Display device
    1.
    发明授权

    公开(公告)号:US10068930B2

    公开(公告)日:2018-09-04

    申请号:US15430293

    申请日:2017-02-10

    摘要: A display device comprising a first electrode that comprises a first region, a second region, and a third region located between the first region and the second region; a first insulating film disposed on the first electrode; a second electrode that is disposed on the first insulating film and comprises a fourth region overlapping the third region; a second insulating film disposed on the second electrode; a contact hole formed through the second insulating film, the first contact hole exposing the first, second and fourth regions; and a third electrode that is disposed on the second insulating film to cover the first contact hole, and is connected to at least one of the first region and the second region exposed by the first contact hole and the fourth region exposed by the first contact hole.

    Thin film transistor array panel including layered line structure and method for manufacturing the same
    2.
    发明授权
    Thin film transistor array panel including layered line structure and method for manufacturing the same 有权
    薄膜晶体管阵列面板包括分层线结构及其制造方法

    公开(公告)号:US08637869B2

    公开(公告)日:2014-01-28

    申请号:US13669278

    申请日:2012-11-05

    IPC分类号: H01L29/04

    摘要: The present invention provides a thin film transistor array panel comprising an insulating substrate; a gate line formed on the insulating substrate; a gate insulating layer formed on the gate line; a drain electrode and a data line having a source electrode formed on the gate insulating layer, the drain electrode being adjacent to the source electrode with a gap therebetween; and a pixel electrode coupled to the drain electrode, wherein at least one of the gate line, the data line, and the drain electrode comprises a first conductive layer comprising a conductive oxide and a second conductive layer comprising copper (Cu).

    摘要翻译: 本发明提供一种薄膜晶体管阵列板,其包括绝缘基板; 形成在所述绝缘基板上的栅极线; 栅极绝缘层,形成在栅极线上; 漏电极和数据线,其具有形成在所述栅极绝缘层上的源电极,所述漏电极与所述源电极相邻,其间具有间隙; 以及耦合到所述漏电极的像素电极,其中所述栅极线,所述数据线和所述漏电极中的至少一个包括包括导电氧化物的第一导电层和包含铜(Cu)的第二导电层。