公开(公告)号：US20150179825A1

公开(公告)日：2015-06-25

申请号：US14332958

申请日：2014-07-16

Applicant: SAMSUNG ELECTRO-MECHANICS CO., LTD.

Inventor： Jae Kyu SUNG ,  Chang Su Jang ,  In-Hyuk Song ,  Kyu Hyun Mo ,  Sun Jae Yoon

IPC: H01L29/861 ,  H01L21/265 ,  H01L29/06 ,  H01L29/66 ,  H01L29/36

CPC classification number: H01L29/36 ,  H01L29/402 ,  H01L29/66136 ,  H01L29/8611

Abstract: A diode device may include a first conductivity type first semiconductor region, a second conductivity type second semiconductor region partially formed inside an upper portion of the first semiconductor region, and second conductivity type third semiconductor regions partially formed inside the upper portion of the first semiconductor region, formed on sides of the second semiconductor region, and having an impurity concentration higher than that of the second semiconductor region.

Abstract translation: 二极管器件可以包括第一导电类型的第一半导体区域，部分地形成在第一半导体区域的上部内的第二导电类型的第二半导体区域，以及部分地形成在第一半导体区域的上部内的第二导电类型的第三半导体区域 形成在第二半导体区域的侧面上，其杂质浓度高于第二半导体区域的杂质浓度。