公开(公告)号：US20240038873A1

公开(公告)日：2024-02-01

申请号：US18483413

申请日：2023-10-09

申请人： SAMSUNG ELECTRONICS CO., LTD.

发明人： Bongseok Suh ,  Daewon Kim ,  Beomjin Park ,  Sukhyung Park ,  Sungil Park ,  Jaehoon Shin ,  Bongseob Yang ,  Junggun You ,  Jaeyun Lee

IPC分类号： H01L29/66 ,  H01L29/10 ,  H01L29/423 ,  H01L29/786

CPC分类号： H01L29/6656 ,  H01L29/1033 ,  H01L29/42376 ,  H01L29/78696 ,  H01L29/66553 ,  H01L29/7727

摘要： A semiconductor device includes a first active region defined on a substrate, a first gate electrode across the first active region, a first drain region in the first active region at a position adjacent to the first gate electrode, an undercut region between the first active region and the first gate electrode, and a first gate spacer on a side surface of the first gate electrode and extending into the undercut region.

公开(公告)号：US11810964B2

公开(公告)日：2023-11-07

申请号：US17060193

申请日：2020-10-01

申请人： SAMSUNG ELECTRONICS CO., LTD.

发明人： Bongseok Suh ,  Daewon Kim ,  Beomjin Park ,  Sukhyung Park ,  Sungil Park ,  Jaehoon Shin ,  Bongseob Yang ,  Junggun You ,  Jaeyun Lee

IPC分类号： H01L29/66 ,  H01L29/10 ,  H01L29/423 ,  H01L29/786 ,  H01L29/772 ,  H01L21/28 ,  H01L21/8234

CPC分类号： H01L29/6656 ,  H01L29/1033 ,  H01L29/42376 ,  H01L29/66553 ,  H01L29/78696 ,  H01L21/28141 ,  H01L21/823468 ,  H01L29/1037 ,  H01L29/66719 ,  H01L29/7727

摘要： A semiconductor device includes a first active region defined on a substrate, a first gate electrode across the first active region, a first drain region in the first active region at a position adjacent to the first gate electrode, an undercut region between the first active region and the first gate electrode, and a first gate spacer on a side surface of the first gate electrode and extending into the undercut region.