公开(公告)号：US20180301178A1

公开(公告)日：2018-10-18

申请号：US15816810

申请日：2017-11-17

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： DAE-SHIK KIM ,  SUK-SOO PYO ,  GWAN-HYEOB KOH

IPC: G11C11/16 ,  H01L27/22

CPC classification number: G11C11/1673 ,  G11C7/04 ,  G11C11/161 ,  G11C11/1697 ,  H01L27/228 ,  H01L43/08 ,  H01L43/10

Abstract: A memory device includes at least one reference cell and multiple memory cells. A method of operating the memory device may include detecting a temperature of the memory device and controlling a level of a first read signal applied to the at least one reference cell in accordance with a result of the detecting of the temperature. The method may also include comparing a first sensing value sensed by applying the first read signal to the at least one reference cell with a second sensing value sensed by applying a second read signal to a selected memory cell among the multiple memory cells.