METHOD OF MANUFACTURING AN INTEGRATED CIRCUIT INVOLVING PERFORMING AN ELECTROSTATIC DISCHARGE TEST AND ELECTROSTATIC DISCHARGE TEST SYSTEM PERFORMING THE SAME

    公开(公告)号:US20220091171A1

    公开(公告)日:2022-03-24

    申请号:US17342241

    申请日:2021-06-08

    Abstract: In a method of manufacturing an integrated circuit involving performing an electrostatic discharge (ESD) test, a weak frequency band is detected by sequentially radiating a plurality of first electromagnetic waves on a first test board including the integrated circuit. First peak-to-peak voltage signals are detected by sequentially radiating the plurality of first electromagnetic waves on a second test board including an electromagnetic wave receiving module. A frequency spectrum is detected by radiating a second electromagnetic wave on a housing including a third test board including the electromagnetic wave receiving module. A second peak-to-peak voltage signal is generated based on the weak frequency band, the first peak-to-peak voltage signals and the frequency spectrum. An ESD characteristic associated with an electronic system including the integrated circuit is predicted based on the second peak-to-peak voltage signal.

    Semiconductor device
    2.
    发明授权

    公开(公告)号:US11982707B2

    公开(公告)日:2024-05-14

    申请号:US17873385

    申请日:2022-07-26

    Abstract: A semiconductor device includes an internal circuit connected to at least one pad. A first inductor element is connected between the at least one pad and the internal circuit, a second inductor element coupled to the first inductor element and generating an induced voltage due to an overcurrent flowing in the first inductor element. An event detection circuit includes a monitoring element connected to the second inductor element. The monitoring element is configured to generate an event detection signal by sensing changes in properties of the monitoring element caused by at least one of the induced voltages generated in the second inductor element and a current flowing in the second inductor element. The internal circuit supplies an operating voltage to the event detection circuit, and determines whether an event causing the overcurrent has occurred by receiving the event detection signal from the event detection circuit.

    SEMICONDUCTOR DEVICE
    4.
    发明申请

    公开(公告)号:US20230133288A1

    公开(公告)日:2023-05-04

    申请号:US17873385

    申请日:2022-07-26

    Abstract: A semiconductor device includes an internal circuit connected to at least one pad. A first inductor element is connected between the at least one pad and the internal circuit, a second inductor element coupled to the first inductor element and generating an induced voltage due to an overcurrent flowing in the first inductor element. An event detection circuit includes a monitoring element connected to the second inductor element. The monitoring element is configured to generate an event detection signal by sensing changes in properties of the monitoring element caused by at least one of the induced voltages generated in the second inductor element and a current flowing in the second inductor element. The internal circuit supplies an operating voltage to the event detection circuit, and determines whether an event causing the overcurrent has occurred by receiving the event detection signal from the event detection circuit.

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