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公开(公告)号：US11430679B2
公开(公告)日：2022-08-30
申请号：US16821415
申请日：2020-03-17
发明人： Kwangnam Kim , Nohsung Kwak , Sungyeon Kim , Hyungjun Kim , Haejoong Park , Jongwoo Sun , Sangrok Oh , Ilyoung Han , Jungpyo Hong
IPC分类号： H01L21/67 , H01L21/687 , H01L21/677 , H01L21/673
摘要： A semiconductor manufacturing apparatus including at least one load module including a load port on which a substrate container is located, a plurality of substrates being mountable on the substrate container; at least one loadlock module including a loadlock chamber directly connected to the substrate container, the loadlock chamber interchangeably having atmospheric pressure and vacuum pressure, a first transfer robot within the loadlock chamber, and a substrate stage within the loadlock chamber, the plurality of substrates being mountable on the substrate stage; a transfer module including a transfer chamber connected to the loadlock chamber, a second transfer robot within the transfer chamber, and a substrate aligner within the transfer chamber; and at least one process module including at least one process chamber connected to the transfer module.
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公开(公告)号：US10861724B2
公开(公告)日：2020-12-08
申请号：US15952317
申请日：2018-04-13
发明人： Jongwoo Sun , Hakyoung Kim , Yun-Kwang Jeon , Wonyoung Jee
IPC分类号： H01L21/67 , H01L21/687 , H01J37/32
摘要： Disclosed are a substrate inspection apparatus and a substrate processing system. The substrate inspection apparatus includes a sensor module and a jig associated with the sensor module to transfer the sensor module. The sensor module may include a housing having a first surface and a second surface facing each other and including an insertion hole connecting the first and second surfaces to each other, a sensor inserted into the insertion hole to measure a state of the substrate, and a tilting member on the housing to adjust tilt of the housing.
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公开(公告)号：US12087554B2
公开(公告)日：2024-09-10
申请号：US16905018
申请日：2020-06-18
发明人： Sungyeon Kim , Jungpyo Hong , Kwangnam Kim , Hyungjun Kim , Jongwoo Sun
CPC分类号： H01J37/32495 , H01J37/3211 , H01J37/32119 , H01J37/3244 , H01J37/32715 , H01J37/32743 , H01L21/67069 , H01J2237/334
摘要： A substrate treating apparatus, including a process chamber having a bottom portion configured to secure a substrate while a substrate treating process is performed on the substrate; and a dielectric window arranged at an upper portion of the process chamber to define a process space, and including: an insulative body, an antenna disposed on an upper surface of the insulative body, a protection layer disposed on a lower surface of the insulative body, and an etch resistor protruding from at least a portion of the protection layer toward the process space, wherein, based on power being applied to the antenna, a plasma is generated in the process space, and wherein the insulative body is protected from the plasma by the protection layer and the etch resistor.
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4.发明申请公开(公告)号：US20220165550A1
公开(公告)日：2022-05-26
申请号：US17397530
申请日：2021-08-09
发明人： Kyoungchon Kim , Taemin Earmme , Kwangnam Kim , Jongwoo Sun
IPC分类号： H01J37/32 , H01L21/683 , H01L21/3065
摘要： A plasma processing apparatus includes a substrate chuck having a first region configured to support a substrate and a second region located at a lower level, a focus ring disposed on the second region and surrounding an outer circumferential surface of the first region, a driving unit disposed below the focus ring, the driving unit including a driving source and a driving shaft in contact with a lower surface of the focus ring and configured to adjust a position of an upper surface of the focus ring by a first distance value, a chromatic confocal sensor disposed below the focus ring and configured to measure a second distance value in which the lower surface of the focus ring is moved by irradiating measurement light to the lower surface of the focus ring, and a control unit calculating an error value between the first distance value and the second distance value.
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公开(公告)号：US10935429B2
公开(公告)日：2021-03-02
申请号：US16536944
申请日：2019-08-09
发明人： Kyeonghun Kim , Jeongil Mun , Hyung Joo Lee , Jongwoo Sun
摘要： A substrate processing module includes a process chamber configured to perform a treatment process on a substrate; a transfer chamber provided on a first side of the process chamber, the substrate being transferred between the process chamber and the transfer chamber; an optical emission spectroscopy (OES) system provided on a second side of the process chamber and configured to monitor the process chamber; and a reference light source disposed in the transfer chamber and configured to emit a reference light to calibrate the OES system.
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公开(公告)号：US20220223385A1
公开(公告)日：2022-07-14
申请号：US17466184
申请日：2021-09-03
发明人： Sejin Oh , Iksu Byun , Taemin Earmme , Jongwoo Sun , Jewoo Han
IPC分类号： H01J37/32 , H01L21/683 , H01L21/311
摘要： A plasma processing apparatus includes: an electrostatic chuck supporting a wafer, and connected to a first power supply, an edge ring disposed to surround an edge of the electrostatic chuck and formed of a material having a first resistivity value, a dielectric ring supporting a lower portion of the edge ring, formed of a material having a second resistivity value lower than that of the first resistivity value, and connected to a second power supply, and an electrode ring disposed in a region overlapping the dielectric ring, in contact with a lower surface of the edge ring, and formed of a material having a third resistivity value greater than the first resistivity value, wherein the third resistivity value is a value of 90 Ωcm to 1000 Ωcm.
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公开(公告)号：US11092495B2
公开(公告)日：2021-08-17
申请号：US16293026
申请日：2019-03-05
发明人： Jeongil Mun , Hyung Joo Lee , Jongwoo Sun
摘要： An optical emission spectroscopy system may include a reference light source, an analyzer to receive and analyze light transmitted from the reference light source, and a calibrator to calibrate light emitted from the reference light source. The calibrator may change a calibration ratio in accordance with an incidence angle of the light.
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公开(公告)号：US20210148760A1
公开(公告)日：2021-05-20
申请号：US17162665
申请日：2021-01-29
发明人： Kyeonghun KIM , Jeongil Mun , Hyung Joo Lee , Jongwoo Sun
摘要： A substrate processing module includes a process chamber configured to perform a treatment process on a substrate; a transfer chamber provided on a first side of the process chamber, the substrate being transferred between the process chamber and the transfer chamber; an optical emission spectroscopy (OES) system provided on a second side of the process chamber and configured to monitor the process chamber; and a reference light source disposed in the transfer chamber and configured to emit a reference light to calibrate the OES system.
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公开(公告)号：US11984304B2
公开(公告)日：2024-05-14
申请号：US17543794
申请日：2021-12-07
发明人： Jongwoo Sun , Kyohyeok Kim , Taehwa Kim , Haejoong Park , Jewoo Han
IPC分类号： H01J37/32
CPC分类号： H01J37/32724 , H01J2237/2001 , H01J2237/334
摘要： An apparatus for plasma etching having an electrostatic chuck including a base layer, a bonding layer, an adsorption layer including a plurality of protrusions on the bonding layer and contacting a lower surface of a substrate, and an edge ring spaced apart from and surrounding a lateral surface of the substrate; a plurality of coolant suppliers injecting a coolant between the plurality of protrusions; a plurality of pipes supplying the coolant to the plurality of coolant suppliers to circulate the coolant in a predetermined direction; a cooling device in which the plasma etching process includes first and second operations, wherein the coolant is injected to cause the electrostatic chuck to reach a first temperature during the first operation, and reach a second temperature during the second operation; and a controller controlling a valve connected to the plurality of pipes to determine a circulation direction of the coolant.
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公开(公告)号：US11862440B2
公开(公告)日：2024-01-02
申请号：US17373214
申请日：2021-07-12
发明人： Jeongil Mun , Jinyoung Park , Jongwoo Sun , Hyungjoo Lee
IPC分类号： H01J37/32 , H01L21/683
CPC分类号： H01J37/32715 , H01J37/32541 , H01J37/32568 , H01L21/6833 , H01J37/32697
摘要： Semiconductor processing equipment and an electrostatic chuck include a semiconductor having: an upper electrode; a gas supplier connected to the upper electrode; and a substrate supporting structure spaced apart from the upper electrode to define a processing volume. The substrate supporting structure supports a substrate and includes: a lower electrode having a side area disposed outside a step formed at an outer perimeter portion of the lower electrode and a processing area disposed inside the step; a first plate disposed on the lower electrode; an attraction electrode disposed on the first plate; and a second plate disposed on the attraction plate. The second plate supports the substrate in a state in which the substrate is laid on an upper surface of the second plate. Each of the first plate and the second plate includes ceramic. The lower electrode has a maximum height at a central portion of the processing area.
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