公开(公告)号：US20210057193A1

公开(公告)日：2021-02-25

申请号：US17091433

申请日：2020-11-06

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： SANG KI NAM ,  SUNGGIL KANG ,  SUNGYONG LIM ,  BEOMJIN YOO ,  AKIRA KOSHIISHI ,  VASILY PASHKOVSKIY ,  KWANGYOUB HEO

IPC: H01J37/32 ,  H01J1/02

Abstract: A hollow cathode includes an insulation plate having cathode holes. Bottom electrodes are below the insulation plate. The bottom electrodes define first holes having a width greater than a width of the cathode holes. Top electrodes are at an opposite side of the insulation plate from the bottom electrodes. The top electrodes define second holes aligned with the first holes along a direction orthogonal to the upper surface of the insulation plate.

公开(公告)号：US20220068659A1

公开(公告)日：2022-03-03

申请号：US17184279

申请日：2021-02-24

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： CHANYEONG JEONG ,  HOSEOP CHOI ,  SUNGGIL KANG ,  DONGKYU SHIN ,  SANGJIN AN

IPC: H01L21/324 ,  H01L21/67 ,  H01L21/311 ,  H01J37/32

Abstract: A wafer processing method includes supplying a first process gas into a wafer processing apparatus, lowering a temperature of the wafer, generating plasma using the first process gas, supplying a second process gas and mixing the second process gas with the plasma, performing a plasma process on the wafer using the plasma and the second process gas, and performing an annealing process on the wafer on which the plasma process has been performed. The lowering of the temperature of the wafer includes increasing an internal pressure of the wafer processing apparatus.