公开(公告)号：US09825033B2

公开(公告)日：2017-11-21

申请号：US15196400

申请日：2016-06-29

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Oh-Kyum Kwon ,  Myoung-Kyu Park ,  Chul-Ho Chung

IPC: H01L21/70 ,  H01L27/092 ,  H01L29/161 ,  H01L29/10 ,  H01L29/78 ,  H01L29/08 ,  H01L29/423 ,  H01L21/02 ,  H01L21/8238 ,  H01L21/8256

CPC classification number: H01L27/0922 ,  H01L21/02532 ,  H01L21/823807 ,  H01L21/823814 ,  H01L21/823857 ,  H01L21/823892 ,  H01L21/8256 ,  H01L29/0847 ,  H01L29/1054 ,  H01L29/1079 ,  H01L29/161 ,  H01L29/42364 ,  H01L29/66651 ,  H01L29/7833

Abstract: An integrated circuit device includes a substrate including a first region and a second region, a first transistor in the first region, the first transistor being an N-type transistor and including a first silicon-germanium layer on the substrate, and a first gate electrode on the first silicon-germanium layer, and a second transistor in the second region and including a second gate electrode, the second transistor not having a silicon-germanium layer between the substrate and the second gate electrode.

公开(公告)号：US08847355B2

公开(公告)日：2014-09-30

申请号：US13803251

申请日：2013-03-14

Applicant: Samsung Electronics Co., Ltd.

Inventor： Chul-Ho Chung

IPC: H01L29/92 ,  H01L49/02 ,  H01L27/108

CPC classification number: H01L28/40 ,  H01L23/5223 ,  H01L27/0805 ,  H01L27/108 ,  H01L28/90 ,  H01L2924/0002 ,  H01L2924/00

Abstract: A capacitor structure comprises a substrate extending in a horizontal direction of extension. A first gate insulating film is on the substrate and a first gate pattern is on the first gate insulating film. A first finger-shaped electrode is on the first gate pattern, and a second finger-shaped electrode is on the first gate pattern and alternately disposed with the first electrode to be spaced apart from the first electrode in the horizontal direction. The first electrode is connected to the first gate pattern, and the second electrode and the first gate pattern are insulated from each other.

Abstract translation: 电容器结构包括沿水平延伸方向延伸的衬底。 第一栅极绝缘膜位于衬底上，第一栅极图案位于第一栅极绝缘膜上。 第一指状电极位于第一栅极图案上，第二指状电极位于第一栅极图案上，并且与第一电极交替设置，以与水平方向上的第一电极间隔开。 第一电极连接到第一栅极图案，并且第二电极和第一栅极图案彼此绝缘。

公开(公告)号：US20140225225A1

公开(公告)日：2014-08-14

申请号：US13803251

申请日：2013-03-14

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Chul-Ho Chung

IPC: H01L49/02

CPC classification number: H01L28/40 ,  H01L23/5223 ,  H01L27/0805 ,  H01L27/108 ,  H01L28/90 ,  H01L2924/0002 ,  H01L2924/00

Abstract: A capacitor structure comprises a substrate extending in a horizontal direction of extension. A first gate insulating film is on the substrate and a first gate pattern is on the first gate insulating film. A first finger-shaped electrode is on the first gate pattern, and a second finger-shaped electrode is on the first gate pattern and alternately disposed with the first electrode to be spaced apart from the first electrode in the horizontal direction. The first electrode is connected to the first gate pattern, and the second electrode and the first gate pattern are insulated from each other.

Abstract translation: 电容器结构包括沿水平延伸方向延伸的衬底。 第一栅极绝缘膜位于衬底上，第一栅极图案位于第一栅极绝缘膜上。 第一指状电极位于第一栅极图案上，第二指状电极位于第一栅极图案上，并且与第一电极交替设置，以与水平方向上的第一电极间隔开。 第一电极连接到第一栅极图案，并且第二电极和第一栅极图案彼此绝缘。