount of a driving current flowing toward the display element, a first capacitor connected to a gate of the driving transistor, a scan transistor which transfers a data voltage to a source of the driving transistor, first and second compensation transistors connected to each other in series between the gate and a drain of the driving transistor, first and second emission control transistors which generates a path of the driving current between the display element and a power line, and a second capacitor connected between a floating node between the first and second compensation transistors and a gate of the second emission control transistor.
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公开(公告)号:US20220398978A1
公开(公告)日:2022-12-15
申请号:US17701935
申请日:2022-03-23
Applicant: SAMSUNG DISPLAY CO., LTD.
Inventor: Keunwoo Kim , Meejae Kang , Dokyeong Lee , Taewook Kang
IPC: G09G3/3233 , G09G3/3266 , G09G3/3291
Abstract: A pixel includes a display element, a driving transistor which controls an amount of a driving current flowing toward the display element, a first capacitor connected to a gate of the driving transistor, a scan transistor which transfers a data voltage to a source of the driving transistor, first and second compensation transistors connected to each other in series between the gate and a drain of the driving transistor, first and second emission control transistors which generates a path of the driving current between the display element and a power line, and a second capacitor connected between a floating node between the first and second compensation transistors and a gate of the second emission control transistor.
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公开(公告)号:US11183650B2
公开(公告)日:2021-11-23
申请号:US16202595
申请日:2018-11-28
Applicant: Samsung Display Co., Ltd.
Inventor: Myounggeun Cha , Sanggun Choi , Meejae Kang , Sanggab Kim , Joon woo Bae , Thanh Tien Nguyen , Kyoungwon Lee , Yongsu Lee
Abstract: A display substrate includes a first conductive layer on a base substrate, a first insulation layer on the first conductive layer, a second conductive layer on the first insulation layer, a second insulation layer on the second conductive layer, and a third conductive layer on the second insulation layer. The third conductive layer is connected to the first conductive layer and the second conductive layer through a contact hole passing through the first insulation layer, the second conductive layer, and the second insulation layer. A sidewall of the contact hole has a stepped shape.
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公开(公告)号:US12101967B2
公开(公告)日:2024-09-24
申请号:US17471849
申请日:2021-09-10
Applicant: Samsung Display Co., Ltd.
Inventor: Keunwoo Kim , Meejae Kang , Thanh Tien Nguyen , Hyena Kwak , Jaehwan Chu
IPC: H10K59/121 , H10K59/124 , H10K59/131
CPC classification number: H10K59/1216 , H10K59/124 , H10K59/131
Abstract: A display device may include a substrate, a first transistor disposed on the substrate and including a first gate electrode, a first conductive pattern disposed on the first gate electrode such that the first conductive pattern and the first gate electrode constitute a first capacitor, a second conductive pattern disposed on the first capacitor, a third conductive pattern disposed on the second conductive pattern such that the third conductive pattern and the second conductive pattern constitute a second capacitor, and a light emitting structure disposed on the second capacitor.
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公开(公告)号:US11727882B2
公开(公告)日:2023-08-15
申请号:US17489399
申请日:2021-09-29
Applicant: Samsung Display Co., Ltd.
Inventor: Hanbit Kim , Meejae Kang , Keunwoo Kim , Doo-Na Kim , Sangsub Kim , Do Kyeong Lee , Jaehwan Chu
IPC: G09G3/3258 , G09G3/3266
CPC classification number: G09G3/3258 , G09G3/3266 , G09G2300/0426
Abstract: A pixel includes: a capacitor connected between a first voltage line and a first node; a light emitting diode including a first electrode connected to a second node, and a second electrode connected to a second voltage line; a first transistor; a second transistor; a third transistor including a first electrode connected to the first node, a second electrode connected to the second node, and a gate electrode to receive a first scan signal; a fourth transistor including a first electrode connected to the first node, a second electrode connected to a third voltage line to receive a third voltage, and a gate electrode to receive a second scan signal; and a compensation transistor including a first electrode connected to the first node, a second electrode connected to a fourth voltage line to receive a compensation voltage, and a gate electrode to receive a compensation control voltage.
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公开(公告)号:US11705057B2
公开(公告)日:2023-07-18
申请号:US17536560
申请日:2021-11-29
Applicant: Samsung Display Co., Ltd.
Inventor: Keunwoo Kim , Meejae Kang , Hanbit Kim , Do Kyeong Lee , Jaehwan Chu
IPC: G09G3/32 , H10K59/121 , H01L27/12 , H01L29/786
CPC classification number: G09G3/32 , H10K59/1213 , H10K59/1216 , G09G2300/0426 , G09G2300/0819 , G09G2300/0842 , G09G2300/0861 , G09G2310/0267 , G09G2310/0275 , G09G2320/0257 , G09G2330/021 , H01L27/1225 , H01L27/1251 , H01L27/1255 , H01L29/7869 , H01L29/78648 , H01L29/78675
Abstract: A pixel includes a light emitting element, a driving switching element and a first compensation switching element and a second compensation switching element. The driving switching element is which applies a driving current to the light emitting element. The first compensation switching element and the second compensation switching element are connected between a control electrode of the driving switching element and an output electrode of the driving switching element. The first compensation switching element and the second compensation switching element are connected to each other in series. The driving switching element is a P-type transistor. The first compensation switching element is an N-type transistor. The second compensation switching element is a P-type transistor.
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