公开(公告)号：US20160079286A1

公开(公告)日：2016-03-17

申请号：US14819611

申请日：2015-08-06

Applicant: SAMSUNG DISPLAY CO., LTD.

Inventor： Guanghai JIN ,  Yongjoo KIM ,  Minhyeng LEE

IPC: H01L27/12 ,  H01L29/66 ,  H01L21/283 ,  H01L29/423 ,  H01L21/28 ,  H01L29/786 ,  H01L29/417

CPC classification number: H01L27/1255 ,  H01L21/28026 ,  H01L21/283 ,  H01L27/1222 ,  H01L27/124 ,  H01L27/127 ,  H01L27/1288 ,  H01L29/41733 ,  H01L29/42384 ,  H01L29/4908 ,  H01L29/66545 ,  H01L29/66742 ,  H01L29/78696 ,  H01L2227/323

Abstract: A thin-film transistor (TFT) array substrate including at least one TFT, the at least one TFT including a semiconductor layer including a source region and a drain region having a first doping concentration on a substrate, a channel region between the source and drain regions and having a second doping concentration, the second doping concentration being lower than the first doping concentration, and a non-doping region extending from the source and drain regions; a gate insulating layer on the semiconductor layer; a gate electrode on the gate insulating layer and at least partially overlapping the channel region; and a source electrode and a drain electrode insulated from the gate electrode and electrically connected to the source region and the drain region, respectively.

Abstract translation: 1.一种薄膜晶体管（TFT）阵列基板，包括至少一个TFT，所述至少一个TFT包括半导体层，所述半导体层包括源极区和在衬底上具有第一掺杂浓度的漏极区，所述源极和漏极之间的沟道区 并且具有第二掺杂浓度，所述第二掺杂浓度低于所述第一掺杂浓度，以及从所述源极和漏极区延伸的非掺杂区; 半导体层上的栅极绝缘层; 所述栅电极在所述栅极绝缘层上并且至少部分地与所述沟道区重叠; 以及源极电极和漏极电极，与栅电极绝缘并分别电连接到源极区域和漏极区域。