SEMICONDUCTOR DEVICE
    2.
    发明申请

    公开(公告)号:US20220375963A1

    公开(公告)日:2022-11-24

    申请号:US17680907

    申请日:2022-02-25

    Abstract: A semiconductor device includes first, second, and third power rails extending in a first direction on a substrate and sequentially spaced apart in a second direction intersecting the first direction. A fourth power rail extends in the first direction on the substrate between the first and third power rails. A first well of a first conductive type is displaced inside the substrate between the first and third power rails. Cells are continuously displaced between the first and third power rails and share the first well. The first and third power rails are provided with a first voltage, the second power rail is provided with a second voltage different from the first voltage, the fourth power rail is provided with a third voltage different from the first voltage and the second voltage, and the cells are provided with the third voltage from the fourth power rail.

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