公开(公告)号：US20220091171A1

公开(公告)日：2022-03-24

申请号：US17342241

申请日：2021-06-08

Applicant: Samsung Electronics Co., Ltd.

Inventor： Bonggyu Kang ,  Youngsoo Jang ,  Heesu Kim

IPC: G01R31/00 ,  G01R3/00 ,  G01R23/163 ,  G01R31/28

Abstract: In a method of manufacturing an integrated circuit involving performing an electrostatic discharge (ESD) test, a weak frequency band is detected by sequentially radiating a plurality of first electromagnetic waves on a first test board including the integrated circuit. First peak-to-peak voltage signals are detected by sequentially radiating the plurality of first electromagnetic waves on a second test board including an electromagnetic wave receiving module. A frequency spectrum is detected by radiating a second electromagnetic wave on a housing including a third test board including the electromagnetic wave receiving module. A second peak-to-peak voltage signal is generated based on the weak frequency band, the first peak-to-peak voltage signals and the frequency spectrum. An ESD characteristic associated with an electronic system including the integrated circuit is predicted based on the second peak-to-peak voltage signal.

公开(公告)号：US12283576B2

公开(公告)日：2025-04-22

申请号：US17713309

申请日：2022-04-05

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Yongha Kim ,  Bonggyu Kang ,  Youngsoo Jang

IPC: H01L25/10

Abstract: An electronic device includes a substrate, a first plate having a first internal surface facing a first surface of the substrate, and at least one first through-hole and at least one second through-hole, first and second semiconductor packages spaced apart from each other between the first surface and the first internal surface, a first thermal interface material layer contacting an upper surface of the first semiconductor package and the first internal surface, and filling at least a portion of the at least one first through-hole, and a second thermal interface material layer contacting an upper surface of the second semiconductor package and the first internal surface, and filling at least a portion of the at least one second through-hole. At least one of side surfaces of the first and second thermal interface material layers is exposed to an empty space between the first internal surface and the first surface.

公开(公告)号：US11982707B2

公开(公告)日：2024-05-14

申请号：US17873385

申请日：2022-07-26

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Junsik Park ,  Heesu Kim ,  Bonggyu Kang ,  Youngmin Ku ,  Namsu Kim

IPC: G01R31/28 ,  G01R27/26 ,  H05K1/18

CPC classification number: G01R31/2884 ,  G01R27/2611 ,  G01R31/2879 ,  H05K1/181 ,  H05K2201/1003

Abstract: A semiconductor device includes an internal circuit connected to at least one pad. A first inductor element is connected between the at least one pad and the internal circuit, a second inductor element coupled to the first inductor element and generating an induced voltage due to an overcurrent flowing in the first inductor element. An event detection circuit includes a monitoring element connected to the second inductor element. The monitoring element is configured to generate an event detection signal by sensing changes in properties of the monitoring element caused by at least one of the induced voltages generated in the second inductor element and a current flowing in the second inductor element. The internal circuit supplies an operating voltage to the event detection circuit, and determines whether an event causing the overcurrent has occurred by receiving the event detection signal from the event detection circuit.

公开(公告)号：US11650237B2

公开(公告)日：2023-05-16

申请号：US17342241

申请日：2021-06-08

Applicant: Samsung Electronics Co., Ltd.

Inventor： Bonggyu Kang ,  Youngsoo Jang ,  Heesu Kim

IPC: G01R31/00 ,  G01R3/00 ,  G01R23/163 ,  G01R31/28

CPC classification number: G01R31/002 ,  G01R3/00 ,  G01R23/163 ,  G01R31/2841

Abstract: In a method of manufacturing an integrated circuit involving performing an electrostatic discharge (ESD) test, a weak frequency band is detected by sequentially radiating a plurality of first electromagnetic waves on a first test board including the integrated circuit. First peak-to-peak voltage signals are detected by sequentially radiating the plurality of first electromagnetic waves on a second test board including an electromagnetic wave receiving module. A frequency spectrum is detected by radiating a second electromagnetic wave on a housing including a third test board including the electromagnetic wave receiving module. A second peak-to-peak voltage signal is generated based on the weak frequency band, the first peak-to-peak voltage signals and the frequency spectrum. An ESD characteristic associated with an electronic system including the integrated circuit is predicted based on the second peak-to-peak voltage signal.

公开(公告)号：US20230133288A1

公开(公告)日：2023-05-04

申请号：US17873385

申请日：2022-07-26

Applicant: SAMSUNG ELECTRONICS CO.,LTD.

Inventor： Junsik PARK ,  Heesu Kim ,  Bonggyu Kang ,  Youngmin Ku ,  Namsu Kim

IPC: G01R31/28 ,  G01R27/26 ,  H05K1/18

Abstract: A semiconductor device includes an internal circuit connected to at least one pad. A first inductor element is connected between the at least one pad and the internal circuit, a second inductor element coupled to the first inductor element and generating an induced voltage due to an overcurrent flowing in the first inductor element. An event detection circuit includes a monitoring element connected to the second inductor element. The monitoring element is configured to generate an event detection signal by sensing changes in properties of the monitoring element caused by at least one of the induced voltages generated in the second inductor element and a current flowing in the second inductor element. The internal circuit supplies an operating voltage to the event detection circuit, and determines whether an event causing the overcurrent has occurred by receiving the event detection signal from the event detection circuit.