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公开(公告)号：US12089397B2
公开(公告)日：2024-09-10
申请号：US18318752
申请日：2023-05-17
发明人： Chang Mu An , Sang Yeol Kang , Young-Lim Park , Jong-Bom Seo , Se Hyoung Ahn
CPC分类号： H10B12/37
摘要： Semiconductor device may include a landing pad and a lower electrode that is on and is connected to the landing pad and includes an outer portion and an inner portion inside the outer portion. The outer portion includes first and second regions. The semiconductor devices may also include a dielectric film on the first region of the outer portion on the lower electrode and an upper electrode on the dielectric film. The first region of the outer portion of the lower electrode may include a silicon (Si) dopant, the dielectric film does not extend along the second region of the outer portion. A concentration of the silicon dopant in the first region of the outer portion is different from a concentration of the silicon dopant in the second region of the outer portion and is higher than a concentration of the silicon dopant in the inner portion.
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公开(公告)号：US11527604B2
公开(公告)日：2022-12-13
申请号：US17342610
申请日：2021-06-09
发明人： Young-Lim Park , Se Hyoung Ahn , Sang Yeol Kang , Chang Mu An , Kyoo Ho Jung
IPC分类号： H01L27/11507 , H01L27/108 , H01L49/02
摘要： A semiconductor device includes a landing pad on a substrate, a lower electrode on the landing pad and connected to the landing pad, the lower electrode including an outer portion, the outer portion including first and second regions, and an inner portion inside the outer portion, a dielectric film on the lower electrode to extend along the first region of the outer portion, and an upper electrode on the dielectric film, wherein the outer portion of the lower electrode includes a metal dopant, a concentration of the metal dopant in the first region of the outer portion being different from a concentration of the metal dopant in the second region of the outer portion.
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公开(公告)号：US20160043163A1
公开(公告)日：2016-02-11
申请号：US14682518
申请日：2015-04-09
发明人： Jong Bom Seo , Young Geun Park , Bong Hyun Kim , Sun Ho Kim , Hyun Jun Kim , Se Hyoung Ahn , Chang Mu An
IPC分类号： H01L49/02
CPC分类号： H01L28/90 , B05D1/60 , H01L27/10814 , H01L27/10852
摘要： A method of manufacturing a capacitor for a semiconductor device includes forming a lower electrode, forming a dielectric layer on the lower electrode, forming a first upper electrode on the dielectric layer, adsorbing an organic silicon source onto a surface of the first upper electrode, and forming a second upper electrode on the first upper electrode onto which the organic silicon source is adsorbed. Related devices and fabrication methods are also discussed.
摘要翻译： 制造半导体装置的电容器的方法包括：形成下电极，在所述下电极上形成电介质层，在所述电介质层上形成第一上电极，将有机硅源吸附在所述第一上电极的表面上，以及 在其上吸附有机硅源的第一上电极上形成第二上电极。 还讨论了相关设备和制造方法。
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公开(公告)号：US11600621B2
公开(公告)日：2023-03-07
申请号：US17412801
申请日：2021-08-26
发明人： Kyooho Jung , Younsoo Kim , Young-lim Park , Jeong-Gyu Song , Se Hyoung Ahn , Changmu An
IPC分类号： H01L27/108 , H01L49/02 , H01L21/02
摘要： Disclosed are semiconductor memory devices and methods of fabricating the same. The semiconductor memory device comprises a capacitor that includes a bottom electrode, a top electrode opposite to the bottom electrode across a dielectric layer, and an interface layer between the bottom electrode and the dielectric layer. The interface layer includes a combination of niobium (Nb), titanium (Ti), oxygen (O), and nitrogen (N), and further includes a constituent of the dielectric layer.
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公开(公告)号：US11488958B2
公开(公告)日：2022-11-01
申请号：US16916751
申请日：2020-06-30
发明人： Chang Mu An , Sang Yeol Kang , Young-Lim Park , Jong-Bom Seo , Se Hyoung Ahn
IPC分类号： H01L25/065 , H01L25/00 , H01L21/768 , H01L23/00 , H01L23/31 , H01L27/108
摘要： A semiconductor device includes a landing pad on a substrate, a lower electrode on the landing pad, the lower electrode being electrically connected to the landing pad, a dielectric layer on the lower electrode, the dielectric layer extending along a profile of the lower electrode, an upper electrode on the dielectric layer, and an upper plate electrode on the upper electrode and including first fluorine (F) therein, wherein the upper plate electrode includes an interface facing the upper electrode, and wherein the upper plate electrode includes a portion in which a concentration of the first fluorine decreases as a distance from the interface of the upper plate electrode increases.
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公开(公告)号：US11133314B2
公开(公告)日：2021-09-28
申请号：US16897589
申请日：2020-06-10
发明人： Kyooho Jung , Younsoo Kim , Young-lim Park , Jeong-Gyu Song , Se Hyoung Ahn , Changmu An
IPC分类号： H01L27/108 , H01L49/02 , H01L21/02
摘要： Disclosed are semiconductor memory devices and methods of fabricating the same. The semiconductor memory device comprises a capacitor that includes a bottom electrode, a top electrode opposite to the bottom electrode across a dielectric layer, and an interface layer between the bottom electrode and the dielectric layer. The interface layer includes a combination of niobium (Nb), titanium (Ti), oxygen (O), and nitrogen (N), and further includes a constituent of the dielectric layer.
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公开(公告)号：US20210125993A1
公开(公告)日：2021-04-29
申请号：US16916751
申请日：2020-06-30
发明人： Chang Mu An , Sang Yeol Kang , Young-Lim Park , Jong-Bom Seo , Se Hyoung Ahn
IPC分类号： H01L27/108
摘要： A semiconductor device includes a landing pad on a substrate, a lower electrode on the landing pad, the lower electrode being electrically connected to the landing pad, a dielectric layer on the lower electrode, the dielectric layer extending along a profile of the lower electrode, an upper electrode on the dielectric layer, and an upper plate electrode on the upper electrode and including first fluorine (F) therein, wherein the upper plate electrode includes an interface facing the upper electrode, and wherein the upper plate electrode includes a portion in which a concentration of the first fluorine decreases as a distance from the interface of the upper plate electrode increases.
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公开(公告)号：US11711915B2
公开(公告)日：2023-07-25
申请号：US17570477
申请日：2022-01-07
发明人： Chang Mu An , Sang Yeol Kang , Young-Lim Park , Jong-Bom Seo , Se Hyoung Ahn
CPC分类号： H10B12/37
摘要： Semiconductor device may include a landing pad and a lower electrode that is on and is connected to the landing pad and includes an outer portion and an inner portion inside the outer portion. The outer portion includes first and second regions. The semiconductor devices may also include a dielectric film on the first region of the outer portion on the lower electrode and an upper electrode on the dielectric film. The first region of the outer portion of the lower electrode may include a silicon (Si) dopant, the dielectric film does not extend along the second region of the outer portion. A concentration of the silicon dopant in the first region of the outer portion is different from a concentration of the silicon dopant in the second region of the outer portion and is higher than a concentration of the silicon dopant in the inner portion.
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公开(公告)号：US11244946B2
公开(公告)日：2022-02-08
申请号：US16946487
申请日：2020-06-24
发明人： Chang Mu An , Sang Yeol Kang , Young-Lim Park , Jong-Bom Seo , Se Hyoung Ahn
IPC分类号： H01L29/76 , H01L27/108 , H01L29/94
摘要： Semiconductor device may include a landing pad and a lower electrode that is on and is connected to the landing pad and includes an outer portion and an inner portion inside the outer portion. The outer portion includes first and second regions. The semiconductor devices may also include a dielectric film on the first region of the outer portion on the lower electrode and an upper electrode on the dielectric film. The first region of the outer portion of the lower electrode may include a silicon (Si) dopant, the dielectric film does not extend along the second region of the outer portion. A concentration of the silicon dopant in the first region of the outer portion is different from a concentration of the silicon dopant in the second region of the outer portion and is higher than a concentration of the silicon dopant in the inner portion.
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公开(公告)号：US11069768B2
公开(公告)日：2021-07-20
申请号：US16781151
申请日：2020-02-04
发明人： Young-Lim Park , Se Hyoung Ahn , Sang Yeol Kang , Chang Mu An , Kyoo Ho Jung
IPC分类号： H01L27/11507 , H01L27/108 , H01L49/02
摘要： A semiconductor device includes a landing pad on a substrate, a lower electrode on the landing pad and connected to the landing pad, the lower electrode including an outer portion, the outer portion including first and second regions, and an inner portion inside the outer portion, a dielectric film on the lower electrode to extend along the first region of the outer portion, and an upper electrode on the dielectric film, wherein the outer portion of the lower electrode includes a metal dopant, a concentration of the metal dopant in the first region of the outer portion being different from a concentration of the metal dopant in the second region of the outer portion.
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