公开(公告)号：US20220068659A1

公开(公告)日：2022-03-03

申请号：US17184279

申请日：2021-02-24

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： CHANYEONG JEONG ,  HOSEOP CHOI ,  SUNGGIL KANG ,  DONGKYU SHIN ,  SANGJIN AN

IPC: H01L21/324 ,  H01L21/67 ,  H01L21/311 ,  H01J37/32

Abstract: A wafer processing method includes supplying a first process gas into a wafer processing apparatus, lowering a temperature of the wafer, generating plasma using the first process gas, supplying a second process gas and mixing the second process gas with the plasma, performing a plasma process on the wafer using the plasma and the second process gas, and performing an annealing process on the wafer on which the plasma process has been performed. The lowering of the temperature of the wafer includes increasing an internal pressure of the wafer processing apparatus.