公开(公告)号：US12089397B2

公开(公告)日：2024-09-10

申请号：US18318752

申请日：2023-05-17

Applicant: Samsung Electronics Co., Ltd.

Inventor： Chang Mu An ,  Sang Yeol Kang ,  Young-Lim Park ,  Jong-Bom Seo ,  Se Hyoung Ahn

IPC: H01L29/76 ,  H01L29/94 ,  H10B12/00

CPC classification number: H10B12/37

Abstract: Semiconductor device may include a landing pad and a lower electrode that is on and is connected to the landing pad and includes an outer portion and an inner portion inside the outer portion. The outer portion includes first and second regions. The semiconductor devices may also include a dielectric film on the first region of the outer portion on the lower electrode and an upper electrode on the dielectric film. The first region of the outer portion of the lower electrode may include a silicon (Si) dopant, the dielectric film does not extend along the second region of the outer portion. A concentration of the silicon dopant in the first region of the outer portion is different from a concentration of the silicon dopant in the second region of the outer portion and is higher than a concentration of the silicon dopant in the inner portion.

公开(公告)号：US11488958B2

公开(公告)日：2022-11-01

申请号：US16916751

申请日：2020-06-30

Applicant: Samsung Electronics Co., Ltd.

Inventor： Chang Mu An ,  Sang Yeol Kang ,  Young-Lim Park ,  Jong-Bom Seo ,  Se Hyoung Ahn

IPC: H01L25/065 ,  H01L25/00 ,  H01L21/768 ,  H01L23/00 ,  H01L23/31 ,  H01L27/108

Abstract: A semiconductor device includes a landing pad on a substrate, a lower electrode on the landing pad, the lower electrode being electrically connected to the landing pad, a dielectric layer on the lower electrode, the dielectric layer extending along a profile of the lower electrode, an upper electrode on the dielectric layer, and an upper plate electrode on the upper electrode and including first fluorine (F) therein, wherein the upper plate electrode includes an interface facing the upper electrode, and wherein the upper plate electrode includes a portion in which a concentration of the first fluorine decreases as a distance from the interface of the upper plate electrode increases.

公开(公告)号：US20210125993A1

公开(公告)日：2021-04-29

申请号：US16916751

申请日：2020-06-30

Applicant: Samsung Electronics Co., Ltd.

Inventor： Chang Mu An ,  Sang Yeol Kang ,  Young-Lim Park ,  Jong-Bom Seo ,  Se Hyoung Ahn

IPC: H01L27/108

Abstract: A semiconductor device includes a landing pad on a substrate, a lower electrode on the landing pad, the lower electrode being electrically connected to the landing pad, a dielectric layer on the lower electrode, the dielectric layer extending along a profile of the lower electrode, an upper electrode on the dielectric layer, and an upper plate electrode on the upper electrode and including first fluorine (F) therein, wherein the upper plate electrode includes an interface facing the upper electrode, and wherein the upper plate electrode includes a portion in which a concentration of the first fluorine decreases as a distance from the interface of the upper plate electrode increases.

公开(公告)号：US11527604B2

公开(公告)日：2022-12-13

申请号：US17342610

申请日：2021-06-09

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Young-Lim Park ,  Se Hyoung Ahn ,  Sang Yeol Kang ,  Chang Mu An ,  Kyoo Ho Jung

IPC: H01L27/11507 ,  H01L27/108 ,  H01L49/02

Abstract: A semiconductor device includes a landing pad on a substrate, a lower electrode on the landing pad and connected to the landing pad, the lower electrode including an outer portion, the outer portion including first and second regions, and an inner portion inside the outer portion, a dielectric film on the lower electrode to extend along the first region of the outer portion, and an upper electrode on the dielectric film, wherein the outer portion of the lower electrode includes a metal dopant, a concentration of the metal dopant in the first region of the outer portion being different from a concentration of the metal dopant in the second region of the outer portion.

公开(公告)号：US20160043163A1

公开(公告)日：2016-02-11

申请号：US14682518

申请日：2015-04-09

Applicant: Samsung Electronics Co., Ltd.

Inventor： Jong Bom Seo ,  Young Geun Park ,  Bong Hyun Kim ,  Sun Ho Kim ,  Hyun Jun Kim ,  Se Hyoung Ahn ,  Chang Mu An

IPC: H01L49/02

CPC classification number: H01L28/90 ,  B05D1/60 ,  H01L27/10814 ,  H01L27/10852

Abstract: A method of manufacturing a capacitor for a semiconductor device includes forming a lower electrode, forming a dielectric layer on the lower electrode, forming a first upper electrode on the dielectric layer, adsorbing an organic silicon source onto a surface of the first upper electrode, and forming a second upper electrode on the first upper electrode onto which the organic silicon source is adsorbed. Related devices and fabrication methods are also discussed.

Abstract translation: 制造半导体装置的电容器的方法包括：形成下电极，在所述下电极上形成电介质层，在所述电介质层上形成第一上电极，将有机硅源吸附在所述第一上电极的表面上，以及 在其上吸附有机硅源的第一上电极上形成第二上电极。 还讨论了相关设备和制造方法。

公开(公告)号：US11711915B2

公开(公告)日：2023-07-25

申请号：US17570477

申请日：2022-01-07

Applicant: Samsung Electronics Co., Ltd.

Inventor： Chang Mu An ,  Sang Yeol Kang ,  Young-Lim Park ,  Jong-Bom Seo ,  Se Hyoung Ahn

IPC: H01L29/76 ,  H01L29/94 ,  H10B12/00

CPC classification number: H10B12/37

Abstract: Semiconductor device may include a landing pad and a lower electrode that is on and is connected to the landing pad and includes an outer portion and an inner portion inside the outer portion. The outer portion includes first and second regions. The semiconductor devices may also include a dielectric film on the first region of the outer portion on the lower electrode and an upper electrode on the dielectric film. The first region of the outer portion of the lower electrode may include a silicon (Si) dopant, the dielectric film does not extend along the second region of the outer portion. A concentration of the silicon dopant in the first region of the outer portion is different from a concentration of the silicon dopant in the second region of the outer portion and is higher than a concentration of the silicon dopant in the inner portion.

公开(公告)号：US11244946B2

公开(公告)日：2022-02-08

申请号：US16946487

申请日：2020-06-24

Applicant: Samsung Electronics Co., Ltd.

Inventor： Chang Mu An ,  Sang Yeol Kang ,  Young-Lim Park ,  Jong-Bom Seo ,  Se Hyoung Ahn

IPC: H01L29/76 ,  H01L27/108 ,  H01L29/94

Abstract: Semiconductor device may include a landing pad and a lower electrode that is on and is connected to the landing pad and includes an outer portion and an inner portion inside the outer portion. The outer portion includes first and second regions. The semiconductor devices may also include a dielectric film on the first region of the outer portion on the lower electrode and an upper electrode on the dielectric film. The first region of the outer portion of the lower electrode may include a silicon (Si) dopant, the dielectric film does not extend along the second region of the outer portion. A concentration of the silicon dopant in the first region of the outer portion is different from a concentration of the silicon dopant in the second region of the outer portion and is higher than a concentration of the silicon dopant in the inner portion.

公开(公告)号：US11069768B2

公开(公告)日：2021-07-20

申请号：US16781151

申请日：2020-02-04

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Young-Lim Park ,  Se Hyoung Ahn ,  Sang Yeol Kang ,  Chang Mu An ,  Kyoo Ho Jung

IPC: H01L27/11507 ,  H01L27/108 ,  H01L49/02

Abstract: A semiconductor device includes a landing pad on a substrate, a lower electrode on the landing pad and connected to the landing pad, the lower electrode including an outer portion, the outer portion including first and second regions, and an inner portion inside the outer portion, a dielectric film on the lower electrode to extend along the first region of the outer portion, and an upper electrode on the dielectric film, wherein the outer portion of the lower electrode includes a metal dopant, a concentration of the metal dopant in the first region of the outer portion being different from a concentration of the metal dopant in the second region of the outer portion.

公开(公告)号：US09496328B2

公开(公告)日：2016-11-15

申请号：US14682518

申请日：2015-04-09

Applicant: Samsung Electronics Co., Ltd.

Inventor： Jong Bom Seo ,  Young Geun Park ,  Bong Hyun Kim ,  Sun Ho Kim ,  Hyun Jun Kim ,  Se Hyoung Ahn ,  Chang Mu An

IPC: H01L27/108 ,  H01L49/02 ,  B05D1/00

CPC classification number: H01L28/90 ,  B05D1/60 ,  H01L27/10814 ,  H01L27/10852

Abstract: A method of manufacturing a capacitor for a semiconductor device includes forming a lower electrode, forming a dielectric layer on the lower electrode, forming a first upper electrode on the dielectric layer, adsorbing an organic silicon source onto a surface of the first upper electrode, and forming a second upper electrode on the first upper electrode onto which the organic silicon source is adsorbed. Related devices and fabrication methods are also discussed.

Abstract translation: 制造半导体装置的电容器的方法包括：形成下电极，在所述下电极上形成电介质层，在所述电介质层上形成第一上电极，将有机硅源吸附在所述第一上电极的表面上，以及 在其上吸附有机硅源的第一上电极上形成第二上电极。 还讨论了相关设备和制造方法。