公开(公告)号：US20150117065A1

公开(公告)日：2015-04-30

申请号：US14288070

申请日：2014-05-27

Applicant: SAMSUNG ELECTRO-MECHANICS CO., LTD.

Inventor： Sang Hyun CHA ,  Deuk Hee PARK ,  Yun Joong LEE ,  Joong Ho CHOI ,  Je Hyeon YU ,  Hyeon Seon YU ,  Chang Seok LEE

IPC: H03K17/06 ,  H02M3/335 ,  H03K17/687

CPC classification number: H03K17/063 ,  H02M3/33507 ,  H03K17/687

Abstract: A gate driving circuit may include: a bias unit receiving an input signal having preset high and low signal levels, including a first N-MOSFET turned on in the case in which the input signal has the high level and a first P-MOSFET turned on in the case in which the input signal has the low level, and supplying bias powers by the turning-on of the first N-MOSFET and the first P-MOSFET; and an amplifying unit including a second N-MOSFET turned on by receiving the bias power supplied from the first N-MOSFET in the case in which the input signal has the high level and a second P-MOSFET turned on by receiving the bias power supplied from the first P-MOSFET turned on in the case in which the input signal has the low level and providing a gate signal depending on the turning-on of the second N-MOSFET and the second P-MOSFET.

Abstract translation: 栅极驱动电路可以包括：偏置单元，其接收具有预置的高和低信号电平的输入信号，包括在输入信号具有高电平的情况下导通的第一N-MOSFET和导通的第一P-MOSFET 在输入信号为低电平的情况下，通过第一N-MOSFET和第一P-MOSFET的导通来提供偏置功率; 以及放大单元，其包括通过在输入信号具有高电平的情况下接收从第一N-MOSFET提供的偏置功率而导通的第二N-MOSFET，并且通过接收提供的偏置功率来接通第二P-MOSFET 在其中输入信号具有低电平并且根据第二N-MOSFET和第二P-MOSFET的导通而提供栅极信号的情况下，第一P-MOSFET导通。